Slurry, polishing liquid set, polishing liquid, method for polishing substrate, and substrate

Patent metadata

Field	Value
Publication number	US-9988573-B2
Application number	US-201113582969-A
Country	US
Kind code	B2
Filing date	Nov 21, 2011
Priority date	Nov 22, 2010
Publication date	Jun 5, 2018
Grant date	Jun 5, 2018

Abstract

The polishing liquid according to the embodiment comprises abrasive grains, an additive and water, wherein the abrasive grains satisfy either or both of the following conditions (a) and (b).
(a) Producing absorbance of at least 1.50 for light with a wavelength of 400 nm in an aqueous dispersion with a content of the abrasive grains adjusted to 1.0 mass %, and also producing light transmittance of at least 50%/cm for light with a wavelength of 500 nm in an aqueous dispersion with a content of the abrasive grains adjusted to 1.0 mass %. (b) Producing absorbance of at least 1.000 for light with a wavelength of 290 nm in an aqueous dispersion with a content of the abrasive grains adjusted to 0.0065 mass %, and also producing light transmittance of at least 50%/cm for light with a wavelength of 500 nm in an aqueous dispersion with a content of the abrasive grains adjusted to 1.0 mass %.

First claim

The invention claimed is:

1. A slurry comprising abrasive grains and water,
the abrasive grains including a tetravalent metal element hydroxide, and producing absorbance of at least 1.50 for light with a wavelength of 400 nm in an aqueous dispersion with a content of the abrasive grains adjusted to 1.0 mass %, and producing light transmittance of at least 50%/cm for light with a wavelength of 500 nm in an aqueous dispersion with a content of the abrasive grains adjusted to 1.0 mass %.

2. A slurry comprising abrasive grains and water,
the abrasive grains including a tetravalent metal element hydroxide, and producing absorbance of at least 1.000 for light with a wavelength of 290 nm in an aqueous dispersion with a content of the abrasive grains adjusted to 0.0065 mass %, and producing light transmittance of at least 50%/cm for light with a wavelength of 500 nm in an aqueous dispersion with a content of the abrasive grains adjusted to 1.0 mass %.

3. The slurry according to claim 2 , wherein the abrasive grains produce absorbance of at least 1.50 for light with a wavelength of 400 nm in an aqueous dispersion with a content of the abrasive grains adjusted to 1.0 mass %.

4. The slurry according to claim 1 , wherein the abrasive grains produce absorbance of not greater than 0.010 for light with a wavelength of 450-600 nm in an aqueous dispersion with a content of the abrasive grains adjusted to 0.0065 mass %.

5. The slurry according to claim 1 , wherein the tetravalent metal element hydroxide is obtained by mixing a tetravalent metal element salt and an alkali solution.

6. The slurry according to claim 1 , wherein the abrasive grains include a hydroxide of cerium.

7. A polishing liquid set comprising constituent components of a polishing liquid separately stored as a first liquid and a second liquid, so that the first liquid and second liquid are mixed to form the polishing liquid,
wherein the first liquid is the slurry according to claim 1 , and the second liquid comprises an additive and water.

8. The polishing liquid set according to claim 7 , wherein the additive is at least one selected from the group consisting of vinyl alcohol polymers and derivatives of the vinyl alcohol polymers.

9. The polishing liquid set according to claim 7 , wherein a content of the additive is 0.01 mass % or greater based on a total mass of the polishing liquid.

10. A polishing liquid comprising abrasive grains, an additive and water,
the abrasive grains including a tetravalent metal element hydroxide, and producing absorbance of at least 1.50 for light with a wavelength of 400 nm in an aqueous dispersion with a content of the abrasive grains adjusted to 1.0 mass %, and producing light transmittance of at least 50%/cm for light with a wavelength of 500 nm in an aqueous dispersion with a content of the abrasive grains adjusted to 1.0 mass %.

11. A polishing liquid comprising abrasive grains, an additive and water,
the abrasive grains including a tetravalent metal element hydroxide, and producing absorbance of at least 1.000 for light with a wavelength of 290 nm in an aqueous dispersion with a content of the abrasive grains adjusted to 0.0065 mass %, and producing light transmittance of at least 50%/cm for light with a wavelength of 500 nm in an aqueous dispersion with a content of the abrasive grains adjusted to 1.0 mass %.

12. The polishing liquid according to claim 11 , wherein the abrasive grains produce absorbance of at least 1.50 for light with a wavelength of 400 nm in an aqueous dispersion with a content of the abrasive grains adjusted to 1.0 mass %.

13. The polishing liquid according to claim 10 , wherein the abrasive grains produce absorbance of not greater than 0.010 for light with a wavelength of 450-600 nm in an aqueous dispersion with a content of the abrasive grains adjusted to 0.0065 mass %.

14. The polishing liquid according to claim 10 , wherein the tetravalent metal element hydroxide is obtained by mixing a tetravalent metal element salt and an alkali solution.

15. The polishing liquid according to claim 10 , wherein the abrasive grains include a hydroxide of cerium.

16. The polishing liquid according to claim 10 , wherein the additive is at least one selected from the group consisting of vinyl alcohol polymers and derivatives of the vinyl alcohol polymers.

17. The polishing liquid according to claim 10 , wherein a content of the additive is 0.01 mass % or greater based on a total mass of the polishing liquid.

18. A substrate polishing method comprising:
a step of placing a film to be polished, of a substrate which has the film to be polished on its surface, so as to face an abrasive pad, and
a step of polishing at least a portion of the film to be polished while supplying the slurry according to claim 1 between the abrasive pad and the film to be polished.

19. A substrate polishing method comprising:
a step of placing a film to be polished, of a substrate which has the film to be polished on its surface, so as to face an abrasive pad,
a step of mixing the first liquid and second liquid of the polishing liquid set according to claim 7 to obtain the polishing liquid, and
a step of polishing at least a portion of the film to be polished while supplying the polishing liquid between the abrasive pad and the film to be polished.

20. A substrate polishing method comprising:
a step of placing a film to be polished, of a substrate which has the film to be polished on its surface, so as to face an abrasive pad, and
a step of polishing at least a portion of the film to be polished while respectively supplying both the first liquid and second liquid of the polishing liquid set according to claim 7 between the abrasive pad and the film to be polished.

21. A substrate polishing method comprising:
a step of placing a film to be polished, of a substrate which has the film to be polished on its surface, so as to face an abrasive pad, and
a step of polishing at least a portion of the film to be polished while supplying the polishing liquid according to claim 10 between the abrasive pad and the film to be polished.

22. The polishing method according to claim 18 , wherein the film to be polished includes silicon oxide.

23. The polishing method according to claim 18 , wherein a surface of the film to be polished has irregularities.

24. The slurry according to claim 2 , wherein the abrasive grains produce absorbance of not greater than 0.010 for light with a wavelength of 450-600 nm in an aqueous dispersion with a content of the abrasive grains adjusted to 0.0065 mass %.

25. The slurry according to claim 2 , wherein the tetravalent metal element hydroxide is obtained by mixing a tetravalent metal element salt and an alkali solution.

26. The slurry according to claim 2 , wherein the abrasive grains include a hydroxide of cerium.

27. A polishing liquid set comprising constituent components of a polishing liquid separately stored as a first liquid and a second liquid, so that the first liquid and second liquid are mixed to form the polishing liquid,
wherein the first liquid is the slurry according to claim 2 , and the second liquid comprises an additive and water.

28. The polishing liquid set according to claim 27 , wherein the additive is at least one selected from the group consisting of vinyl alcohol polymers and derivatives of the vinyl alcohol polymers.

Assignees

• Iwano Tomohiro
• Narita Takenori
• Ryuzaki Daisuke
• Hitachi Chemical Co Ltd

Inventors

• Iwano Tomohiro
• Narita Takenori
• Ryuzaki Daisuke

Classifications

• H10P95/062 Primary

  involving a dielectric removal step · CPC title

• H10P52/402

  of semiconductor materials · CPC title

• B24B37/044

  characterised by the composition of the lapping agent · CPC title

• C09G1/02 Primary

  containing abrasives or grinding agents {(abrasives as such C09K3/14; polishing of semi-conductors H10P52/40)} · CPC title

• H01L21/30625

  Electricity · mapped topic