Dual band ultraviolet (UV) and infrared radiation detector

Patent metadata

Field	Value
Publication number	US-9985058-B2
Application number	US-201615278619-A
Country	US
Kind code	B2
Filing date	Sep 28, 2016
Priority date	Sep 28, 2016
Publication date	May 29, 2018
Grant date	May 29, 2018

Abstract

A dual band infrared and ultraviolet radiation detector having an ultraviolet radiation detector embedded within a pair of IR anti-reflection layers wherein a first one of the infrared anti-reflection layer reflects ultraviolet energy passing through from the semiconductor, ultraviolet radiation detector back to the semiconductor, ultraviolet radiation detector.

First claim

What is claimed is:

1. A dual band infrared and ultraviolet radiation detector, comprising:
an infrared radiation detector;
an infrared radiation filter, disposed over infrared radiation detector, the infrared radiation filter being transparent to infrared radiation band and absorptive to radiation adjacent to the infrared radiation band; and
an ultraviolet radiation detector disposed over the infrared radiation filter, the ultraviolet radiation detector comprising:
a Schottky contact metal layer on an upper surface of the infrared radiation filter;
a layer of vapor deposited semiconductor, ultraviolet radiation detector material disposed directly on and forming a Schottky contact with, the Schottky contact metal layer; and
an ohmic contact metal in ohmic contact with a portion of the layer of the semiconductor, ultraviolet radiation detector material;
wherein radiation in both the infrared band and in the ultraviolet band passes to the ultraviolet radiation detector;
wherein the ultraviolet radiation is intercepted and detected by the ultraviolet radiation detector and infrared radiation passes through the ultraviolet radiation detector is intercepted and detected by the infrared radiation detector.

2. The dual band infrared and ultraviolet radiation detector recited in claim 1 wherein the layer of semiconductor, ultraviolet radiation detector material is a vapor deposited layer.

3. The dual band infrared and ultraviolet radiation detector recited in claim 2 wherein the Schottky contact metal layer and the ohmic contact metal layer are disposed on opposite surfaces of the layer of semiconductor, ultraviolet radiation detector material.

4. The dual band infrared and ultraviolet radiation detector recited in claim 3 wherein the layer of semiconductor, ultraviolet radiation detector material has a thickness in a range of 0.25 to 2 micron.

5. The dual band infrared and ultraviolet radiation detector recited in claim 3 wherein the Schottky contact metal layer extends laterally along a surface of the layer of semiconductor, ultraviolet radiation detector material and wherein the layer of semiconductor, ultraviolet radiation detector material has a c-axis perpendicular to the upper surface of the layer of semiconductor, ultraviolet radiation detector material.

6. The dual band infrared and ultraviolet radiation detector recited in claim 1 including an anti-reflection layer disposed between an upper surface of the infrared radiation filter and the Schottky contact metal.

7. The dual band infrared and ultraviolet radiation detector recited in claim 6 wherein the anti-reflection layer reflects ultraviolet energy passing through from the layer of semiconductor, ultraviolet radiation detector material is reflected back to the layer of semiconductor, ultraviolet radiation detector material.

8. A dual band infrared (IR) and ultraviolet (UV) radiation detector, comprising:
an infrared radiation (IR) detector;
an infrared radiation filter, disposed over infrared radiation detector, the infrared radiation filter being transparent to infrared radiation band and absorptive to radiation adjacent to the infrared radiation band; and
an ultraviolet radiation detector disposed over the infrared radiation filter, the ultraviolet radiation detector comprising:
an anti-reflection structure for the IR detector, comprising:
a layer of a semiconductor, ultraviolet radiation detector material for detecting UV radiation; and
an IR anti-reflection glass disposed under the layer of semiconductor, ultraviolet radiation detector material;
wherein the IR anti-reflection glass index of refraction is greater than the index of refraction of the layer of semiconductor, ultraviolet radiation detector material;
wherein UV energy passing through the layer of semiconductor, ultraviolet radiation detector material is reflected by the IR anti-reflection glass back to the layer of semiconductor, ultraviolet radiation detector material for absorption by the layer of semiconductor, ultraviolet radiation detector material.

9. A dual band infrared (IR) and ultraviolet (UV) radiation detector, comprising:
an infrared radiation (IR) detector;
an infrared radiation filter, disposed over infrared radiation detector, the infrared radiation filter being transparent to infrared radiation band and absorptive to radiation adjacent to the infrared radiation band; and
an ultraviolet radiation detector structure disposed over the infrared radiation filter, the ultraviolet radiation detector structure comprising:
a first infrared anti-reflection layer disposed on the infrared radiation filter;
a semiconductor, ultraviolet radiation detector disposed over the first infrared anti-reflection layer;
a second infrared anti-reflection layer disposed on the semiconductor, ultraviolet radiation detector.

10. A dual band infrared (IR) and ultraviolet (UV) radiation detector recited in claim 9 wherein: the index of refraction of the second infrared anti-reflection layer to IR radiation is less than the index of refraction of the semiconductor, ultraviolet radiation detector to IR radiation; the index of refraction of the semiconductor, ultraviolet radiation detector to IR radiation is less than the index of refraction of first infrared anti-reflection layer; and the index of refraction of first infrared anti-reflection layer is less than the index of refraction of the infrared radiation filter.

11. An ultraviolet radiation detector structure disposed over an infrared radiation filter, the ultraviolet radiation detector structure, comprising:
a first infrared anti-reflection layer disposed on the infrared radiation filter;
a semiconductor, ultraviolet radiation detector disposed over the first infrared anti-reflection layer;
a second infrared anti-reflection layer disposed on the semiconductor, ultraviolet radiation detector;
including a Schottky contact metal disposed between the first infrared anti-reflection layer and the semiconductor, ultraviolet radiation detector.

12. The ultraviolet radiation detector structure recited in claim 11 wherein the semiconductor, ultraviolet radiation detector is in Schottky contact with the Schottky contact metal.

13. An ultraviolet radiation detector structure disposed over an infrared radiation filter, the ultraviolet radiation detector structure, comprising:
a first infrared anti-reflection layer disposed on the infrared radiation filter;
a semiconductor, ultraviolet radiation detector disposed over the first infrared anti-reflection layer;
a second infrared anti-reflection layer disposed on the semiconductor, ultraviolet radiation detector;
wherein the first infrared anti-reflection layer reflects ultraviolet energy passing through from the semiconductor, ultraviolet radiation detector back to the semiconductor, ultraviolet radiation detector.

14. An ultraviolet radiation detector structure disposed over an infrared radiation filter, the ultraviolet radiation detector structure, comprising:
a first infrared anti-reflection layer disposed on the infrared radiation filter;
a semiconductor, ultraviolet radiation detector disposed over the first infrared anti-reflection layer;
a second infrared anti-reflection layer disposed on the semiconductor, ultraviolet radiation detector
wherein the semiconductor, ultraviolet radiation detector has a thickness in a range of 0.25 to 2 microns.

15. The ultraviolet radiation detector structure recited in claim 14 wherein the semiconductor, ultraviolet radiation detector is CdS.

16. The ultraviolet radiation detector structure recited in claim 14

Assignees

• Raytheon Co

Inventors

• Barker Delmar L
• Clarke Jeffrey
• Hicks Charles W
• Green Marguerite J

Classifications

• H01L31/02161

  Electricity · mapped topic

• H01L31/0296

  Electricity · mapped topic

• H01L27/1443 Primary

  Electricity · mapped topic

• H01L31/1828

  Electricity · mapped topic

• H01L31/02162

  Electricity · mapped topic