Method for producing nitride single crystal

Patent metadata

Field	Value
Publication number	US-9976229-B2
Application number	US-201414500516-A
Country	US
Kind code	B2
Filing date	Sep 29, 2014
Priority date	Mar 29, 2012
Publication date	May 22, 2018
Grant date	May 22, 2018

Abstract

A first object of the present invention is to provide a method for efficiently growing a nitride single crystal even under low pressure conditions. The present invention relates to a method for producing a nitride single crystal, comprising growing a nitride crystal on the surface of a seed crystal having a hexagonal crystal structure by setting a pressure in a reaction vessel having the seed crystal, a nitrogen-containing solvent, a mineralizer containing a fluorine atom, and a raw material placed therein to 5 to 200 MPa and performing control so that the nitrogen-containing solvent is in at least either a supercritical state or a subcritical state.

First claim

The invention claimed is:

1. A method for producing a nitride single crystal, the method comprising:
growing a nitride crystal on the surface of a seed crystal having a hexagonal crystal structure in a reaction vessel comprising. therein the seed crystal, a nitrogen-containing solvent, a mineralizer comprising a fluorine atom, and a raw material, at a pressure in the reaction vessel of 5 to 177 MPa with the nitrogen-containing solvent in at least one of a supercritical state and a subcritical state,
wherein in the reaction vessel, the temperature of a region where the raw material is dissolved is lower than the temperature of a region where the nitride crystal is grown on the surface of the seed crystal, and
wherein one or both of the following conditions apply:
a) the pressure in the reaction vessel is 10 to 156 MPa;
b) the temperature of the region where the raw material is dissolved is lower than the temperature of the region where the nitride crystal is grown on the surface of the seed crystal by 30° C. - 150° C.

2. The method for producing a nitride single crystal according to claim 1 , wherein the pressure in the reaction vessel is 10 to 156 MPa.

3. The method for producing a nitride single crystal according to claim 1 , wherein the temperature of the region where the raw material is dissolved is lower than the temperature of the region where the nitride crystal is grown on the surface of the seed crystal by 30° C.-150° C.

4. The method for producing a nitride single crystal according to claim 1 , wherein the reaction vessel further comprises a mineralizer comprising a halogen atom other than a fluorine atom, and wherein the fluorine atom accounts for at least 50% by mole of a total amount of all the halogen atoms in all the mineralizers.

5. The method for producing a nitride single crystal according to claim 1 , wherein the pressure in the reaction vessel and the concentration of the fluorine atom the mineralizer with respect to the nitrogen-containing solvent satisfy the following formula:
0.4 ≤P ×M ≤ 3.0
wherein P represents the pressure [unit: MPa] in the reaction vessel and M represents the concentration [unit: mole/mole of solvent] of the fluorine atom contained in the mineralizer with respect to the nitrogen-containing solvent.

6. The method for producing a nitride single crystal according to claim 1 , wherein a temperature at which the nitride crystal is grown on the surface of the seed crystal is 650° C. or lower.

7. The method for producing a nitride single crystal according to claim 1 , wherein the reaction vessel comprises a metal containing a Ni-based alloy having a Ni content exceeding 40% by mass.

8. The method for producing a nitride single crystal according to claim 1 , comprising controlling the nitrogen-containing solvent to be in a. supercritical state.

9. The method for producing a nitride single crystal according to claim 1 , comprising controlling the nitrogen-containing solvent to be in a. subcritical state.

10. The method for producing a nitride single crystal according to claim 1 , comprising controlling the nitrogen-containing solvent to be in a supercritical state and a subcritical state.

11. The method for producing a nitride single crystal according to claim 1 , wherein the nitride crystal is a GaN crystal, the seed crystal is a GaN single crystal, and the raw material comprises GaN.

12. The method for producing a nitride single crystal according to claim 1 . wherein the mineralizer comprises at least one selected from ammonium fluoride, hydrogen fluoride, hydrocarbyl ammonium fluoride, alkyl ammonium fluoride, alkyl metal fluoride, alkali fluoride, alkaline earth metal fluoride and metal fluoride.

13. The method for producing a nitride single crystal according to claim 1 , wherein the mineralizer comprises at least one selected from ammonium fluoride and gallium fluoride.

14. The method for producing a nitride single crystal according to claim 1 , wherein the nitrogen-containing solvent comprises ammonia.

15. The method for producing a nitride single crystal according to claim 1 , wherein a molar concentration of the fluorine atom contained in the mineralizer with respect to the nitrogen-containing solvent is 0.2%-30% by mole.

16. The method for producing a nitride single crystal according to claim 1 , wherein a molar concentration of the fluorine atom contained in the mineralizer with respect to the nitrogen-containing solvent is 1.0 %-2.0% by mole.

17. The method for producing a nitride single crystal according to claim 1 , wherein the reaction vessel is an autoclave.

18. The method for producing a nitride single crystal according to claim 17 , wherein the reaction vessel is a platinum-lined autoclave.

19. The method for producing a nitride single crystal according to claim 1 , wherein the crystal produced by said method has an intensity ratio (YB/NBE) of the yellow band emission (YB) observed at a luminescence wavelength of 500 to 600 nm to the band edge emission (NBE) of 10 or less.

20. The method for producing a nitride single crystal according to claim 19 , wherein the intensity ratio (YB/NBE) is 0.8 or less.

21. 1 The method for producing a nitride single crystal according to claim 1 , wherein the pressure in the reaction vessel is 10 to 156 MPa and the temperature of the region where the raw material is dissolved is lower than the temperature of the region where the nitride crystal is grown on the surface of the seed crystal by 30° C.-150° C.

Assignees

• Mitsubishi Chem Corp
• Univ Tohoku
• Japan Steel Works Ltd

Inventors

• Ishiguro Tohru
• Bao Quanxi
• Yokoyama Chiaki
• Tomida Daisuke
• Chichibu Shigefusa
• Kayano Rinzo
• Ueda Mutsuo
• Saito Makoto
• Kagamitani Yuji

Classifications

• C30B7/105 Primary

  using ammonia as solvent, i.e. ammonothermal processes · CPC title

• C30B29/406

  Gallium nitride · CPC title

• C30B7/14

  the crystallising materials being formed by chemical reactions in the solution · CPC title

• C30B29/403

  AIII-nitrides · CPC title