Semiconductor device

Patent metadata

Field	Value
Publication number	US-9997637-B2
Application number	US-201615226051-A
Country	US
Kind code	B2
Filing date	Aug 2, 2016
Priority date	Feb 7, 2014
Publication date	Jun 12, 2018
Grant date	Jun 12, 2018

Abstract

The semiconductor device includes a first transistor provided in a driver circuit portion and a second transistor provided in a pixel portion; the first transistor and the second transistor have different structures. In an oxide semiconductor film of each of the transistors, an impurity element is contained in regions which do not overlap with a gate electrode. The regions of the oxide semiconductor film which contain the impurity element function as low-resistance regions. Furthermore, the regions of the oxide semiconductor film which contain the impurity element are in contact with a film containing hydrogen. Furthermore, the first transistor provided in the driver circuit portion may include the oxide semiconductor film in which a first film and a second film are stacked, and the second transistor provided in the pixel portion may include the oxide semiconductor film which differs from the first film in the atomic ratio of metal elements.

First claim

What is claimed is:

1. A semiconductor device comprising:
a first transistor and a second transistor each over a first insulating film;
the first transistor comprising:
a first oxide semiconductor film;
second oxide semiconductor film on and in contact with a top surface of the first oxide semiconductor film;
a first gate insulating film on and in contact with the second oxide semiconductor film; and
a first gate electrode over the first gate insulating film; and

the second transistor comprising:
a third oxide semiconductor film;
a second gate insulating film on and in contact with the third oxide semiconductor film; and
a second gate electrode over the second gate insulating film,

wherein each of the first oxide semiconductor film, the second oxide semiconductor film, and the third oxide semiconductor film comprises indium, gallium, and zinc, and
wherein, in each of the second oxide semiconductor film and the third oxide semiconductor film, a proportion of indium atoms is lower than or equal to a proportion of gallium atoms.

2. The semiconductor device according to claim 1 , wherein the first transistor comprises a source electrode and a drain electrode each on and in contact with the second oxide semiconductor film.

3. The semiconductor device according to claim 1 , comprising a second insulating film over the first gate electrode and the second gate electrode,
wherein the first transistor comprises a first source electrode and a first drain electrode each over the second insulating film, and
wherein the second transistor comprises a second source electrode and a second drain electrode each over the second insulating film.

4. The semiconductor device according to claim 1 , comprising a second insulating film over the first gate electrode and the second gate electrode and in contact with the second oxide semiconductor film and the third oxide semiconductor film, wherein the second insulating film is a nitride insulating film.

5. The semiconductor device according to claim 1 , wherein the second oxide semiconductor film covers the first oxide semiconductor film.

6. The semiconductor device according to claim 1 , wherein, in the first oxide semiconductor film, a proportion of indium atoms is higher than a proportion of gallium atoms.

7. A display device comprising the semiconductor device according to claim 1 ,
wherein the display device comprises:
a driver circuit portion comprising the first transistor; and
a pixel portion comprising:
the second transistor; and
a display element electrically connected to the second transistor.

8. The display device according to claim 7 , wherein the display element is a liquid crystal element.

9. The display device according to claim 7 , wherein the display element is an electroluminescent element.

10. A semiconductor device comprising:
a first transistor and a second transistor each over a first insulating film;
the first transistor comprising:
a first gate electrode over the first insulating film;
a first gate insulating film over the first gate electrode;
a first oxide semiconductor film over the first gate insulating film;
a second oxide semiconductor film on and in contact with a top surface of the first oxide semiconductor film;
a second gate insulating film on and in contact with the second oxide semiconductor film; and
a second gate electrode over the second gate insulating film; and

the second transistor comprising:
a third oxide semiconductor film over the first gate insulating film;
a third gate insulating film on and in contact with the third oxide semiconductor film; and
a third gate electrode over the third gate insulating film,

wherein each of the first oxide semiconductor film, the second oxide semiconductor film, and the third oxide semiconductor film comprises indium, gallium, and zinc, and
wherein, in each of the second oxide semiconductor film and the third oxide semiconductor film, a proportion of indium atoms is lower than or equal to a proportion of gallium atoms.

11. The semiconductor device according to claim 10 , wherein the first transistor comprises a source electrode and a drain electrode each on and in contact with the second oxide semiconductor film.

12. The semiconductor device according to claim 10 , comprising a second insulating film over the second gate electrode and the third gate electrode,
wherein the first transistor comprises a first source electrode and a first drain electrode each over the second insulating film, and
wherein the second transistor comprises a second source electrode and a second drain electrode each over the second insulating film.

13. The semiconductor device according to claim 10 , comprising a second insulating film over the second gate electrode and the third gate electrode and in contact with the second oxide semiconductor film and the third oxide semiconductor film, wherein the second insulating film is a nitride insulating film.

14. The semiconductor device according to claim 10 , wherein the first gate insulating film is a nitride insulating film.

15. The semiconductor device according to claim 10 , wherein the second oxide semiconductor film covers the first oxide semiconductor film.

16. The semiconductor device according to claim 10 , wherein, in the first oxide semiconductor film, a proportion of indium atoms is higher than a proportion of gallium atoms.

17. A display device comprising the semiconductor device according to claim 1 ,
wherein the display device comprises:
a driver circuit portion comprising the first transistor; and
a pixel portion comprising:
the second transistor; and
a display element electrically connected to the second transistor.

18. The display device according to claim 17 , wherein the display element is a liquid crystal element.

19. The display device according to claim 17 , wherein the display element is an electroluminescent element.

20. A semiconductor device comprising:
a first transistor and a second transistor each over a first insulating film;
the first transistor comprising:
a first oxide semiconductor film;
a second oxide semiconductor film on and in contact with a top surface of the first oxide semiconductor film;
a first gate insulating film on and in contact with the second oxide semiconductor film; and
a first gate electrode over the first gate insulating film; and

the second transistor comprising:
a third oxide semiconductor film;
a second gate insulating film on and in contact with the third oxide semiconductor film; and
a second gate electrode over the second gate insulating film,

wherein each of the first oxide semiconductor film, the second oxide semiconductor film, and the third oxide semiconductor film comprises indium, gallium, and zinc, and
wherein each of the first oxide semiconductor film, the second oxide semiconductor film, and the third oxide semiconductor film comprises a non-single-crystal oxide semiconductor, the non-single-crystal oxide semiconductor being a c-axis aligned crystalline oxide semiconductor or a nanocrystalline oxide semiconductor,
wherein, in each of the second oxide semiconductor film and the third oxide semiconductor film, a proportion of indium atoms is lower than or equal to a proportion of gallium atoms.

21. The semiconductor device according to claim 20 , wherein, in the first oxide semiconductor film, a proportion of indium atoms is higher than a proportion of gallium atoms.

22. A display device comprising

Assignees

• Semiconductor Energy Lab

Inventors

• Koezuka Junichi
• Jintyou Masami
• Shima Yukinori
• Kurosaki Daisuke
• Nakada Masataka
• Yamazaki Shunpei

Classifications

• H10D30/6757

  characterised by the structure of the channel, e.g. transverse or longitudinal shape or doping profile (TFTs having channel structures for preventing kink or snapback effects H10D30/6708; TFTs having lightly-doped source or drain extensions H10D30/6715) · CPC title

• H01L29/78606

  Electricity · mapped topic

• H01L29/78696

  Electricity · mapped topic

• H01L27/1251

  Electricity · mapped topic

• H01L29/78693 Primary

  Electricity · mapped topic