Method for manufacturing a microelectromechanical structure and microelectromechanical structure
US-11975964-B2 · May 7, 2024 · US
Micromechanical sensor apparatus with a movable gate, and corresponding production process
US8975669B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-8975669-B2 |
| Application number | US-201313774052-A |
| Country | US |
| Kind code | B2 |
| Filing date | Feb 22, 2013 |
| Priority date | Feb 23, 2012 |
| Publication date | Mar 10, 2015 |
| Grant date | Mar 10, 2015 |
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Abstract
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A micromechanical sensor apparatus has a movable gate and a field effect transistor. The field effect transistor has a drain region, a source region, an intermediate channel region with a first doping type, and a movable gate which is separated from the channel region by an intermediate space. The drain region, the source region, and the channel region are arranged in a substrate. A guard region is provided in the substrate at least on the longitudinal sides of the channel region and has a second doping type which is the same as the first doping type and has a higher doping concentration.
First claim
Opening claim text (preview).
What is claimed is: 1. A process for producing a micromechanical sensor apparatus with a movable gate, the process comprising: forming a field effect transistor with a drain region, a source region, an intermediate channel region with a first doping type, and a movable gate which is separated from the channel region by an intermediate space, wherein the drain region, the source region and the channel region are arranged in a substrate; and producing a guard region in the substra…
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Operations & Transport · mapped topic
Operations & Transport · mapped topic
- B81B3/0086Primary
Operations & Transport · mapped topic
Operations & Transport · mapped topic
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- What does patent US8975669B2 cover?
- A micromechanical sensor apparatus has a movable gate and a field effect transistor. The field effect transistor has a drain region, a source region, an intermediate channel region with a first doping type, and a movable gate which is separated from the channel region by an intermediate space. The drain region, the source region, and the channel region are arranged in a substrate. A guard regio…
- Who is the assignee on this patent?
- Bosch Gmbh Robert
- What technology area does this patent fall under?
- Primary CPC classification B81B3/0086. Mapped technology areas include Operations & Transport.
- When was this patent published?
- Publication date Tue Mar 10 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).