Method of manufacturing semiconductor device for forming film including at least two different elements

Patent metadata

Field	Value
Publication number	US-9443720-B2
Application number	US-201615082167-A
Country	US
Kind code	B2
Filing date	Mar 28, 2016
Priority date	Nov 26, 2008
Publication date	Sep 13, 2016
Grant date	Sep 13, 2016

Abstract

Provided is a technique of forming a film on a substrate by performing a cycle a predetermined number of times. The cycle includes: forming a first layer by supplying a gas containing a first element to the substrate, wherein the first layer is a discontinuous layer, a continuous layer, or a layer in which at least one of the discontinuous layer or the continuous layer is overlapped; forming a second layer including the first layer and a discontinuous layer including a second element stacked on the first layer; and forming a third layer by supplying a gas containing a third element to the substrate to modify the second layer under a condition where a modifying reaction of the second layer by the gas containing the third element is not saturated.

First claim

What is claimed is:

1. A method of manufacturing a semiconductor device, comprising:
forming a film on a substrate, the film including a first element and a second element different from the first element, by performing a cycle a predetermined number of times, the cycle including:
(a) forming a first layer that includes the first element by supplying a first gas that includes the first element to the substrate; and
(b) forming a second layer that includes the first element and the second element by supplying a second gas that includes the second element to the substrate to modify the first layer under a condition that a modifying reaction of the first layer by the second gas is not saturated.

2. The method of claim 1 , wherein the first layer is not entirely modified in (b).

3. The method of claim 1 , wherein a portion of the first layer is modified in (b).

4. The method of claim 1 , wherein a portion of the first layer is modified and the other portion of the first layer is not modified in (b).

5. The method of claim 1 , wherein a state where a portion of the first layer is exposed is maintained in (b).

6. The method of claim 1 , wherein a composition ratio of the film is controlled by the condition in (b).

7. A method of manufacturing a semiconductor device, comprising:
forming a film on a substrate, the film including a first element, a second element different from the first element, and a third element different from the first and the second elements, by performing a cycle a predetermined number of times, the cycle including:
(a) forming a first layer that includes the first element by supplying a first gas that includes the first element to the substrate;
(b) forming a second layer that includes the first element and the second element by supplying a second gas that includes the second element to the substrate to form a layer that includes the second element on the first layer or to modify the first layer; and
(c) forming a third layer that includes the first element, the second element, and the third element by supplying a third gas that includes the third element to the substrate to modify the second layer under a condition that a modifying reaction of the second layer by the third gas is not saturated.

8. The method of claim 7 , wherein the second layer is not entirely modified in (c).

9. The method of claim 7 , wherein a portion of the second layer is modified in (c).

10. The method of claim 7 , wherein a portion of the second layer is modified and the other portion of the second layer is not modified in (c).

11. The method of claim 7 , wherein a state where a portion of the second layer is exposed is maintained in (c).

12. The method of claim 7 , wherein a composition ratio of the film is controlled by the condition in (c).

13. A method of manufacturing a semiconductor device, comprising:
forming a film on a substrate, the film including a first element, a second element different from the first element, a third element different from the second element, and a fourth element different from the first and the third elements, by performing a cycle a predetermined number of times, the cycle including:
(a) forming a first layer that includes the first element by supplying a first gas that includes the first element to the substrate;
(b) forming a second layer that includes the first element and the second element by supplying a second gas that includes the second element to the substrate to form a layer that includes the second element on the first layer or to modify the first layer;
(c) forming a third layer that includes the first element, the second element, and the third element by supplying a third gas that includes the third element to the substrate to form a layer that includes the third element on the second layer or to modify the second layer; and
(d) forming a fourth layer that includes the first element, the second element, the third element, and the fourth element by supplying a fourth gas that includes the fourth element to the substrate to modify the third layer under a condition that a modifying reaction of the third layer by the fourth gas is not saturated.

14. The method of claim 13 , wherein the third layer is not entirely modified in (d).

15. The method of claim 13 , wherein a portion of the third layer is modified in (d).

16. The method of claim 13 , wherein a portion of the third layer is modified and the other portion of the third layer is not modified in (d).

17. The method of claim 13 , wherein a state where a portion of the third layer is exposed is maintained in (d).

18. The method of claim 13 , wherein a composition ratio of the film is controlled by the condition in (d).

Assignees

• Hitachi-Kokusai Electric Inc
• Hitachi Int Electric Inc

Inventors

• Takasawa Yushin
• Karasawa Hajime
• Hirose Yoshiro

Classifications

• H10P14/69433

  the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz · CPC title

• H10P14/69391

  the material containing aluminium, e.g. Al2O3 · CPC title

• H10P14/6927

  the material being a silicon oxynitride, e.g. SiON or SiON:H · CPC title

• H10P14/6922

  the material containing Si, O and at least one of H, N, C, F or other non-metal elements, e.g. SiOC, SiOC:H or SiONC · CPC title

• H10P14/6905

  being a silicon carbide or silicon carbonitride and not containing oxygen, e.g. SiC or SiC:H · CPC title