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Apparatus and method for sensing incident light having dual photodiode to absorb light in respective depletion regions controlled by different bias voltages
US9212992B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9212992-B2 |
| Application number | US-201313943305-A |
| Country | US |
| Kind code | B2 |
| Filing date | Jul 16, 2013 |
| Priority date | Jul 18, 2012 |
| Publication date | Dec 15, 2015 |
| Grant date | Dec 15, 2015 |
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Abstract
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A solid-state photodetector with variable spectral response that can produce a narrow or wide response spectrum of incident light. Some embodiments include a solid-state device structure that includes a first photodiode and a second photodiode that share a common anode region. Bias voltages applied to the first photodiode and/or the second photodiode may be used to control the thicknesses of depletion regions of the photodiodes and/or a common anode region to vary the spectral response of the photodetector. Thickness of the depletion regions and/or the common anode region may be controlled based on resistance between multiple contacts of the common anode region and/or capacitance of the depletion regions. Embodiments include control circuits and methods for determining spectral characteristics of incident light using the variable spectral response photodetector.
First claim
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What is claimed is: 1. An apparatus for sensing incident light, the apparatus comprising: a light detector that receives the incident light at a light acceptance surface, comprising: a first photodiode that absorbs a first portion of the incident light in a first depletion region, the first photodiode generating a photocurrent responsive to the absorbed first portion of incident light; and a second photodiode that absorbs a second portion of the incident light in a second deple…
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Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
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- What does patent US9212992B2 cover?
- A solid-state photodetector with variable spectral response that can produce a narrow or wide response spectrum of incident light. Some embodiments include a solid-state device structure that includes a first photodiode and a second photodiode that share a common anode region. Bias voltages applied to the first photodiode and/or the second photodiode may be used to control the thicknesses of de…
- Who is the assignee on this patent?
- Microsemi Corp
- What technology area does this patent fall under?
- Primary CPC classification G01N21/55. Mapped technology areas include Physics.
- When was this patent published?
- Publication date Tue Dec 15 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).