Methods for producing silicon ingots by horizontal magnetic field czochralski
US-2022349087-A1 · Nov 3, 2022 · US
characterised by the seed, e.g. its crystallographic orientation
characterised by the seed, e.g. its crystallographic orientation · Cooperative Patent Classification (CPC)
Chemical and metallurgical processes, compounds, and materials.
Related technology areas
Mapped technology topics for this CPC code.
| Metric | Value |
|---|---|
| CPC code | C30B15/36 |
| Official title | characterised by the seed, e.g. its crystallographic orientation |
| Display label | characterised by the seed, e.g. its crystallographic orientation |
| Total patents | 80 |
Filing trend
Year-over-year patent counts classified under this CPC code.
Filing activity over the last five years is rapidly declining.
| Year | Patents |
|---|---|
| 2015 | 6 |
| 2016 | 7 |
| 2017 | 5 |
| 2018 | 8 |
| 2019 | 6 |
| 2020 | 13 |
| 2021 | 8 |
| 2022 | 8 |
| 2023 | 7 |
| 2024 | 9 |
| 2025 | 2 |
| 2026 | 1 |
Representative patents
Representative publications under this CPC code from precomputed stats, or recent filings when stats are unavailable.
Method and apparatus for growing silicon single crystal ingot
US-2022251724-A1 · Aug 11, 2022 · US
Methods for growing a single crystal silicon ingot using continuous Czochralski method
US-11408090-B2 · Aug 9, 2022 · US
Piezoelectric single crystal m3re(po4)3 and the preparation method and application thereof
US-2022228294-A1 · Jul 21, 2022 · US
Method for producing group III nitride crystal and seed substrate
US-11377757-B2 · Jul 5, 2022 · US
Polycrystalline Silicon Material
US-2022204349-A1 · Jun 30, 2022 · US
Methods for preparing an ingot in an ingot puller apparatus and methods for selecting a side heater length for such apparatus
US-2022145490-A1 · May 12, 2022 · US
Silicon-based molten composition and method for manufacturing silicon carbide single crystal using the same
US-11193217-B2 · Dec 7, 2021 · US
Silicon single crystal growth method and apparatus
US-2021372002-A1 · Dec 2, 2021 · US
Method for producing si ingot single crystal, si ingot single crystal, and apparatus thereof
US-2021363656-A1 · Nov 25, 2021 · US
Method for preparing single crystal superalloy test bars by using ni-w heterogeneous seed crystal
US-2021277500-A1 · Sep 9, 2021 · US
Apparatus for producing an ingot comprising a crucible body with a lid assembly having a movable core member and method for producing silicon carbide ingot using the apparatus
US-11078599-B2 · Aug 3, 2021 · US
Pulling control device for single crystal ingot growth and pulling control method applied thereto
US-10968534-B2 · Apr 6, 2021 · US
Polycrystalline silicon rod and method for producing single crystal silicon
US-10914021-B2 · Feb 9, 2021 · US
Method for pulling a single crystal by the FZ method comprising dynamically adapting the power of a melting apparatus based on a position of lower and upper phase boundaries
US-10907271-B2 · Feb 2, 2021 · US
Method of producing apatite crystal, and apatite crystal
US-10851472-B2 · Dec 1, 2020 · US
Method for producing silicon carbide single crystal
US-2020347511-A1 · Nov 5, 2020 · US
Methods for growing a single crystal silicon ingot using continuous czochralski method
US-2020332439-A1 · Oct 22, 2020 · US
Method of manufacturing semiconductor material from mayenite
US-10766784-B2 · Sep 8, 2020 · US
Method for producing group iii nitride crystal and seed substrate
US-2020263320-A1 · Aug 20, 2020 · US
Frequently asked questions
Answers are generated from the same data shown on this page.
- What is CPC C30B15/36?
- CPC C30B15/36 is the Cooperative Patent Classification code for “characterised by the seed, e.g. its crystallographic orientation.”
- How many patents are filed under CPC C30B15/36 (characterised by the seed, e.g. its crystallographic orientation)?
- Our database includes 80 publications tagged with this CPC code.
- Is patent activity under CPC C30B15/36 growing?
- Publication counts under this code: 9 in 2024 vs 2 in 2025 (latest complete years).