Method for implanting a piezoelectric material

Patent metadata

Field	Value
Publication number	US-9991439-B2
Application number	US-201113808703-A
Country	US
Kind code	B2
Filing date	Jul 5, 2011
Priority date	Jul 6, 2010
Publication date	Jun 5, 2018
Grant date	Jun 5, 2018

Abstract

A method of producing a structure made of a piezoelectric material, including: a) production of a stack including at least one metal layer and at least one conductive layer on a substrate made of piezoelectric material, wherein at least one electrical contact is established between the conductive layer and a metal element outside the stack; b) an ionic and/or atomic implantation, through the conductive layer and the metal layer; c) transfer of the substrate onto a transfer substrate, followed by fracturing of the transferred piezoelectric substrate, in an embrittlement area.

First claim

The invention claimed is:

1. A method for producing a structure made of a piezoelectric material, the method comprising:
producing a stack including at least one buried metal layer and at least one electrically conductive surface layer on a substrate made of piezoelectric material, wherein at least one electrical contact is established between the conductive surface layer and the metal layer and a metal element outside the stack to establish a ground reference;
implanting one or more gaseous species, through an upper surface of the at least one electrically conductive surface layer and the at least one buried metal layer, to form an embrittlement area in the piezoelectric substrate; and
assembling the stack with a transfer substrate, followed by fracturing of the substrate made of the piezoelectric material, in the embrittlement area, to form a stack including at least one layer made of the piezoelectric material, the metal layer, and the transfer substrate.

2. The method according to claim 1 , wherein the at least one electrically conductive surface layer is also thermally conductive.

3. The method according to claim 1 , wherein the at least one electrically conductive surface layer is made of a material selected from the group consisting of:
a metal selected from the group consisting of Mo, Ni, Pt, Cr, Ru, Ti, W, Co, Ta, Cu, Al, Sn, and Ga;
an alloy of said metals; and
a material having at least one of the following properties: a thermal conductivity greater than 10 W/m·K, an electrical conductivity greater than 10 6 Siemens/m, and an acoustic impedance greater than 1·10 5 g/cm 2 ·s.

4. The method according to claim 1 , wherein the at least one electrically conductive surface layer has a squared resistivity lower than 10 Ω.

5. The method according to claim 1 , wherein the at least one electrically conductive surface layer has a squared resistivity lower than 1 Ω.

6. The method according to claim 1 , wherein the at least one electrically conductive surface layer is between 10 nm and 200 nm thick.

7. The method according to claim 1 , further comprising, before the implanting, densifying materials of the stack.

8. The method according to claim 1 , wherein the at least one electrically conductive surface layer is eliminated after the implanting and before the assembling.

9. The method according to claim 1 , further comprising forming a bonding layer or sacrificial layer, or a Bragg network, on the at least one metal layer.

10. The method according to claim 1 , wherein the metal element outside the stack is a substrate supporting the stack.

11. The method according to claim 1 , further comprising forming a sacrificial layer, or a Bragg network, or a bonding layer, on the transfer substrate before assembly.

12. The method according to claim 1 , wherein the piezoelectric material is made of LiNbO 3 or LiTaO 3 .

13. A method for producing a structure made of a piezoelectric material, the method comprising:
producing a single layer, which simultaneously is a metal layer and an electrically conductive surface layer, on a substrate made of piezoelectric material, wherein at least one electrical contact is established between the single layer and a metal element outside the single layer to establish a ground reference;
implanting one or more gaseous species, through an upper surface of the single layer, to form an embrittlement area in the piezoelectric substrate; and
assembling the single layer with a transfer substrate, followed by fracturing of the substrate made of the piezoelectric material, in the embrittlement area, to form a stack including at least one layer made of the piezoelectric material, the single layer, and the transfer substrate.

14. The method according to claim 13 , wherein, after the implanting and before the assembling, a proportion of thickness of the single layer is eliminated.

15. The method according to claim 13 , wherein the metal element outside the single layer is a substrate supporting the single layer.

16. The method according to claim 13 , further comprising forming a sacrificial layer, or a Bragg network, or a bonding layer, on the transfer substrate before assembly.

17. The method according to claim 13 , wherein the piezoelectric material is made of LiNbO 3 or LiTaO 3 .

18. A method for producing a structure made of a piezoelectric material, the method comprising:
producing a stack including at least one buried metal layer, at least one bonding layer, and at least one electrically conductive surface layer on a substrate made of piezoelectric material, wherein at least one electrical contact is established between the conductive surface layer and the metal layer and a metal element outside the stack through a conductive area formed in the bonding layer to establish a ground reference;
implanting one or more gaseous species, through an upper surface of the at least one electrically conductive surface layer and the at least one buried metal layer, to form an embrittlement area in the piezoelectric substrate; and
assembling the stack with a transfer substrate, followed by fracturing of the substrate made of the piezoelectric material, in the embrittlement area, to form a stack including at least one layer made of the piezoelectric material, the metal layer, the bonding layer, and the transfer substrate.

Assignees

• Deguet Chrystel
• Blanc Nicolas
• Imbert Bruno
• Moulet Jean Sebastien
• Commissariat Energie Atomique
• Soitec Silicon On Insulator

Inventors

• Deguet Chrystel
• Blanc Nicolas
• Imbert Bruno
• Moulet Jean-Sebastien

Classifications

• H01L41/313

  Electricity · mapped topic

• H03H9/131

  consisting of a multilayered structure · CPC title

• H03H3/02 Primary

  for the manufacture of piezoelectric or electrostrictive resonators or networks (H03H3/08 takes precedence) · CPC title

• Y10T29/42

  Piezoelectric device making · CPC title

• H01L41/22 Primary

  Electricity · mapped topic