Element that oscillates or detects terahertz waves

Patent metadata

Field	Value
Publication number	US-9998074-B2
Application number	US-201515121703-A
Country	US
Kind code	B2
Filing date	Feb 24, 2015
Priority date	Feb 28, 2014
Publication date	Jun 12, 2018
Grant date	Jun 12, 2018

Abstract

An element which oscillates or detects terahertz waves includes a resonance unit including a differential negative resistance element, a first conductor, a second conductor, and a dielectric body, a bias circuit configured to supply a bias voltage to the differential negative resistance element, and a line configured to connect the resonance unit and the bias circuit to each other. The differential negative resistance element and the dielectric body are disposed between the first and second conductors. The line is a low impedance line in a frequency f LC of resonance caused by inductance of the line and capacitance of the resonance unit using an absolute value of a differential negative resistance of the differential negative resistance element as a reference.

First claim

The invention claimed is:

1. An element which oscillates or detects terahertz waves, the element comprising:
a resonance unit including a differential negative resistance element, a first conductor, a second conductor, and a first dielectric body;
a bias circuit configured to supply a bias voltage to the differential negative resistance element, the bias circuit including a resistance and capacitance, each of the resistance and the capacitance being electrically connected in parallel with the differential negative resistance element; and
a line configured to electrically connect the resonance unit and the bias circuit to each other,
wherein the differential negative resistance element and the first dielectric body are disposed between the first and second conductors,
the line includes a third conductor, a fourth conductor, a second dielectric body disposed between the third and fourth conductors, and a fifth conductor which electrically connects the first and third conductors to each other,
a thickness of the second dielectric body is smaller than a thickness of the first dielectric body, and
a width of the third conductor is smaller than a width of the first conductor.

2. The element according to claim 1 , wherein
a real part of an impedance of the line in a frequency of resonance caused by inductance of the line and capacitance of the resonance unit is equal to or smaller than a value ten times as large as the absolute value of the differential negative resistance of the differential negative resistance element using the differential negative resistance of the differential negative resistance element as a reference.

3. The element according to claim 2 , wherein
the real part of the impedance of the line in the frequency is equal to or smaller than the absolute value of the differential negative resistance of the differential negative resistance element using the differential negative resistance of the differential negative resistance element as a reference.

4. The element according to claim 1 , wherein
dielectric loss of the line in a frequency of resonance caused by inductance of the line and capacitance of the resonance unit is equal to or larger than one-tenth of an absolute value of an inverse number of the differential negative resistance of the differential negative resistance element.

5. The element according to claim 4 , wherein
the dielectric loss of the line in the frequency is equal to or larger than an absolute value of an inverse number of the differential negative resistance of the differential negative resistance element.

6. The element according to claim 1 , wherein
a characteristic impedance of the line in a frequency of resonance caused by inductance of the line and capacitance of the resonance unit is equal to or smaller than a value ten times as large as the absolute value of the differential negative resistance of the differential negative resistance element.

7. The element according to claim 6 , wherein
the characteristic impedance of the line in the frequency is equal to or smaller than the absolute value of the differential negative resistance of the differential negative resistance element.

8. The element according to claim 1 which satisfies, when “Re[Y RTD ]” denotes a real part of admittance of the differential negative resistance element and “Re[Y ANT ]” denotes a real part of admittance of a resonator including the first and second conductors and the first dielectric body,
an expression “Re[Y RTD ]+Re[Y ANT ]≤0” in a resonance frequency of the oscillated or detected terahertz waves, and
an expression “Re[Y RTD ]+Re[Y ANT ]>0” in the frequency of resonance caused by the inductance of the line and the capacitance of the resonance unit.

9. An element which oscillates or detects terahertz waves, the element comprising:
a resonance unit including a differential negative resistance element, a first conductor, a second conductor, and a first dielectric body;
a bias circuit configured to supply a bias voltage to the differential negative resistance element, the bias circuit including a resistance and capacitance, each of the resistance and the capacitance being electrically connected in parallel with the differential negative resistance element; and
a line configured to electrically connect the resonance unit and the bias circuit to each other,
wherein the differential negative resistance element and the first dielectric body are disposed between the first and second conductors,
the line includes a third conductor, a fourth conductor, a second dielectric body disposed between the third and fourth conductors, and a fifth conductor which electrically connects the first and third conductors to each other,
a thickness of the second dielectric body is smaller than a thickness of the first dielectric body, and
the thickness of the second dielectric body is equal to or larger than 0.001 μm and equal to or smaller than 1μm.

10. An element which oscillates or detects terahertz waves, the element comprising:
a resonance unit including a differential negative resistance element, a first conductor, a second conductor, and a first dielectric body;
a bias circuit configured to supply a bias voltage to the differential negative resistance element, the bias circuit including a resistance and capacitance, each of the resistance and the capacitance being electrically connected in parallel with the differential negative resistance element; and
a line configured to electrically connect the resonance unit and the bias circuit to each other,
wherein the differential negative resistance element and the first dielectric body are disposed between the first and second conductors,
the line includes a third conductor, a fourth conductor, a second dielectric body disposed between the third and fourth conductors, and a fifth conductor which electrically connects the first and third conductors to each other,
a thickness of the second dielectric body is smaller than a thickness of the first dielectric body, and
the line is a low impedance line in a frequency of resonance caused by inductance of the line and capacitance of the resonance unit using an absolute value of a differential negative resistance of the differential negative resistance element as a reference.

11. The element according to claim 1 , wherein, when “d 1 ” denotes a length of the line and “d 2 ” denotes a length from the differential negative resistance element to the resistance,
a frequency of resonance caused by inductance of the line and capacitance of the resonance unit is included in a frequency band corresponding to a wavelength band of 4×d 1 or more and 4×d 2 or less.

12. The element according to claim 1 , wherein the fifth conductor physically connects to the first and third conductors.

13. The element according to claim 12 , wherein a width of the fifth conductor is smaller than a width of the first conductor.

14. The element according to claim 13 , wherein the width of the fifth conductor is equal to or smaller than one-tenth of a wavelength of the terahertz waves.

15. The element according to claim 1 , wherein the width of the third conductor is equal to or smaller than one-tenth of a wavelength of the terahertz waves.

Assignees

• Canon Kk

Inventors

• Koyama Yasushi

Classifications

• H03H7/0123

  comprising distributed impedance elements together with lumped impedance elements · CPC title

• H03H11/52

  simulating negative resistances · CPC title

• H03B9/12

  using solid state devices, e.g. Gunn-effect devices · CPC title

• H03B7/08 Primary

  being a tunnel diode · CPC title

• H03B2009/123

  using Gunn diodes · CPC title