Heat dissipation structure of semiconductor device

Patent metadata

Field	Value
Publication number	US-9997430-B2
Application number	US-201715410781-A
Country	US
Kind code	B2
Filing date	Jan 20, 2017
Priority date	Apr 15, 2016
Publication date	Jun 12, 2018
Grant date	Jun 12, 2018

Abstract

A heat dissipation structure of a semiconductor device with excellent heat dissipation applicable to surface-mount thin semiconductor devices is provided, and preferably a heat dissipation structure of a semiconductor device also with excellent insulating reliability is provided. In a heat dissipation structure 101 of a semiconductor device 10 , the semiconductor device 10 has an electric bonding surface 11 a electrically connected with a substrate 20 and a heat dissipation surface 11 b on an opposite side thereof, wherein the heat dissipation surface 11 b is bonded or contacted to a heat spreader 31 via a non-insulated member 32 , and the heat spreader 31 is bonded or contacted to a heat sink 30 via an insulated member 41.

First claim

What is claimed is:

1. A heat dissipation structure of a semiconductor device, the semiconductor device having an electric bonding surface electrically connected with a substrate and a heat dissipation surface on an opposite side thereof, wherein
the heat dissipation surface is bonded or contacted to a conductive member with high thermal conductivity via a non-insulated member,
the conductive member with high thermal conductivity is bonded or contacted to a heat dissipation part via a first insulated member, and
the thickness of the conductive member with high thermal conductivity is greater than that of the semiconductor device,
the conductive member with high thermal conductivity, in a top view, is less than the heat dissipation part, and
in a situation where the semiconductor device and the conductive member with high thermal conductivity are both set as a substantially rectangular shape in a top view, length of each side of the conductive member with high thermal conductivity is greater than the sum of twice the thickness of the conductive member with high thermal conductivity and length of each side of the semiconductor device.

2. The heat dissipation structure of a semiconductor device according to claim 1 , wherein
the first insulated member, in a top view, is greater than the conductive member with high thermal conductivity.

3. The heat dissipation structure of a semiconductor device according to claim 1 , wherein
a second insulated member is configured between the substrate and the conductive member with high thermal conductivity in a manner of covering the periphery of the semiconductor device and at least one part of a pattern of the substrate.

4. The heat dissipation structure of a semiconductor device according to claim 3 , wherein
the second insulated member is configured in a manner of occupying a space between the substrate and the heat dissipation part.

5. The heat dissipation structure of a semiconductor device according to claim 4 , wherein
the second insulated member has a through-hole for fixing to the heat dissipation part.

6. The heat dissipation structure of a semiconductor device according to claim 3 , wherein
the second insulated member is configured through an insulation heat-resistant resin formed or cut processed product, an insulation heat-resistant tape, an insulation heat-resistant sealing element, or a combination of any two or more thereof.

Assignees

• Omron Tateisi Electronics Co

Inventors

• Omura Eiichi

Classifications

• H10W40/77

  Auxiliary members characterised by their shape · CPC title

• H10W40/226 Primary

  characterised by projecting parts, e.g. fins to increase surface area (leadframes for cooling H10W70/461) · CPC title

• H10W40/228 Primary

  the projecting parts being wire-shaped or pin-shaped · CPC title

• H10W40/22 Primary

  characterised by their shape, e.g. having conical or cylindrical projections · CPC title

• H10W90/734

  between a chip and a stacked insulating package substrate, interposer or RDL · CPC title