Method for depositing a piezoelectric film containing AIN, and a piezoelectric film containing AIN

Patent metadata

Field	Value
Publication number	US-9994950-B2
Application number	US-201414901817-A
Country	US
Kind code	B2
Filing date	Jun 24, 2014
Priority date	Jul 16, 2013
Publication date	Jun 12, 2018
Grant date	Jun 12, 2018

Abstract

A method for depositing a piezoelectric film may be provided containing AlN on a substrate by means of magnetron sputtering of at least two targets—of which at least one target contains aluminum—within a vacuum chamber, into which a mixture of gases containing at least reactive nitrogen gas and an inert gas is introduced, and during which magnetron sputtering the unipolar pulse mode and the bipolar pulse mode are alternately used. A film may be provided containing AlN of formula Al X N Y O Z , where (0.1≤X≤1.2); (0.1≤Y≤1.2) and (0.001≤Z≤0.1).

First claim

The invention claimed is:

1. A method comprising depositing a piezoelectric film comprising AlN on a substrate by means of magnetron sputtering of at least two targets, of which at least one target comprises aluminum, within a vacuum chamber, wherein a gas mixture comprising at least reactive nitrogen gas and an inert gas is introduced into the vacuum chamber, wherein a unipolar pulse mode and a bipolar pulse mode are alternately used during magnetron sputtering.

2. The method according to claim 1 , wherein the percentage of the phases of the unipolar pulse mode and the percentage of the phases of the bipolar pulse mode are modified during the deposition of the piezoelectric film comprising AlN.

3. The method according to claim 1 , wherein a gas comprising at least one of the elements argon, krypton, or xenon is used as the inert gas.

4. The method according to claim 1 , wherein a reactive gas oxygen is additionally introduced into the vacuum chamber, wherein the amount of introduced oxygen is a maximum of 5% of the amount of the introduced nitrogen.

5. The method according to claim 1 , wherein at least one target that comprises scandium is used.

6. The method according to claim 5 , wherein a scandium target and an aluminum target are sputtered by means of co-sputtering.

7. The method according to claim 1 , wherein a change between the unipolar pulse mode and the bipolar pulse mode is carried out at a frequency in a range of 50 Hz to 10 kHz.

8. The method according to claim 1 , wherein a pressure in the vacuum chamber is changed during the deposition of the piezoelectric film comprising AlN.

9. The method according to claim 1 , wherein the piezoelectric film comprising AlN has a piezoelectric charge constant d 33 , wherein the film comprising AlN further comprises the element oxygen, so that the piezoelectric film comprising AlN corresponds to the formula Al X N Y O Z , wherein (0.1≤X≤1.2); (0.1≤Y≤1.2) and (0.001≤Z≤0.1).

10. The method according to claim 9 , wherein said film further comprises the element scandium according to the formula Al X Sc U N Y O Z , wherein (0.1≤X≤1.2); (0.1≤U≤1.2); (0.1≤Y≤1.2) and (0.001≤Z≤0.1).

Assignees

• Fraunhofer Ges Forschung
• Univ Dresden Tech

Inventors

• Bartzsch Hagen
• Glöss Daniel
• Frach Peter
• Barth Stephan

Classifications

• C23C14/3464

  using more than one target (C23C14/56 takes precedence) · CPC title

• C23C14/0094

  in transition mode · CPC title

• C23C14/0036

  Reactive sputtering · CPC title

• C23C14/0641 Primary

  Nitrides (C23C14/0617 takes precedence) · CPC title

• H01L41/187

  Electricity · mapped topic