Method of manufacturing semiconductor device by forming a film on a substrate

Patent metadata

Field	Value
Publication number	US-9384969-B2
Application number	US-201514679105-A
Country	US
Kind code	B2
Filing date	Apr 6, 2015
Priority date	Nov 26, 2008
Publication date	Jul 5, 2016
Grant date	Jul 5, 2016

Abstract

Provided is a technique including forming a film on a substrate, the film including a first element and a second element different from the first element, by performing a cycle a predetermined number of times. The cycle includes: forming a first layer including the first element by supplying a gas containing the first element to the substrate, wherein the first layer is a discontinuous layer, a continuous layer, or a layer in which at least one of the discontinuous layer or the continuous layer is overlapped; and forming a second layer including the first element and the second element by supplying a gas containing the second element to the substrate to modify the first layer under a condition where a modifying reaction of the first layer by the gas containing the second element is not saturated.

First claim

What is claimed is:

1. A method of manufacturing a semiconductor device, comprising:
forming a film on a substrate, the film including a first element and a second element different from the first element, by performing a cycle a predetermined number of times, the cycle including:
(a) forming a first layer that includes the first element by supplying a first gas that includes the first element to the substrate, wherein the first layer includes at least one of: a discontinuous layer, a continuous layer, or a layer in which at least one of the discontinuous layer or the continuous layer is overlapped, and
(b) forming a second layer that includes the first element and the second element by supplying a second gas that includes the second element to the substrate to modify the first layer under a condition that a modifying reaction of the first layer by the second gas is not saturated.

2. The method of claim 1 , wherein the first layer has a thickness of several atomic layers.

3. The method of claim 1 , wherein the first layer has a thickness of one atomic layer.

4. The method of claim 1 , wherein the first layer has a thickness of less than one atomic layer.

5. The method of claim 1 , wherein the first layer includes a layer in which the first element decomposed from the first gas is deposited.

6. The method of claim 1 , wherein the first layer includes a chemical adsorption layer of a molecule of the first gas.

7. The method of claim 1 , wherein a surface layer of the first layer is modified in (b).

8. The method of claim 1 , wherein only a surface layer of the first layer is modified in (b).

9. The method of claim 1 , wherein a portion of a surface layer of the first layer is modified in (b).

10. The method of claim 1 , wherein only a portion of a surface layer of the first layer is modified in (b).

11. The method of claim 1 , wherein the second gas is plasma-excited or thermally-excited and supplied to the substrate in (b).

12. The method of claim 1 ,
wherein the first element includes at least one of a semiconductor element or a metal element, and
wherein the second element includes at least one of nitrogen, carbon, or oxygen.

13. The method of claim 1 ,
wherein the first element includes at least one of silicon, boron, aluminum, or titanium, and
wherein the second element includes at least one of nitrogen, carbon, or oxygen.

14. A substrate processing method, comprising:
forming a film on a substrate, the film including a first element and a second element different from the first element, by performing a cycle a predetermined number of times, the cycle including:
(a) forming a first layer that includes the first element by supplying a first gas that includes the first element to the substrate, wherein the first layer includes at least one of: a discontinuous layer, a continuous layer, or a layer in which at least one of the discontinuous layer or the continuous layer is overlapped, and
(b) forming a second layer that includes the first element and the second element by supplying a second gas that includes the second element to the substrate to modify the first layer under a condition that a modifying reaction of the first layer by the second gas is not saturated.

Assignees

• Hitachi Int Electric Inc
• Hitachi Int Electric Inc

Inventors

• Takasawa Yushin
• Karasawa Hajime
• Hirose Yoshiro

Classifications

• H10P14/69433

  the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz · CPC title

• H10P14/69391

  the material containing aluminium, e.g. Al2O3 · CPC title

• H10P14/6927

  the material being a silicon oxynitride, e.g. SiON or SiON:H · CPC title

• H10P14/6922

  the material containing Si, O and at least one of H, N, C, F or other non-metal elements, e.g. SiOC, SiOC:H or SiONC · CPC title

• H10P14/6905

  being a silicon carbide or silicon carbonitride and not containing oxygen, e.g. SiC or SiC:H · CPC title