Power semiconductor module and power conversion device

Patent metadata

Field	Value
Publication number	US-9979314-B2
Application number	US-201314381339-A
Country	US
Kind code	B2
Filing date	Jan 16, 2013
Priority date	Mar 1, 2012
Publication date	May 22, 2018
Grant date	May 22, 2018

Abstract

A power semiconductor module capable of reducing variation of inductance between upper/lower arms and reducing variation of current caused by the variation of inductance. The power semiconductor module includes circuit blocks (upper/lower arms) each of which is configured by connecting self-arc-extinguishing type semiconductor elements in series; a positive electrode terminal, a negative electrode terminal, and an AC terminal that are connected to each of the circuit blocks; and wiring patterns that connect the self-arc-extinguishing type semiconductor elements of the circuit blocks to the positive electrode terminal, the negative electrode terminal, and the AC terminal, wherein the circuit block is plural in number; the positive electrode terminal, the negative electrode terminal, and the AC terminal are each disposed to be plural in number corresponding to the circuit blocks; and the positive electrode terminals and the negative electrode terminals are closely disposed.

First claim

The invention claimed is:

1. A power semiconductor module, comprising:
a first set of an upper arm and a lower arm which includes a positive switching element and a negative switching element which are series-connected to each other, the positive switching element having a plurality of self-arc extinguishing type semiconductor elements parallel-connected to each other, the negative switching element having a plurality of self-arc extinguishing type semiconductor elements parallel-connected to each other;
a second set of an upper arm and a lower arm which includes a positive switching element and a negative switching element which are series-connected to each other, the positive switching element having a plurality of self-arc extinguishing type semiconductor elements parallel-connected to each other, the negative switching element having a plurality of self-arc extinguishing type semiconductor elements parallel-connected to each other, the second set of an upper arm and a lower arm being connected in parallel to the first set of an upper arm and a lower arm;
a first positive electrode side DC terminal connected to the positive switching element of the first set of an upper arm and a lower arm;
a second positive electrode side DC terminal connected to the positive switching element of the second set of an upper arm and a lower arm;
a first negative electrode side DC terminal connected to the negative switching element of the first set of an upper arm and a lower arm;
a second negative electrode side DC terminal connected to the negative switching element of the second set of an upper arm and a lower arm;
a first AC terminal connected to both of the positive switching element and the negative switching element of the first set of an upper arm and a lower arm;
a second AC terminal connected to both of the positive switching element and the negative switching element of the second set of an upper arm and a lower arm;
a first wiring pattern which connects the first set of an upper arm and a lower arm to the first positive electrode side DC terminal, the first negative electrode side DC terminal, and the first AC terminal; and
a second wiring pattern which connects the second set of an upper arm and a lower arm to the second positive electrode side DC terminal, the second negative electrode side DC terminal, and the second AC terminal,
wherein:
the first wiring pattern has a first AC terminal pattern portion which connects the first set of an upper arm and a lower arm to the first AC terminal,
the second wiring pattern has a second AC terminal pattern portion which connects the second set of an upper arm and a lower arm to the second AC terminal,
the first AC terminal pattern portion is electrically connected to the second AC terminal pattern portion within the power semiconductor module, and
the first positive electrode side DC terminal is adjacent to the first negative electrode side DC terminal.

2. The power semiconductor module in claim 1 , wherein:
an outline of the power semiconductor module has a substantially quadrangular surface,
the first and second positive electrode side DC terminals and the first and second negative electrode side DC terminals are disposed at a side of the substantially quadrangular surface, and
the first and second AC terminals are disposed at a side which is opposite to the side.

3. The power semiconductor module in claim 1 , wherein:
an outline of the power semiconductor module has a substantially quadrangular surface, and
the first and second positive electrode side DC terminals, the first and second negative electrode side DC terminals, and the first and second AC terminals are disposed within the substantially quadrangular surface.

4. The power semiconductor module in claim 1 , wherein:
a distance between the first positive electrode side DC terminal and the first negative electrode side DC terminal is shorter than a distance between the first positive electrode side DC terminal and the first AC terminal.

5. The power semiconductor module in claim 1 , wherein:
a distance between the first positive electrode side DC terminal and the first negative electrode side DC terminal is shorter than a distance between the first negative electrode side DC terminal and the first AC terminal.

6. The power semiconductor module in claim 1 , wherein:
the first and second positive electrode side DC terminals, and the first and second negative electrode side DC terminals are disposed in an order of the first positive electrode side DC terminal, the first negative electrode side DC terminal, the second positive electrode side DC terminal, and the second negative electrode side DC terminal.

7. The power semiconductor module in claim 1 , wherein:
the first wiring pattern has a first control wiring pattern portion connected to control electrodes of the self-arc-extinguishing type semiconductor elements of the first set of an upper arm and a lower arm,
the second wiring pattern has a second control wiring pattern portion connected to control electrodes of the self-arc-extinguishing type semiconductor elements of the second set of an upper arm and a lower arm,
the first control wiring pattern portion is connected to a first control terminal for the first set of an upper arm and a lower arm, and
the second control wiring pattern portion is connected to a second control terminal for the second set of an upper arm and a lower arm.

8. The power semiconductor module in claim 1 , wherein:
the first wiring pattern has a first control wiring pattern portion connected to control electrodes of the self-arc-extinguishing type semiconductor elements of the first set of an upper arm and a lower arm,
the second wiring pattern has a second control wiring pattern portion connected to control electrodes of the self-arc-extinguishing type semiconductor elements of the second set of an upper arm and a lower arm,
the first control wiring pattern portion is connected to a first control terminal for the first set of an upper arm and a lower arm, and
the second control wiring pattern portion is electrically connected to the first control wiring pattern portion.

9. The power semiconductor module in claim 1 , wherein:
the first wiring pattern has a first control wiring pattern portion connected to control electrodes of the self-arc-extinguishing type semiconductor elements of the first set of an upper arm and a lower arm,
the second wiring pattern has a second control wiring pattern portion connected to control electrodes of the self-arc-extinguishing type semiconductor elements of the second set of an upper arm and a lower arm, and
a relationship between a direction of gate charge/discharge current, flowing through the control wiring pattern portion, of the self-arc-extinguishing type semiconductor element and a direction of principal current flowing through the self-arc-extinguishing type semiconductor element is unified in the first set of an upper arm and a lower arm and the second set of an upper arm and a lower arm.

10. The power semiconductor module in claim 1 , wherein:
the first AC terminal pattern portion is connected to the second AC terminal pattern portion in the power semiconductor module.

11. The power semiconductor module in claim 1 , wherein:
the first wiring pattern has a first negative electrode terminal pattern portion which connects the first set of an upper arm and a lower arm to the first negative electrode side DC terminal,
the second wiring pattern has a second negative electrode terminal pattern portion which connects the second set of an upper arm and a lower arm to the second negative electrode side DC terminal, and
the first negative el

Assignees

• Mitsubishi Electric Corp

Inventors

• Obiraki Yoshiko
• Nakayama Yasushi
• Miyazaki Yuji
• Nakatake Hiroshi

Classifications

• H02M7/003 Primary

  Constructional details, e.g. physical layout, assembly, wiring or busbar connections · CPC title

• H05K7/2039

  characterised by the heat transfer by conduction from the heat generating element to a dissipating body (arrangements for increasing/decreasing heat-transfer, e.g. fins details, F28F13/00) · CPC title

• H05K5/0065

  wherein modules are associated together, e.g. electromechanical assemblies, modular structures · CPC title

• H02M7/537

  using semiconductor devices only, e.g. single switched pulse inverters · CPC title

• H10W90/754

  between a chip and a stacked insulating package substrate, interposer or RDL · CPC title