Nitride-based transistors with a protective layer and a low-damage recess
US-11316028-B2 · Apr 26, 2022 · US
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Sheppard Scott T patents
Sheppard Scott T holds 3 patents in our database, with recent filings and technology areas summarized below.
| Metric | Value |
|---|---|
| Total patents | 3 |
| Recent patents | 0 |
| First publication | Apr 19, 2016 |
| Latest publication | Apr 26, 2022 |
Filing trend
Year-over-year patent counts for this assignee.
Recent patents
Latest publications where this party is an assignee.
Methods of forming group III-nitride semiconductor devices including implanting ions directly into source and drain regions and annealing to activate the implanted ions
US-9711633-B2 · Jul 18, 2017 · US
Semiconductor devices including implanted regions and protective layers
US-9318594-B2 · Apr 19, 2016 · US
Notable patents
Representative or frequently cited publications from precomputed assignee stats.
Nitride-based transistors with a protective layer and a low-damage recess
US-11316028-B2 · Apr 26, 2022 · US
Methods of forming group III-nitride semiconductor devices including implanting ions directly into source and drain regions and annealing to activate the implanted ions
US-9711633-B2 · Jul 18, 2017 · US
Semiconductor devices including implanted regions and protective layers
US-9318594-B2 · Apr 19, 2016 · US
Technology areas
Mapped technology topics for this assignee.
| Technology | Patents |
|---|---|
| Electricity | 3 |