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Method for pulling a single crystal composed of silicon from a melt contained in a crucible, and single crystal produced thereby
US9988739B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9988739-B2 |
| Application number | US-201113014804-A |
| Country | US |
| Kind code | B2 |
| Filing date | Jan 27, 2011 |
| Priority date | Feb 10, 2010 |
| Publication date | Jun 5, 2018 |
| Grant date | Jun 5, 2018 |
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- Title
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Abstract
Official abstract text for this publication.
Silicon single crystals are pulled from a melt in a crucible, the single crystal surrounded by a heat shield, the lower end of which is a distance h from the melt surface, wherein gas flows downward between the single crystal and the heat shield, outward between the lower end of the heat shield and the melt, and then upward in the region outside the heat shield. The internal diameter of the heat shield at its lower end is 55 mm or more than the diameter of the single crystal, and the radial width of the heat shield at its lower end is not more than 20% of the diameter of the single crystal. Highly doped single crystals pulled accordingly have a void concentration ≤50 m −3 .
First claim
Opening claim text (preview).
What is claimed is: 1. A single crystal composed of silicon having a diameter of at least 100 mm, a crystal orientation, a dopant concentration of an element of the third or fifth main group of the periodic system of 1·10 17 to 1·10 20 cm −3 and an oxygen concentration of 4·10 17 to 9·10 17 cm −3 , wherein the concentration of macroscopic voids having a diameter of at least 50 μm in the single crystal is not more than 50 m −3 .
Assignees
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Classifications
- C30B29/06Primary
Silicon · CPC title
Physical dimension · CPC title
Heating of the melt or the crystallised materials · CPC title
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- What does patent US9988739B2 cover?
- Silicon single crystals are pulled from a melt in a crucible, the single crystal surrounded by a heat shield, the lower end of which is a distance h from the melt surface, wherein gas flows downward between the single crystal and the heat shield, outward between the lower end of the heat shield and the melt, and then upward in the region outside the heat shield. The internal diameter of the hea…
- Who is the assignee on this patent?
- Gmeilbauer Erich, Vorbuchner Robert, Weber Martin, and 1 more
- What technology area does this patent fall under?
- Primary CPC classification C30B29/06. Mapped technology areas include Chemistry & Metallurgy.
- When was this patent published?
- Publication date Tue Jun 05 2018 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).