Hybrid junction field-effect transistor and active matrix structure

Patent metadata

Field	Value
Publication number	US-9166181-B2
Application number	US-201414184488-A
Country	US
Kind code	B2
Filing date	Feb 19, 2014
Priority date	Feb 19, 2014
Publication date	Oct 20, 2015
Grant date	Oct 20, 2015

Abstract

Junction field-effect transistors including inorganic channels and organic gate junctions are used in some applications for forming high resolution active matrix displays. Arrays of such junction field-effect transistors are electrically connected to thin film switching transistors and provide high drive currents for passive devices such as organic light emitting diodes.

First claim

What is claimed is:

1. A junction field-effect transistor comprising:
a doped inorganic semiconductor layer;
a gate electrode;
first and second ohmic contacts operatively associated with the inorganic semiconductor layer, and
a gate junction structure operatively associated with the gate electrode, the gate junction structure being positioned between the gate electrode and the inorganic semiconductor layer and including an organic semiconductor blocking layer for suppressing…

Assignees

• IBM

Inventors

• Afzali-Ardakani Ali
• Chen Tze-Chiang
• Hekmatshoartabari Bahman
• Shahidi Ghavam G

Classifications

• H10K59/12

  Electricity · mapped topic

• H10K10/46

  Electricity · mapped topic

• H10D86/421 Primary

  Electricity · mapped topic

• H10D86/471

  Electricity · mapped topic

• H10D86/60

  Electricity · mapped topic