Semiconductor device comprising a clamping structure

Patent metadata

Field	Value
Publication number	US-9985017-B2
Application number	US-201615210640-A
Country	US
Kind code	B2
Filing date	Jul 14, 2016
Priority date	Jul 15, 2015
Publication date	May 29, 2018
Grant date	May 29, 2018

Abstract

Semiconductor device with a semiconductor body that includes a clamping structure including a pn junction diode and a Schottky junction diode serially connected back to back between a first contact and a second contact. A breakdown voltage of the pn junction diode is greater than 100 V and a breakdown voltage of the Schottky junction diode is greater than 10 V.

First claim

What is claimed is:

1. A semiconductor device, comprising:
a semiconductor body comprising a clamping structure including a pn junction diode and a Schottky junction diode serially connected back to back between a first contact and a second contact, wherein a breakdown voltage of the pn junction diode is greater than 100 V and a breakdown voltage of the Schottky junction diode is greater than 10 V, and
a power transistor including first and second load terminals and a control terminal, wherein the clamping structure is electrically connected between the control terminal and the second load terminal, the second load terminal being a drain contact of an insulated gate field effect transistor, a collector contact of an insulated gate bipolar transistor, or a collector contact of a bipolar junction transistor, the control terminal being a corresponding contact of a gate of an insulated gate field effect transistor, a gate of an insulated gate bipolar transistor, or a base of a bipolar junction transistor.

2. The semiconductor device of claim 1 , wherein the pn junction diode and the Schottky junction diode share at least one semiconductor region of the semiconductor body.

3. The semiconductor device of claim 1 , wherein the pn junction diode electrically connected between the Schottky junction diode and one of the first and second contacts is a single pn junction diode.

4. The semiconductor device of claim 1 , wherein the pn junction diode and the Schottky junction diode serially connected back to back form a discrete semiconductor clamping device in a semiconductor package.

5. The semiconductor device of claim 1 , wherein the power transistor is a discrete power transistor, the power transistor and the clamping structure being formed in different semiconductor dies.

6. The semiconductor device of claim 5 , wherein the different semiconductor dies are mounted on a common lead frame.

7. The semiconductor device of claim 6 , wherein the clamping structure and the power transistor are included in a single chip package, a control pin of the chip package being electrically connected to a control terminal contact area of the power transistor by a first bond wire, and the control pin of the chip package being electrically connected to the pn junction diode of the clamping structure by a second bond wire.

8. The semiconductor device of claim 6 , wherein a drift zone of the power transistor, a cathode region of the Schottky junction diode and a cathode region of the pn junction diode are formed in a same semiconductor region.

9. The semiconductor device of claim 8 , wherein a breakdown voltage between first and second load terminals of the power transistor is greater than a breakdown voltage of the clamping structure connected in parallel to the second load terminal and the control terminal.

10. The semiconductor device of claim 1 , wherein the power transistor and the clamping structure are integrated in the semiconductor body.

11. The semiconductor device of claim 1 , wherein the second contact is at a first surface of the semiconductor body and is electrically connected to the pn junction diode, the first contact is at a second surface of the semiconductor body opposite to the first surface and forms a Schottky contact metal of the Schottky junction diode.

12. The semiconductor device of claim 11 , further comprising:
a field stop zone between the Schottky contact metal and a part of the semiconductor body, the field stop zone directly adjoining the Schottky contact metal and comprising a doping concentration greater than the part of the semiconductor body.

13. The semiconductor device of claim 12 , wherein the part of the semiconductor body has a doping concentration in the range of 5×10 12 cm −3 and 2×10 14 cm −3 , and wherein a thickness of the part of the semiconductor body between opposite surfaces of the semiconductor body is greater than 50 μm.

14. The semiconductor device of claim 13 , wherein the part of the semiconductor body forms a cathode region of the pn junction diode of the clamping structure.

15. The semiconductor device of claim 14 , further comprising:
an anode region of the pn junction diode directly adjoining a first surface of the semiconductor body, the anode region being electrically connected to the first contact.

16. The semiconductor device of claim 15 , further comprising:
an edge termination structure surrounding the anode region at the first surface.

17. The semiconductor device of claim 16 , wherein the edge termination structure includes one or more of:
field plates, ring structures, junction termination extension structures and variation of lateral doping structures.

18. The semiconductor device of claim 17 , further comprising:
a buried field stop zone located in the semiconductor body at a vertical distance from the field stop zone.

19. The semiconductor device of claim 18 , wherein the buried field stop zone is located at a vertical distance from the anode region.

20. The semiconductor device of claim 18 , wherein the buried field stop zone directly adjoins the anode region.

21. The semiconductor device of claim 1 , further comprising:
a second pn junction diode electrically connected in parallel with the Schottky junction diode.

22. A semiconductor device, comprising:
a semiconductor body comprising a clamping structure including a pn junction diode and a Schottky junction diode serially connected back to back between a first contact and a second contact, wherein a breakdown voltage of the pn junction diode is greater than 100 V and a breakdown voltage of the Schottky junction diode is greater than 10 V,
wherein the second contact is at a first surface of the semiconductor body and is electrically connected to the pn junction diode, the first contact is at a second surface of the semiconductor body opposite to the first surface and forms a Schottky contact metal of the Schottky junction diode.

23. The semiconductor device of claim 22 , further comprising:
a field stop zone between the Schottky contact metal and a part of the semiconductor body, the field stop zone directly adjoining the Schottky contact metal and comprising a doping concentration greater than the part of the semiconductor body.

24. The semiconductor device of claim 23 , wherein the part of the semiconductor body has a doping concentration in the range of 5×10 12 cm −3 and 2×10 14 cm −3 , and wherein a thickness of the part of the semiconductor body between opposite surfaces of the semiconductor body is greater than 50 μm.

25. The semiconductor device of claim 24 , wherein the part of the semiconductor body forms a cathode region of the pn junction diode of the clamping structure.

26. The semiconductor device of claim 25 , further comprising:
an anode region of the pn junction diode directly adjoining a first surface of the semiconductor body, the anode region being electrically connected to the first contact.

27. The semiconductor device of claim 26 , further comprising:
an edge termination structure surrounding the anode region at the first surface.

28. The semiconductor device of claim 27 , wherein the edge termination structure includes one or more of:
field plates, ring structures, junction termination extension structures and variation of lateral doping structures.

29. The semiconductor device of claim 28 , further

Assignees

• Infineon Technologies Austria Ag

Inventors

• Voss Stephan
• Baburske Roman
• Basler Thomas
• Kimmer Thomas
• Schulze Hans-Joachim

Classifications

• H10W90/756

  between a chip and a stacked lead frame, conducting package substrate or heat sink · CPC title

• H10W72/5473

  multiple bond wires connected to a common bond pad · CPC title

• H10W90/00

  Package configurations · CPC title

• H10W70/481 Primary

  for devices being provided for in groups H10D8/00 - H10D48/00 · CPC title

• H10W70/465

  Bumps or wires · CPC title