Low dishing copper chemical mechanical planarization

Patent metadata

Field	Value
Publication number	US-9978609-B2
Application number	US-201615001846-A
Country	US
Kind code	B2
Filing date	Jan 20, 2016
Priority date	Apr 27, 2015
Publication date	May 22, 2018
Grant date	May 22, 2018

Abstract

Copper chemical mechanical polishing (CMP) formulation, method and system are disclosed. The CMP formulation comprises particulate materials, at least two or more amino acids, oxidizer, corrosion inhibitor, and rest being water.

First claim

The invention claimed is:

1. A copper chemical mechanical polishing (CMP) formulation consisting essentially of:
0.001 to 0.25 wt % particulate materials;
0.01 to 16 wt % at least two amino acids selected from the group consisting of aminoacetic acid (glycine), serine, lysine, glutamine, L-alanine, DL-alanine, Beta-alanine, iminoacetic acid, asparagine, aspartic acid, valine, sarcosine, bicine, tricin, proline, and mixtures thereof;
0.25 to 5 wt % oxidizer;
0.1 ppm to 2 wt % corrosion inhibitor;
water;
and optionally at least one selected from the group consisting of
a surfactant selected from the group consisting of phenyl ethoxylate surfactant, acetylenic diol surfactant, sulfate or sulfonate surfactant, glyceroal propoxylate, glyceroal ethoxylate, non-ionic alkyl ethoxylate surfactant, amine oxide surfactant, glycolic acid ethoxylate oleyl ether, ethoxylated alcohols, and combinations thereof;
pH adjusting agent; and
biocide;
wherein
the particulate material is selected from the group consisting of fumed silica, colloidal silica, fumed alumina, colloidal alumina, cerium oxide, titanium dioxide, zirconium oxide, polystyrene, polymethyl methacrylate, mica, hydrated aluminum silicate, and mixtures thereof; and
weight concentration ratio of one amino acid to another amino acid used in the slurry ranges from 25:75 to 75:25; and
the formulation has a pH from 4 to 9.

2. The chemical mechanical polishing (CMP) formulation of claim 1 , wherein the oxidizer is selected from the group consisting of hydrogen peroxide, ammonium dichromate, ammonium perchlorate, ammonium persulfate, benzoyl peroxide, bromates, calcium hypochlorite, eerie sulfate, chlorates, chromium trioxide, ferric trioxide, ferric chloride, iodates, iodine, magnesium perchlorate, magnesium dioxide, nitrates, periodic acid, permanganic acid, potassium dichromate, potassium ferricyanide, potassium permanganate, potassium persulfate, sodium bismuthate, sodium chlorite, sodium dichromate, sodium nitrite, sodium perborate, sulfates, peracetic acid, urea-hydrogen peroxide, perchloric acid, di-t-butyl peroxide, monopersulfates, dipersulfates, and combinations thereof.

3. The chemical mechanical polishing (CMP) formulation of claim 1 , wherein the corrosion inhibitor is selected from the group consisting of nitrogenous cyclic compound selected from the group consisting of 1,2,3-triazole, 1,2,4 triazole, 1,2,3-benzotriazole, 5-methylbenzotriazole, benzotriazole, 1-hydroxybenzotriazole, 4-hydroxybenzotriazole, 4-amino-4H-1,2,4-triazole, benzimidazole; 5-amino triazole, benzothiazole, triazinethiol, triazinedithiol, and triazinetrithiol; isocyanurate and combinations thereof.

4. The chemical mechanical polishing (CMP) formulation of claim 1 , wherein the particulate material is colloidal silica; the amino acid is selected from the group consisting of aminoacetic acid (glycine), alanine, bicine, and sarcosine; the oxidizer is hydrogen peroxide; the corrosion inhibitor is selected from the group consisting of 1,2,4-triazole and 5-amino triazole; the surfactant is selected from the group consisting of phenyl ethoxylate surfactant, acetylenic diol surfactant, ethoxylate-propoxylate surfactant, polyether dispersion; the water is deionized water; and the pH is from 6 to 8.

5. A method of chemical mechanical polishing a copper containing semiconductor substrate, comprising steps of:
Providing the semiconductor substrate having a surface containing copper;
providing a polishing pad;
providing a chemical mechanical polishing (CMP) formulation consisting essentially of
0.001 to 0.25 wt % particulate materials;
0.01 to 16 wt % at least two amino acids selected from the group consisting of aminoacetic acid (glycine), serine, lysine, glutamine, L-alanine, DL-alanine, Beta-alanine, iminoacetic acid, asparagine, aspartic acid, valine, sarcosine, bicine, tricin, proline, and mixtures thereof;
0.25 to 5 wt % oxidizer,
0.1 ppm to 2 wt % corrosion inhibitor,
water;
and optionally at least one selected from the group consisting of
a surfactant selected from the group consisting of phenyl ethoxylate surfactant, acetylenic diol surfactant, sulfate or sulfonate surfactant, glyceroal propoxylate, glyceroal ethoxylate, non-ionic alkyl ethoxylate surfactant, amine oxide surfactant, glycolic acid ethoxylate oleyl ether, ethoxylated alcohols, and combinations thereof;
pH adjusting agent; and
biocide;
wherein
the particulate material is selected from the group consisting of fumed silica, colloidal silica, fumed alumina, colloidal alumina, cerium oxide, titanium dioxide, zirconium oxide, polystyrene, polymethyl methacrylate, mica, hydrated aluminum silicate, and mixtures thereof;
weight concentration ratio of one amino acid to another amino acid used in the slurry ranges from 25:75 to 75:25; and
the formulation has a pH from 4 to 9;

contacting the surface of the semiconductor substrate with the polishing pad and the chemical mechanical polishing formulation; and
polishing the surface of the semiconductor;
wherein at least a portion of the surface containing copper is in contact with both the polishing pad and the chemical mechanical polishing formulation.

6. The method of claim 5 , wherein the oxidizer is selected from the group consisting of hydrogen peroxide, ammonium dichromate, ammonium perchlorate, ammonium persulfate, benzoyl peroxide, bromates, calcium hypochlorite, ceric sulfate, chlorates, chromium trioxide, ferric trioxide, ferric chloride, iodates, iodine, magnesium perchlorate, magnesium dioxide, nitrates, periodic acid, permanganic acid, potassium dichromate, potassium ferricyanide, potassium permanganate, potassium persulfate, sodium bismuthate, sodium chlorite, sodium dichromate, sodium nitrite, sodium perborate, sulfates, peracetic acid, urea-hydrogen peroxide, perchloric acid, di-t-butyl peroxide, monopersulfates, dipersulfates, and combinations thereof.

7. The method of claim 5 , wherein the corrosion inhibitor is selected from the group consisting of nitrogenous cyclic compound selected from the group consisting of 1,2,3-triazole, 1,2,4 triazole, 1,2,3-benzotriazole, 5-methylbenzotriazole, benzotriazole, 1-hydroxybenzotriazole, 4-hydroxybenzotriazole, 4-amino-4H-1,2,4-triazole, benzimidazole; benzothiazole, 5-amino triazole, triazinethiol, triazinedithiol, and triazinetrithiol; isocyanurate and combinations thereof.

8. The method of claim 5 , wherein the particulate material is colloidal silica; the amino acid is selected from the group consisting of aminoacetic acid (glycine), alanine, bicine, and sarcosine; the oxidizer is hydrogen peroxide; the corrosion inhibitor is selected from the group consisting of 1,2,4-triazole and 5-amino triazole; the surfactant is selected from the group consisting of phenyl ethoxylate surfactant, acetylenic diol surfactant, ethoxylate-propoxylate surfactant, polyether dispersion; the water is deionized water; and the pH is from 6 to 8.

9. A system of chemical mechanical polishing, comprising
a semiconductor substrate having a surface containing copper;
providing a polishing pad;
providing a chemical mechanical polishing (CMP) formulation consisting essentially of
0.001 to 0.25 wt % particulate materials;
0.01 to 16 wt % at least two amino acids selected from the group consisting of aminoacetic acid (glycine), serine, lysine, glutamine, L-alanine, DL-alanine, Beta-alanine, iminoacetic acid, asparagine, aspartic acid, valine, sarcosine, bicine, tricin, proline, and mixtures thereof;
0.25 to 5 wt % oxidizer;
0.1 ppm to 2 wt % corrosion inhibitor;
water;
and optionally at least one selected from the group consisting of
a surfactant selected from the group consisting of phenyl ethoxylate surfactant, acetylenic diol surfactant

Assignees

• Air Prod & Chem
• Versum Mat Us Llc

Inventors

• Shi Xiaobo
• Schlueter James Allen
• Rose Joseph
• O'Neill Mark Leonard
• Grief Malcolm

Classifications

• H10W20/031

  of conductive parts of the interconnections · CPC title

• H10W20/062

  by smoothing of conductive parts, e.g. by planarisation · CPC title

• H10P52/403 Primary

  of conductive or resistive materials · CPC title

• H10P52/00

  Grinding, lapping or polishing of wafers, substrates or parts of devices · CPC title

• C23F3/04

  Heavy metals · CPC title