Seed material for liquid phase epitaxial growth of monocrystalline silicon carbide, and method for liquid phase epitaxial growth of monocrystalline silicon carbide
US-10358741-B2 · Jul 23, 2019 · US
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Torimi Satoshi — Electricity
Torimi Satoshi holds 3 patents in Electricity, with representative filings summarized below.
| Metric | Value |
|---|---|
| Company | Torimi Satoshi |
| Technology | Electricity |
| Patents in slice | 3 |
| Recent patents in slice | 0 |
| First year | 2016 |
| Last year | 2019 |
Representative patents
Notable publications linking Torimi Satoshi to Electricity.
Method for epitaxial growth of monocrystalline silicon carbide using a feed material including a surface layer containing a polycrystalline silicon carbide with a 3C crystal polymorph
US-9725822-B2 · Aug 8, 2017 · US
Unit for liquid phase epitaxial growth of monocrystalline silicon carbide, and method for liquid phase epitaxial growth of monocrystalline silicon carbide
US-9252206-B2 · Feb 2, 2016 · US
Unit for liquid phase epitaxial growth of monocrystalline silicon carbide, and method for liquid phase epitaxial growth of monocrystalline silicon carbide
US-9252206-B2 · Feb 2, 2016 · US
Unit for liquid phase epitaxial growth of monocrystalline silicon carbide, and method for liquid phase epitaxial growth of monocrystalline silicon carbide
US-9252206-B2 · Feb 2, 2016 · US
Recent filings
Latest patents from Torimi Satoshi in Electricity.
Seed material for liquid phase epitaxial growth of monocrystalline silicon carbide, and method for liquid phase epitaxial growth of monocrystalline silicon carbide
US-10358741-B2 · Jul 23, 2019 · US
Method for epitaxial growth of monocrystalline silicon carbide using a feed material including a surface layer containing a polycrystalline silicon carbide with a 3C crystal polymorph
US-9725822-B2 · Aug 8, 2017 · US
Unit for liquid phase epitaxial growth of monocrystalline silicon carbide, and method for liquid phase epitaxial growth of monocrystalline silicon carbide
US-9252206-B2 · Feb 2, 2016 · US
Unit for liquid phase epitaxial growth of monocrystalline silicon carbide, and method for liquid phase epitaxial growth of monocrystalline silicon carbide
US-9252206-B2 · Feb 2, 2016 · US
Unit for liquid phase epitaxial growth of monocrystalline silicon carbide, and method for liquid phase epitaxial growth of monocrystalline silicon carbide
US-9252206-B2 · Feb 2, 2016 · US
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