Method of manufacturing semiconductor device with glass pieces

Patent metadata

Field	Value
Publication number	US-9981844-B2
Application number	US-201213415376-A
Country	US
Kind code	B2
Filing date	Mar 8, 2012
Priority date	Mar 8, 2012
Publication date	May 29, 2018
Grant date	May 29, 2018

Abstract

A source material, which is based on a glass, is arranged on a working surface of a mold substrate. The mold substrate is made of a single-crystalline material. A cavity is formed in the working surface. The source material is pressed against the mold substrate. During pressing a temperature of the source material and a force exerted on the source material are controlled to fluidify source material. The fluidified source material flows into the cavity. Re-solidified source material forms a glass piece with a protrusion extending into the cavity. After re-solidifying, the glass piece may be bonded to the mold substrate. On the glass piece, protrusions and cavities can be formed with slope angles less than 80 degrees, with different slope angles, with different depths and widths of 10 micrometers and more.

First claim

What is claimed is:

1. A method of manufacturing a semiconductor device, the method comprising:
forming a semiconductor element in a mesa portion of a semiconductor substrate,
wherein the semiconductor element is one of a transistor, a diode, a field effect transistor, an IGBT, a logic circuit, a driver circuit, a processor circuit and a memory circuit;

forming a cavity in a working surface of the semiconductor substrate;
bringing the semiconductor substrate in contact with a glass piece made of a glass material and having a protrusion, wherein the glass piece and the semiconductor substrate are arranged such that the protrusion extends into the cavity; and
bonding the glass piece to the semiconductor substrate,
wherein forming the glass piece comprises:
forming a mold substrate of a single-crystalline material by etching a sharp-angled cavity into a working surface of the mold substrate;
bringing a source material based on a glass in contact with the working surface provided with the sharp-angled cavity, wherein the source material is a powder, a glass frit, includes pellets, or is a disk with a flat surface; and
pressing the source material and the mold substrate against each other, wherein if the source material is a disk, the disk is pressed with the flat surface against the working surface of the mold substrate, and wherein a temperature of the source material and a force exerted on the source material are controlled such that source material is fluidified and flows into the sharp-angled cavity,
wherein the sharp angles of the sharp angled cavity are disposed below the working surface.

2. The method according to claim 1 , further comprising providing an adhesive material between the semiconductor substrate and the glass piece before bonding, wherein the glass piece is adhesive bonded to the semiconductor substrate through the adhesive material.

3. The method according to claim 1 , wherein the glass piece is in-situ bonded to the semiconductor substrate by pressing the glass piece against the semiconductor substrate, wherein during the pressing a temperature of the glass piece and a force exerted on the glass piece are controlled to fluidity the glass material.

4. The method according to claim 1 , wherein the cavity in the working surface of the semiconductor substrate has a slope angle between 10 and 80 degrees, and the glass piece comprises a protrusion matching with the protrusion having a slope angle between 10 and 80degrees.

5. The method according to claim 3 , wherein:
the cavity in the working surface of the semiconductor substrate forms a grid, the cavity extending along and within kerf areas, wherein the cavity is wider that the kerf areas;
the glass piece comprises a protrusion forming a grid and matching with the grid formed by the cavity; the method further comprising:
separating, after the bonding, the semiconductor substrate in and along the kerf areas to obtain a plurality of semiconductor dies from the semiconductor substrate, each semiconductor die including a glass frame emerging from the protrusion of the glass piece.

6. The method according to claim 3 , further comprising thinning, after the bonding, the semiconductor substrate from a rear side opposite to a front side defined by the working surface.

Assignees

• Breymesser Alexander
• Brockmeier Andre
• Von Koblinski Carsten
• Santos Rodriguez Francisco Javier
• Infineon Technologies Ag

Inventors

• Breymesser Alexander
• Brockmeier Andre
• Von Koblinski Carsten
• Santos Rodriguez Francisco Javier

Classifications

• H10W74/43

  comprising oxides, nitrides or carbides, e.g. ceramics or glasses · CPC title

• H10W74/134

  the encapsulations being in grooves in the semiconductor body · CPC title

• H10W74/01

  Manufacture or treatment · CPC title

• H10D84/01 Primary

  Manufacture or treatment · CPC title

• G02B2006/12038

  Glass (SiO2 based materials) · CPC title