Slurry, polishing fluid set, polishing fluid, and substrate polishing method using same

Patent metadata

Field	Value
Publication number	US-9982177-B2
Application number	US-201113575078-A
Country	US
Kind code	B2
Filing date	Jan 20, 2011
Priority date	Mar 12, 2010
Publication date	May 29, 2018
Grant date	May 29, 2018

Abstract

A slurry includes abrasive grains and water, wherein the abrasive grains include tetravalent cerium hydroxide particles and produce light transmittance of at least 50%/cm for light with a wavelength of 500 nm in an aqueous dispersion with the content of the abrasive grains adjusted to 1.0 mass %. A polishing liquid includes abrasive grains, an additive and water, wherein the abrasive grains include tetravalent cerium hydroxide particles and produce light transmittance of at least 50%/cm for light with a wavelength of 500 nm in an aqueous dispersion with the content of the abrasive grains adjusted to 1.0 mass %.

First claim

The invention claimed is:

1. A slurry comprising abrasive grains and water,
the abrasive grains including particles comprising a hydroxide of tetravalent cerium, the abrasive grains producing light transmittance of at least 50%/cm for light with a wavelength of 500 nm in an aqueous dispersion with a content of the abrasive grains adjusted to 1.0 mass %.

2. The slurry according to claim 1 , wherein a mean particle size of the abrasive grains is 1-150 nm.

3. The slurry according to claim 1 , wherein a pH is 2.0-9.0.

4. The slurry according to claim 1 , wherein a content of the abrasive grains is 0.01-15 mass % based on a total mass of the slurry.

5. The slurry according to claim 1 , wherein a content of the particles comprising a hydroxide of tetravalent cerium is 0.01-10 mass % based on a total mass of the slurry.

6. The slurry according to claim 1 , wherein the abrasive grains are composed of the particles comprising a hydroxide of tetravalent cerium.

7. A polishing liquid set comprising constituent components of a polishing liquid separately stored as a first liquid and a second liquid, so that the first liquid and second liquid are mixed to form the polishing liquid,
wherein the first liquid is the slurry according to claim 1 , and the second liquid comprises an additive and water.

8. The polishing liquid set according to claim 7 , wherein a mean particle size of the abrasive grains in the polishing liquid is 1-200 nm.

9. The polishing liquid set according to claim 7 , wherein a mean particle size R 1 of the abrasive grains in the first liquid and a mean particle size R 2 of the abrasive grains in the polishing liquid satisfy the following formula (1).
| R 1− R 2|/ R 1×100≤30  (1)

10. The polishing liquid set according to claim 7 , wherein the additive is at least one type selected from among dispersing agents, polishing rate improvers, flattening agents and selective ratio improvers.

11. The polishing liquid set according to claim 7 , wherein the additive is a vinyl alcohol polymer and/or a vinyl alcohol polymer derivative.

12. The polishing liquid set according to claim 7 , wherein a content of the additive in the polishing liquid is 0.01 mass % or greater based on a total mass of the polishing liquid.

13. A polishing liquid comprising abrasive grains, an additive and water,
the abrasive grains including particles comprising a hydroxide of tetravalent cerium, the abrasive grains producing light transmittance of at least 50%/cm for light with a wavelength of 500 nm in an aqueous dispersion with a content of the abrasive grains adjusted to 1.0 mass %.

14. The polishing liquid according to claim 13 , wherein a content of the particles comprising a hydroxide of tetravalent cerium is 0.01-8 mass % based on a total mass of the polishing liquid.

15. The polishing liquid according to claim 13 , wherein a mean particle size of the abrasive grains is 1-200 nm.

16. The polishing liquid according to claim 13 , wherein a pH is 3.0-9.0.

17. The polishing liquid according to claim 13 , wherein the additive is at least one type selected from among dispersing agents, polishing rate improvers, flattening agents and selective ratio improvers.

18. The polishing liquid according to claim 13 , wherein the additive is a vinyl alcohol polymer and/or a vinyl alcohol polymer derivative.

19. The polishing liquid according to claim 13 , wherein a content of the additive is 0.01 mass % or greater based on a total mass of the polishing liquid.

20. A substrate polishing method comprising:
a step of placing a film to be polished, of a substrate which has the film to be polished on its surface, so as to face an abrasive pad, and
a step of polishing at least a portion of the film to be polished while supplying the polishing liquid according to claim 13 between the abrasive pad and the film to be polished.

21. A substrate polishing method comprising:
a step of placing a film to be polished, of a substrate which has the film to be polished on its surface, so as to face an abrasive pad,
a step of mixing the first liquid and second liquid of the polishing liquid set according to claim 7 to obtain the polishing liquid, and
a step of polishing at least a portion of the film to be polished while supplying the polishing liquid between the abrasive pad and the film to be polished.

22. A substrate polishing method comprising:
a step of placing a film to be polished, of a substrate which has the film to be polished on its surface, so as to face an abrasive pad, and
a step of polishing at least a portion of the film to be polished while supplying both the first liquid and second liquid of the polishing liquid set according to claim 7 between the abrasive pad and the film to be polished.

23. A substrate polishing method comprising:
a step of placing a film to be polished, of a substrate which has the film to be polished on its surface, so as to face an abrasive pad, and
a step of polishing at least a portion of the film to be polished while supplying the slurry according to claim 1 between the abrasive pad and the film to be polished.

24. The slurry according to claim 1 , wherein a pH is 3.0-6.0, and a mean particle size of the abrasive grains is 5-120 nm.

25. The polishing liquid according to claim 13 , wherein a pH is 5.0-8.0, and a mean particle size of the abrasive grains is 15-150 nm.

Assignees

• Iwano Tomohiro
• Akimoto Hirotaka
• Narita Takenori
• Kimura Tadahiro
• Ryuzaki Daisuke
• Hitachi Chemical Co Ltd

Inventors

• Iwano Tomohiro
• Akimoto Hirotaka
• Narita Takenori
• Kimura Tadahiro
• Ryuzaki Daisuke

Classifications

• H10P95/062

  involving a dielectric removal step · CPC title

• B24B37/044

  characterised by the composition of the lapping agent · CPC title

• C09K3/1463 Primary

  Aqueous liquid suspensions · CPC title

• C09G1/02

  containing abrasives or grinding agents {(abrasives as such C09K3/14; polishing of semi-conductors H10P52/40)} · CPC title

• H01L21/31053

  Electricity · mapped topic