Fluorine-modification process and applications thereof

Patent metadata

Field	Value
Publication number	US-9985230-B2
Application number	US-201514824580-A
Country	US
Kind code	B2
Filing date	Aug 12, 2015
Priority date	Jun 12, 2012
Publication date	May 29, 2018
Grant date	May 29, 2018

Abstract

The present invention is related to a process for reducing surface energy of a hole transport layer. The disclosed process comprises providing a hole transport layer; and providing a fluorine-containing layer directly on said hole transport layer. The configuration of said fluorine-containing layer reduces the structural disorder of an active layer and is able to recover a moisture-degraded hole transport layer, and thereby improves the performance of an electric device containing the same.

First claim

What claims is:

1. An electronic device, comprising electric-connected layers in order:
a first electrode; a hole transport layer;
a fluorine-containing layer, which is deposited directly on said hole transport layer; an active layer, which is deposited directly on said fluorine-containing layer, an electron transport layer; and a second electrode; wherein said hole transport layer has a surface energy of 7-65 mJ/m 2 .

2. The electronic device according to claim 1 , wherein said fluorine-containing layer comprises fluorocarbon, silane derives thereof, or a mixture thereof.

3. The electronic device according to claim 1 , which is manufactured by the process comprising the following steps:
providing a substrate coated with a conductive material as a first electrode;
providing a hole transport layer on said substrate;
providing a fluorine-containing layer directly on said hole transport layer;
providing an active layer directly on said fluorine-containing layer;
providing an electron transport layer on said active layer; and
providing a second electrode on said electron transport layer.

4. The electronic device according to claim 3 , which is manufactured by the process further comprising a heating step of heating said fluorine-containing layer at a temperature of 50˜300° C.

5. The electronic device according to claim 1 , which is a solar cell, a thin film transistor, or a light emitting diode.

6. The electronic device according to claim 1 , which has an open-circuit voltage (Voc) of 0.2˜0.8 V.

7. The electronic device according to claim 1 , wherein said active layer comprises a mixture of poly(3-hexylthiophene) and [6,6]-phenyl C61-butyric acid methyl ester.

8. The electronic device according to claim 1 , wherein said active layer comprises a P-layer and a N-layer; wherein said P-layer directly contacts with said fluorine-containing layer.

9. The electronic device according to claim 8 , wherein said P-layer is a pentacene layer.

10. The electronic device according to claim 9 , wherein said pentacene layer has no fiber-like grain.

11. The electronic device according to claim 8 , wherein said N-layer is a C60 layer.

12. The electronic device according to claim 9 , wherein said pentacene layer has a diffraction pattern as shown in FIG. 3 b.

Assignees

• Academia Sinica

Inventors

• Chen Kuei-Hsien
• Han Hsieh-Cheng
• Chang Ching-Chun
• Chen Li-Chyong
• Du Chan-Yi

Classifications

• H01L51/0047

  Electricity · mapped topic

• H01L51/0043

  Electricity · mapped topic

• H01L51/4246

  Electricity · mapped topic

• Y02E10/549

  Organic PV cells · CPC title

• H01L51/424 Primary

  Electricity · mapped topic