Film deposition material, sealing film using the same and use thereof

Patent metadata

Field	Value
Publication number	US-9970103-B2
Application number	US-201615212895-A
Country	US
Kind code	B2
Filing date	Jul 18, 2016
Priority date	Sep 5, 2011
Publication date	May 15, 2018
Grant date	May 15, 2018

Abstract

The present invention relates to a film composed of a carbon-containing silicon oxide formed by CVD using, as the raw material, an organosilicon compound having a secondary hydrocarbon group directly bonded to at least one silicon atom and having an atomic ratio of 0.5 or less oxygen atom with respect to 1 silicon atom, which is used as a sealing film for a gas barrier equipment and materials, an FPD device, a semiconductor device and the like.

First claim

The invention claimed is:

1. A method for producing a gas barrier sealing film, which comprises:
supplying oxygen and forming a gas barrier sealing film on a plastic substrate by a plasma enhanced chemical vapor deposition performed at 1.0 to 10,000 W using an organosilicon compound having a secondary hydrocarbon group directly bonded to at least one silicon atom and having an atomic ratio of 0.5 or less oxygen atom with respect to 1 silicon atom, the organosilicon compound being represented by the following formula (2):

wherein each of R 5 and R 6 represents a hydrocarbon group having a carbon number of 1 to 20, R 5 and R 6 may bond with each other to form a cyclic structure; R 7 represents a branched saturated hydrocarbon group having a carbon number of 1 to 20; R 8 represents a linear saturated hydrocarbon group having a carbon number of 1 to 20, and m represents an integer of 1 to 20,
wherein flow rate of oxygen is the same as or more than flow rate of the organosilicon compound and the gas barrier sealing film has a water permeability of 3.5×10 −3 g/m 2 ·day or less.

2. The method for producing a gas barrier sealing film according to claim 1 , wherein the organosilicon compound represented by the formula (2) is diisopropylmethylsilane, sec-butyldimethylsilane or di-sec-butylmethylsilane.

3. The method for producing a gas barrier sealing film according to claim 1 , wherein the organosilicon compound represented by the formula (2) is diisopropylmethylsilane.

4. The method for producing a gas barrier sealing film according to claim 2 , wherein the organosilicon compound represented by the formula (2) is diisopropylmethylsilane.

5. The method for producing a gas barrier sealing film according to claim 1 , wherein flow rate of oxygen is 1 to 10 times flow rate of the organosilicon compound.

6. The method for producing a gas barrier sealing film according to claim 2 , wherein flow rate of oxygen is 1 to 10 times flow rate of the organosilicon compound.

7. The method for producing a gas barrier sealing film according to claim 3 , wherein flow rate of oxygen is 1 to 10 times flow rate of the organosilicon compound.

8. The method for producing a gas barrier sealing film according to claim 4 , wherein flow rate of oxygen is 1 to 10 times flow rate of the organosilicon compound.

Assignees

• Hara Daiji
• Shimizu Masato
• Tosoh Corp

Inventors

• Hara Daiji
• Shimizu Masato

Classifications

• H10P14/6922

  the material containing Si, O and at least one of H, N, C, F or other non-metal elements, e.g. SiOC, SiOC:H or SiONC · CPC title

• H10P14/6686

  the compound being a molecule comprising at least one silicon-oxygen bond and the compound having hydrogen or an organic group attached to the silicon or oxygen, e.g. a siloxane · CPC title

• H10P14/6682

  the compound being a silane, e.g. disilane, methylsilane or chlorosilane · CPC title

• H10P14/6336

  in the presence of a plasma [PECVD] · CPC title

• C23C16/50

  using electric discharges {(generation and control of plasma in discharge tubes for surface treatment H01J37/32, H01J37/34)} · CPC title