Terahertz device module

Patent metadata

Field	Value
Publication number	US-10066984-B2
Application number	US-201715808051-A
Country	US
Kind code	B2
Filing date	Nov 9, 2017
Priority date	May 12, 2015
Publication date	Sep 4, 2018
Grant date	Sep 4, 2018

Abstract

The THz device module includes: a substrate; a THz device disposed on a front side surface of the substrate, and configured to oscillate or detect THz waves; a cap covering the THz device being separated from the THz device, and comprising an opening formed at a position opposite to the THz device in a vertical direction of the front side surface of the substrate; and a sealing member covering the opening of the cap so as to seal the THz device in conjunction with the substrate and the cap. A distance from the THz device to the sealing member is within a near-field pattern to which an electric field of the THz waves can be reached without interruption from a surface of the THz device to the sealing member. The THz device module efficiently emits or detects THz waves from the opening, thereby suppressing upsizing of the cap.

First claim

What is claimed is:

1. A terahertz device module comprising:
a substrate;
a terahertz device disposed on a front side surface of the substrate, the terahertz device configured to oscillate or detect terahertz waves;
a cap configured to cover the terahertz device so as to be separated from the terahertz device, the cap comprising an opening formed at a position opposite to the terahertz device in a vertical direction of the front side surface of the substrate; and
a sealing member configured to cover the opening of the cap so as to seal the terahertz device in conjunction with the substrate and the cap, wherein
a distance from the terahertz device to the sealing member is within a near-field pattern to which an electric field of the terahertz waves can be reached without interruption from a surface of the terahertz device to the sealing member.

2. The terahertz device module according to claim 1 , wherein
a width of the opening is formed so as to be equal to 1 wavelength of the terahertz waves.

3. The terahertz device module according to claim 1 , wherein
the distance from the terahertz device to the sealing member is shorter than a half wavelength of the terahertz waves.

4. The terahertz device module according to claim 1 , wherein
a diameter of the opening is within a range of 0.1 time to several times as long as a wavelength of the terahertz waves emitted or detected from the opening.

5. The terahertz device module according to claim 1 , further comprising:
a submount disposed on the substrate, the submount configured to mount the terahertz device, wherein
a height of the submount is within a range of 0.2 time to 1.5 times as long as a wavelength of the terahertz waves emitted or detected from the opening.

6. The terahertz device module according to claim 1 , wherein
the sealing member comprises a substrate selected from the group of consisting of a glass substrate and a silicon substrate.

7. The terahertz device module according to claim 1 , wherein
the electric field resonates in a plane of the cap including the opening.

8. The terahertz device module according to claim 1 , wherein
the terahertz device has a surface light-emission radiating pattern or a surface light-receiving pattern.

9. The terahertz device module according to claim 1 , wherein the terahertz device comprises:
a semiconductor substrate;
a first semiconductor layer disposed on the semiconductor substrate;
an active element formed by being laminated on the first semiconductor layer;
a second electrode connected to the first semiconductor layer so as to be connected to one side of a main electrode of the active element, the second electrode disposed on the semiconductor substrate; and
a first electrode connected to another side of the main electrode of the active element, the first electrode disposed on the semiconductor substrate so as to be opposite to the second electrode, wherein
the active element forms a resonator between the second electrode and the first electrode, wherein
electromagnetic waves are reflected on the substrate, and the electromagnetic waves have a surface light-emission radiating pattern or surface light-receiving pattern in a vertical direction with respect to the semiconductor substrate.

10. The terahertz device module according to claim 9 , wherein
the first electrode and the second electrode comprise a dipole antenna.

11. The terahertz device module according to claim 10 , further comprising:
a first feed electrode line and a second feed electrode line each which is connected to the dipole antenna; and
a first pad electrode and a second pad electrode respectively connected to the first feed electrode line and the second feed electrode line.

12. The terahertz device module according to claim 11 , further comprising
an MIM reflector connected between the first pad electrode and the second pad electrode.

13. The terahertz device module according to claim 9 , further comprising
a resistance element connected between the first electrode and the second electrode.

14. The terahertz device module according to claim 13 , wherein
the resistance element comprises metallic wiring.

15. The terahertz device module according to claim 14 , wherein
the metallic wiring comprises one selected from the group consisting of Bi, Ni, Ti, and Pt.

16. The terahertz device module according to claim 9 , wherein
the active element is arranged as multichip implementation.

17. The terahertz device module according to claim 16 , wherein
the active element is arranged as cell array implementation.

18. The terahertz device module according to claim 9 , wherein
the active element comprises one selected from the group consisting of a resonant tunneling diode, a TUNNETT diode, an IMPATT diode, a GaAs based field-effect transistor, a GaN based FET, a high electron mobility transistor, a hetero-junction bipolar transistor, and CMOSFET.

Assignees

• Rohm Co Ltd

Inventors

• Mukai Toshikazu
• Kim Jae-Young
• Tsuruda Kazuisao

Classifications

• G01J1/06

  Restricting the angle of incident light · CPC title

• G01J1/0271 Primary

  Housings; Attachments or accessories for photometers · CPC title

• H03B2200/0084

  dedicated to Terahertz frequencies · CPC title

• G01J1/0209

  Monolithic · CPC title

• G01J5/045

  Sealings; Vacuum enclosures; Encapsulated packages; Wafer bonding structures; Getter arrangements (getter arrangements per se H10W76/48, H10P36/03) · CPC title