Temporary mechanical stabilization of semiconductor cavities

Patent metadata

Field	Value
Publication number	US-9988262-B2
Application number	US-201715704537-A
Country	US
Kind code	B2
Filing date	Sep 14, 2017
Priority date	Sep 23, 2016
Publication date	Jun 5, 2018
Grant date	Jun 5, 2018

Abstract

A method for fabricating an electronic device is disclosed. In one example, the method comprises providing a semiconductor wafer, forming a plurality of cavities into the semiconductor wafer, filling a stabilization material into the cavities, fabricating a temporary panel by applying a cap sheet onto the semiconductor wafer, the cap sheet covering the cavities, singulating the temporary panel into a plurality of semiconductor devices, fabricating an embedded wafer by embedding the semiconductor devices in an encapsulant, removing the cap sheet of each one of the semiconductor devices, and singulating the embedded wafer into a plurality of electronic devices.

First claim

What is claimed is:

1. A method for fabricating an electronic device, the method comprising:
providing a semiconductor wafer;
forming a plurality of cavities into the semiconductor wafer;
filling a stabilization material into the cavities;
fabricating a temporary panel by applying a cap-sheet onto the semiconductor wafer, the cap sheet covering the cavities;
singulating the temporary panel into a plurality of semiconductor devices;
fabricating an embedded wafer by embedding the semiconductor devices in an encapsulant;
removing the cap sheet of each one of the semiconductor devices; and
singulating the embedded wafer into a plurality of electronic devices.

2. The method according to claim 1 , further comprising:
removing the stabilization material out of the cavities after removing the cap sheet.

3. The method according to claim 1 , wherein
the stabilization material comprises a melting temperature T s in a range from 40° C. to 160° C.

4. The method according to claim 1 , wherein
the stabilization material is configured to change its physical state from amorphous to viscoelastic or vice versa at a temperature T a wherein the temperature is in a range from 40° C. to 160° C.

5. The method according to claim 1 , wherein
the stabilization material comprises one or more of a thermoplast material, a polymer, a wax, a polyethylene, a polybutadiene, a trans-1,4-polybutadiene, a polypropylene, an amorphous polymer, and an ataxic polystyrene.

6. The method according to claim 1 , wherein
the stabilization material is filled into the cavities so that in each cavity 20% to 70% of the volume of the cavity is occupied by the stabilization material.

7. The method according to claim 6 , wherein
the remaining volume of the cavity is evacuated.

8. The method according to claim 1 , wherein
the semiconductor wafer comprises a first main face and a second main face opposite to the first main face, and wherein, prior to the forming of the cavities, a plurality of MEMS structures is formed at the first main face and the cavities are formed in the second main face so that each cavity extends from the second main face until a distance above one of the MEMS structures.

9. The method according to claim 1 , wherein
forming a plurality of cavities comprises etching the semiconductor material of the semiconductor wafer.

10. The method according to claim 1 , wherein
applying a cap sheet comprises applying a semiconductor sheet, in particular a further semiconductor wafer, onto the semiconductor wafer.

11. The method according to claim 1 , wherein
fabricating an embedded wafer comprises a wafer level packaging process.

12. The method according to claim 1 , wherein
removing the cap sheet comprises grinding.

13. A method for fabricating an electronic device, the method comprising:
providing a semiconductor wafer comprising a plurality of cavities;
filling a stabilization material into the cavities;
singulating the semiconductor wafer into a plurality of semiconductor devices;
fabricating an embedded wafer by embedding the semiconductor devices in an encapsulant;
removing the stabilization material out of the cavities; and
singulating the embedded wafer into a plurality of electronic devices.

14. The method according to claim 13 , further comprising:
selecting the kind of stabilization material in dependence on the process temperatures of the subsequent steps of the method.

15. The method according to claim 13 , wherein
the stabilization material comprises one or more of a thermoplast material, a polymer, a wax, a polyethylene, a polybutadiene, a trans-1,4-polybutadiene, a polypropylene, an amorphous polymer, and an ataxic polystyrene.

16. The method according to claim 13 , wherein
removing the stabilization material comprises rinsing out the cavities by means of a liquid, in particular by means of acetone or toluene.

17. A method for fabricating an electronic device, the method comprising:
providing a semiconductor wafer;
forming a plurality of cavities into the semiconductor wafer;
filling a stabilization material into the cavities;
fabricating a temporary panel by applying a cap-sheet onto the semiconductor wafer, the cap sheet covering the cavities;
singulating the temporary panel into a plurality of semiconductor devices;
fabricating an embedded wafer by embedding the semiconductor devices in an encapsulant;
removing the cap sheet of each one of the semiconductor devices;
singulating the embedded wafer into a plurality of electronic devices; and
removing the stabilization material out of the cavities after removing the cap sheet, wherein the stabilization material is configured to change its physical state from amorphous to viscoelastic or vice versa at a temperature T a wherein the temperature is in a range from 40° C. to 160° C.

18. The method according to claim 17 , wherein
the stabilization material comprises one or more of a thermoplast material, a polymer, a wax, a polyethylene, a polybutadiene, a trans-1,4-polybutadiene, a polypropylene, an amorphous polymer, and an ataxic polystyrene.

19. The method according to claim 17 , wherein
the stabilization material is filled into the cavities so that in each cavity 20% to 70% of the volume of the cavity is occupied by the stabilization material.

20. The method according to claim 19 , wherein
the remaining volume of the cavity is evacuated.

Assignees

• Infineon Technologies Ag

Inventors

• Maier Dominic
• Mahler Joachim
• Porwol Daniel
• Sigl Alfred

Classifications

• B81C2201/013

  Etching · CPC title

• B81C2203/0118

  Bonding a wafer on the substrate, i.e. where the cap consists of another wafer · CPC title

• B81C2203/0127

  Using a carrier for applying a plurality of packaging lids to the system wafer · CPC title

• B81C1/00047 Primary

  Cavities · CPC title

• B81C1/00666

  Treatments for controlling internal stress or strain in MEMS structures · CPC title