Mos2 thin film and method for manufacturing same

Patent metadata

Field	Value
Publication number	US-2016168694-A1
Application number	US-201314908863-A
Country	US
Kind code	A1
Filing date	Aug 13, 2013
Priority date	Jul 31, 2013
Publication date	Jun 16, 2016
Grant date	—

Abstract

The present disclosure relates to a MoS 2 thin film and a method for manufacturing the same. The present disclosure provides a MoS 2 thin film and a method for manufacturing the same using an atomic layer deposition method. In particular, the MoS 2 thin film is manufactured by an atomic layer deposition method without using a toxic gas such as H 2 S as a sulfur precursor. Thus, the present disclosure is eco-friendly. Furthermore, it is possible to prevent the damage and contamination of manufacturing equipment during the manufacturing process. In addition, it is possible to manufacture the MoS 2 thin film by precisely controlling the thickness of the MoS 2 thin film to the level of an atomic layer.

First claim

1 - 19 . (canceled)

20 . A MoS 2 thin film which is formed from a molybdenum precursor and a sulfur precursor and grown by an atomic layer deposition method.

21 . The MoS 2 thin film according to claim 20 , wherein the molybdenum precursor is one or more selected from a group consisting of MoF 6 , MoCl 6 and Mo(CO) 6 .

22 . The MoS 2 thin film according to claim 20 , wherein the sulfur precursor is a dialkyl disulfide or a dihalodisulfide.

23 . The MoS 2 thin film according to claim 20 , wherein the Raman spectrum of the MoS 2 thin film has peaks observed at 375-385 cm −1 and 400-410 cm −1 .

24 . The MoS 2 thin film according to claim 20 , wherein the MoS 2 thin film is comprised in any one selected from a group consisting of a semiconductor active layer of a transistor, a catalyst for hydrogen evolution reaction and an electrode of a lithium-ion battery.

25 . The MoS 2 thin film according to claim 20 , wherein the molybdenum precursor is Mo(CO) 6 and the sulfur precursor is dimethyl disulfide.

26 . The MoS 2 thin film according to claim 25 , wherein the ALD temperature window of the atomic layer deposition method is 100-120° C.

27 . A method for manufacturing a MoS 2 thin film, comprising:
1) forming a chemical functional group layer comprising Mo on a substrate by supplying a molybdenum precursor into a reactor in vacuum state; 2) removing an excess molybdenum precursor that has not formed the chemical functional group layer comprising Mo and a byproduct by supplying an inert gas into the reactor after 1); 3) forming a MoS 2 atomic layer by chemically adsorbing a sulfur precursor on the chemical functional group layer comprising Mo by supplying the sulfur precursor into the reactor; and 4) removing a sulfur precursor that has not been adsorbed in 3) and a byproduct by supplying an inert gas into the reactor after 3).

28 . The method for manufacturing a MoS 2 thin film according to claim 27 , wherein the molybdenum precursor is one or more selected from a group consisting of MoF 6 , MoCl 6 and Mo(CO) 6 .

29 . The method for manufacturing a MoS 2 thin film according to claim 27 , wherein the sulfur precursor is a dialkyl disulfide or a dihalodisulfide.

30 . The method for manufacturing a MoS 2 thin film according to claim 27 wherein the molybdenum precursor is Mo(CO) 6 and the sulfur precursor is dimethyl disulfide.

31 . The method for manufacturing a MoS 2 thin film according to claim 30 , wherein the ALD temperature window of the atomic layer deposition in 3) is 100-120° C.

32 . The method for manufacturing a MoS 2 thin film according to claim 27 , wherein, in 1), the molybdenum precursor is supplied at a pressure of 0.1-10 Torr.

33 . The method for manufacturing a MoS 2 thin film according to claim 27 , wherein, in 3), the sulfur precursor is supplied at a pressure of 0.1-10 Torr.

34 . The method for manufacturing a MoS 2 thin film according to claim 27 , which further comprises heat treatment at 400-1,000° C. after repeating 1) through 4).

Assignees

• Konkuk University Ind Corp Corp
• Univ Konkuk Ind Coop Corp

Inventors

• Min Yo-Sep

Classifications

• C01G39/06

  Sulfides · CPC title

• C23C16/45553

  characterized by the use of precursors specially adapted for ALD · CPC title

• C23C16/305 Primary

  Sulfides, selenides, or tellurides · CPC title

• C23C16/45555

  applied in non-semiconductor technology · CPC title

• C23C16/44

  characterised by the method of coating (C23C16/04 takes precedence) · CPC title