Method for manufacturing N-type SiC single crystal by solution growth using a mixed gas atmosphere
US-9512540-B2 · Dec 6, 2016 · US
Moriguchi Kouji was listed as an assignee on 1 patent publication in 2016.
| Metric | Value |
|---|---|
| Company | Moriguchi Kouji |
| Year | 2016 |
| Patents | 1 |
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