Vertical non-volatile memory device having channel-accomodating opening formed of etch stop region in lower stack layers
US-10396086-B2 · Aug 27, 2019 · US
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Son Young Hwan patents
Son Young Hwan holds 3 patents in our database, with recent filings and technology areas summarized below.
| Metric | Value |
|---|---|
| Total patents | 3 |
| Recent patents | 0 |
| First publication | Feb 6, 2018 |
| Latest publication | Aug 27, 2019 |
Filing trend
Year-over-year patent counts for this assignee.
Recent patents
Latest publications where this party is an assignee.
Integrated circuit device including vertical memory device and method of manufacturing the same
US-9991271-B2 · Jun 5, 2018 · US
Vertical memory device
US-9887208-B2 · Feb 6, 2018 · US
Notable patents
Representative or frequently cited publications from precomputed assignee stats.
Vertical non-volatile memory device having channel-accomodating opening formed of etch stop region in lower stack layers
US-10396086-B2 · Aug 27, 2019 · US
Integrated circuit device including vertical memory device and method of manufacturing the same
US-9991271-B2 · Jun 5, 2018 · US
Vertical memory device
US-9887208-B2 · Feb 6, 2018 · US
Top CPC classifications
Most common classification codes in this portfolio.
| CPC | Patents |
|---|---|
| H01L27/11582 | 3 |
| H01L27/1157 | 3 |
| H10B43/50 | 3 |
| H10B41/27 | 3 |
| H10B43/27 | 3 |
Technology areas
Mapped technology topics for this assignee.
| Technology | Patents |
|---|---|
| Electricity | 3 |
| Physics | 1 |