Phase transformation in transition metal dichalcogenides
US-2016181516-A1 · Jun 23, 2016 · US
Thin film transition metal dichalcogenides and methods
US9991390B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9991390-B2 |
| Application number | US-201514871277-A |
| Country | US |
| Kind code | B2 |
| Filing date | Sep 30, 2015 |
| Priority date | Sep 30, 2014 |
| Publication date | Jun 5, 2018 |
| Grant date | Jun 5, 2018 |
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Abstract
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A coated substrate including a thin film of a transition metal dichalcogenide and associated methods are shown. In one example, the substrate is a semiconductor wafer. In one example, the thin film is atomically thin, and the substrate is a number of centimeters in diameter. In one example a crystalline structure of the thin film is substantially 2H hexagonal.
First claim
Opening claim text (preview).
What is claimed is: 1. An apparatus, comprising: a semiconductor wafer; and an atomically thin MoS 2 layer covering the semiconductor wafer, wherein the MoS 2 layer is a 2H crystal structure with an average grain size of 25.9+/−14.7 nm, wherein the MoS 2 layer has a band gap of approximately 1.84 eV. 2. The apparatus of claim 1 , further including an optoelectronic device formed on the semiconductor wafer. 3. The apparatus of claim 1 , wherein the MoS 2 layer is two monolayers thick. 4. An electronic device, comprising: a first circuit; a second circuit coupled to the first circuit, wherein the second circuit includes: a semiconductor substrate; and an atomically thin MoS 2 layer covering at least a portion of the semiconductor substrate, wherein the MoS 2 layer is a 2H crystal structure with an average grain size of 25.9+/−14.7 nm, wherein the MoS 2 layer has a band gap of approximately 1.84 eV. 5. The electronic device of claim 4 , wherein the second circuit includes an optoelectronic device.
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Classifications
Controlling the interface between substrate and epitaxial layer, e.g. by ion implantation followed by annealing · CPC title
being chalcogenide semiconductor materials not being oxides, e.g. ternary compounds · CPC title
Crystal orientation · CPC title
Monolayers · CPC title
being chalcogenide semiconducting materials not being oxides, e.g. ternary compounds · CPC title
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- What does patent US9991390B2 cover?
- A coated substrate including a thin film of a transition metal dichalcogenide and associated methods are shown. In one example, the substrate is a semiconductor wafer. In one example, the thin film is atomically thin, and the substrate is a number of centimeters in diameter. In one example a crystalline structure of the thin film is substantially 2H hexagonal.
- Who is the assignee on this patent?
- Univ California
- What technology area does this patent fall under?
- Primary CPC classification H01L29/78681. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Jun 05 2018 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 6 related publications on this page (citations in our corpus or others sharing the same primary CPC).