Method of manufacturing semiconductor device and glass film forming apparatus

Patent metadata

Field	Value
Publication number	US-9978882-B2
Application number	US-201415108554-A
Country	US
Kind code	B2
Filing date	Nov 13, 2014
Priority date	Nov 13, 2014
Publication date	May 22, 2018
Grant date	May 22, 2018

Abstract

Provided is a method of manufacturing a semiconductor device according to the present invention, a ring-shaped electrode plate 18 with an opening having a diameter smaller than a diameter of a semiconductor wafer W is disposed between a first electrode plate 14 and a second electrode plate 16 , the semiconductor wafer W is arranged between the ring-shaped electrode plate 18 and the second electrode plate 16 , and a glass film is formed on a glass film forming scheduled surface in a state where a potential lower than a potential V 2 of the second electrode plate 16 is applied to the ring-shaped electrode plate 18 . According to the method of manufacturing a semiconductor device of the present invention, even when the glass film forming step is performed using the semiconductor wafer where the base insulating film is formed on the glass film forming scheduled surface as the semiconductor wafer, lowering of deposition efficiency of fine glass particles on the outer peripheral portion of the semiconductor wafer can be suppressed and hence, highly reliable semiconductor devices can be manufactured with high productivity.

First claim

The invention claimed is:

1. A method of manufacturing a semiconductor device comprising:
a semiconductor wafer preparing step of preparing a semiconductor wafer where a base insulating film is formed on a glass film forming scheduled surface; and
a glass film forming step of forming a glass film on the glass film forming scheduled surface by electrophoresis in a state where a first electrode plate and a second electrode plate are disposed so as to opposedly face each other in a tank in which a suspension formed by suspending fine glass particles in a solvent is stored, wherein the first electrode plate and the second electrode plate are immersed in the suspension, the semiconductor wafer is positioned between the first electrode plate and the second electrode plate without contacting the first and second electrode plates, and the glass film forming scheduled surface faces the first electrode plate, wherein
in the glass film forming step, a ring-shaped electrode plate having an opening which has a diameter smaller than a diameter of the semiconductor wafer is positioned between the first electrode plate and the second electrode plate, the semiconductor wafer is positioned between the ring-shaped electrode plate and the second electrode plate, and the glass film is formed on the glass film forming scheduled surface in which the ring-shaped electrode plate is biased to a potential closer to a potential of the first electrode plate than to a potential of the second electrode plate.

2. The method of manufacturing a semiconductor device according to claim 1 , wherein the glass film is formed on the glass film forming scheduled surface in a state where the ring-shaped electrode plate is biased to a potential that is equal to the potential of the first electrode plate.

3. The method of manufacturing a semiconductor device according to claim 1 , wherein the glass film is formed on the glass film forming scheduled surface in a state where a potential between the potential of the first electrode plate and the potential of the second electrode plate is applied to the ring-shaped electrode plate.

4. The method of manufacturing a semiconductor device according to claim 1 , wherein assuming the diameter of the semiconductor wafer as D 1 and the diameter of the opening formed in the ring-shaped electrode plate as D 2 , the diameter D 2 is set to a value which satisfies a relationship D 1 −50 mm≤D 2 ≤D 1 −1 mm.

5. The method of manufacturing a semiconductor device according to claim 4 , wherein an imaginary circle subscribed in the ring-shaped electrode plate has a diameter D 3 which satisfies a relationship D 1 ≤D 3 .

6. The method of manufacturing a semiconductor device according to claim 1 , wherein the semiconductor wafer preparing step includes:
a step of preparing a semiconductor wafer having a pn junction parallel to a main surface thereof;
a step of forming a trench having a depth which goes beyond the pn junction as measured from one surface of the semiconductor wafer and forming a pn junction exposed portion on an inner surface of the trench; and
a step of forming the base insulating film on the inner surface of the trench such that the base insulating film covers the pn junction exposed portion.

7. The method of manufacturing a semiconductor device according to claim 1 , wherein the semiconductor wafer preparing step includes:
a step of forming the pn junction exposed portion on a surface of the semiconductor wafer; and
a step of forming the base insulating film on the surface of the semiconductor wafer such that the base insulating film covers the pn junction exposed portion.

8. The method of manufacturing a semiconductor device according to claim 1 , wherein a film thickness of the base insulating film falls within a range of 5 nm to 60 nm.

9. A glass film forming apparatus for forming a glass film by electrophoresis on a surface of a semiconductor wafer where a base insulating film is formed on a glass film forming scheduled surface, the glass film forming apparatus comprising:
a tank in which a suspension formed by suspending fine glass particles in a solvent is stored;
a first electrode plate and a second electrode plate which are disposed in the tank in a state where the first electrode plate and the second electrode plate opposedly face each other;
a ring-shaped electrode plate which is disposed between the first electrode plate and the second electrode plate, and has an opening having a diameter smaller than a diameter of the semiconductor wafer;
a semiconductor wafer arranging jig for arranging the semiconductor wafer at a predetermined position between the ring-shaped electrode plate and the second electrode plate without contacting the first and second electrode plates; and
a power source device which applies potentials to the first electrode plate, the second electrode plate, and the ring-shaped electrode plate respectively such that a potential applied to the ring-shaped electrode plate is biased more to a potential of the first electrode plate than to a potential of the second electrode plate.

Assignees

• Shindengen Electric Mfg

Inventors

• Nagase Shinichi
• Ogasawara Atsushi
• Ito Koji

Classifications

• H10D8/045

  of PN junction diodes · CPC title

• H10D8/043

  of planar diodes · CPC title

• H10P72/0441

  Apparatus for sealing, encapsulating, glassing, decapsulating or the like · CPC title

• H10P54/00

  Cutting or separating of wafers, substrates or parts of devices · CPC title

• H10P14/6936

  the material containing two or more metal elements · CPC title