Dielectric and dielectric ink and capacitor and transistor and device

Patent metadata

Field	Value
Publication number	US-9985229-B2
Application number	US-201615262302-A
Country	US
Kind code	B2
Filing date	Sep 12, 2016
Priority date	May 9, 2016
Publication date	May 29, 2018
Grant date	May 29, 2018

Abstract

A dielectric and a dielectric ink include a dielectric material. The dielectric material includes ceramide or a ceramide derivative. A capacitor and a transistor may include the dielectric material. A device may include at least one of a capacitor and a transistor that includes the dielectric material. A dielectric that includes ceramide or a ceramide derivative may be configured to provide dielectric performance in a bio field. The effect on a human body by the dielectric may be reduced, based on the dielectric material of the dielectric including ceramide or a ceramide derivative.

First claim

What is claimed is:

1. A dielectric, comprising:
a dielectric material including one material of ceramide or a ceramide derivative, the one material having a structure that fatty acid is linked with a sphingosine chain through an amid bond,
wherein a dielectric constant of the dielectric material is greater than or equal to about 9.0.

2. The dielectric of claim 1 , wherein the dielectric material is a soluble material.

3. The dielectric of claim 1 , wherein the dielectric is a thin film having a thickness of less than or equal to about 50 nm.

4. A capacitor, comprising:
a first electrode and a second electrode; and
a dielectric layer between the first electrode and the second electrode, the dielectric layer including the dielectric of claim 1 .

5. The capacitor of claim 4 , wherein the dielectric layer is associated with an insulation breakdown electric field strength that is greater than or equal to about 7 MV/cm.

6. The capacitor of claim 4 , wherein the dielectric layer has a thickness of less than or equal to about 50 nm.

7. A device, comprising:
the capacitor of claim 4 .

8. A transistor, comprising:
a gate electrode;
a semiconductor overlapping with the gate electrode;
a gate dielectric layer between the gate electrode and the semiconductor, the gate dielectric layer including the dielectric of claim 1 ; and
a source electrode and a drain electrode electrically connected with the semiconductor.

9. The transistor of claim 8 , wherein the gate dielectric layer is associated with an insulation breakdown electric field strength that is greater than or equal to about 7 MV/cm.

10. The transistor of claim 8 , wherein the gate dielectric layer has a thickness of less than or equal to about 50 nm.

11. The transistor of claim 8 , wherein the semiconductor is an organic semiconductor.

12. A device, comprising:
the transistor of claim 8 .

13. A device, comprising:
the dielectric of claim 1 .

14. A dielectric ink, comprising:
a dielectric material including one material of ceramide or a ceramide derivative, the one material having a structure that fatty acid is linked with a sphingosine chain through an amid bond; and
a solvent,
wherein a dielectric constant of the dielectric material is greater than or equal to about 9.0.

15. The dielectric ink of claim 14 , wherein the solvent includes at least one of chloroform and methanol.

16. The dielectric ink of claim 15 , wherein,
the solvent includes a mixture of chloroform and methanol; and
the mixture includes about 80 to about 99 volume % of chloroform and about 1 to about 20 volume % of methanol.

17. The dielectric ink of claim 14 , wherein the dielectric ink includes impurity ions, such that a concentration of impurity ions in the dielectric ink is less than or equal to about 100 ppm.

Assignees

• Samsung Electronics Co Ltd

Inventors

• Kwon Youngnam
• Kim Junghwa
• Jang Jaewon

Classifications

• H01L51/052 Primary

  Electricity · mapped topic

• H01G4/005

  Electrodes · CPC title

• H01G4/04 Primary

  Liquid dielectrics · CPC title

• H01L29/51

  Electricity · mapped topic

• H10D30/60

  Insulated-gate field-effect transistors [IGFET] (H10D30/40 takes precedence) · CPC title