Sensor with field effect transistor having the gate dielectric consisting of a layer of lipids and method of fabricating this transistor

Patent metadata

Field	Value
Publication number	US-9018740-B2
Application number	US-201214361026-A
Country	US
Kind code	B2
Filing date	Nov 30, 2012
Priority date	Dec 6, 2011
Publication date	Apr 28, 2015
Grant date	Apr 28, 2015

Abstract

A field effect transistor ( 1 ) including: a semiconducting substrate ( 2 ) having two areas doped with electric charge carriers forming a source area ( 3 ) and a drain area ( 4 ), respectively; a dielectric layer positioned above the semiconducting substrate ( 2 ) between the source ( 3 ) and the drain ( 4 ) and forming the gate dielectric ( 9 ) of the field effect transistor ( 1 ); a gate ( 11 ) consisting of a reference electrode ( 8 ) and of a conductive solution ( 10 ), the solution ( 10 ) being in contact with the gate dielectric ( 9 ); and the gate dielectric ( 9 ) consists of a layer of lipids ( 13 ) in direct contact with the semiconducting layer ( 2 ). The invention also relates to a method for manufacturing such a field effect transistor ( 1 ) is disclosed.

First claim

What is claimed is:

1. A field effect transistor including:
a semiconducting substrate having two areas doped with electric charge carriers forming a source area and a drain area, respectively;
a dielectric layer positioned above the semiconducting substrate between the source and the drain and forming the gate dielectric of the field effect transistor;
a gate consisting of a reference electrode and of a conductive solution, the conductive solution being in contact with the ga…

Assignees

• Charrier Anne
• Dallaporta Hervé
• Nguyen Duc Tuyen
• Centre Nat Rech Scient

Inventors

• Charrier Anne
• Dallaporta Hervé
• Nguyen Duc Tuyen

Classifications

• H10D64/0134

  Electricity · mapped topic

• G01N27/414 Primary

  Physics · mapped topic

• H10D64/68

  Electricity · mapped topic

• H01L29/51

  Electricity · mapped topic

• H01L21/28185

  Electricity · mapped topic