Memory element and memory device with ion source layer and resistance change layer
US-9202560-B2 · Dec 1, 2015 · US
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Mizuguchi Tetsuya patents in 2015
Mizuguchi Tetsuya was listed as an assignee on 4 patent publications in 2015.
| Metric | Value |
|---|---|
| Company | Mizuguchi Tetsuya |
| Year | 2015 |
| Patents | 4 |
Patents
Representative publications for Mizuguchi Tetsuya in 2015.
Memory element with ion conductor layer in which metal ions diffuse and memory device incorporating same
US-9136470-B2 · Sep 15, 2015 · US
Memory element and method of manufacturing the same, and memory device
US-9112149-B2 · Aug 18, 2015 · US
Memory element having ion source layers with different contents of a chalcogen element
US-9058873-B2 · Jun 16, 2015 · US
Top CPC classifications
Most common classification codes for Mizuguchi Tetsuya in 2015.
| CPC | Patents |
|---|---|
| H10N70/245 | 4 |
| H10N70/826 | 4 |
| H10N70/8416 | 4 |
| H01L27/2436 | 3 |
| H01L27/2472 | 3 |
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