Ion assisted deposition top coat of rare-earth oxide

US9970095B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-9970095-B2
Application numberUS-201615211921-A
CountryUS
Kind codeB2
Filing dateJul 15, 2016
Priority dateApr 25, 2014
Publication dateMay 15, 2018
Grant dateMay 15, 2018

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  1. Title

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  2. Abstract

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  3. Assignees and inventors

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  4. Key dates

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  5. First independent claim

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  6. CPC / IPC classifications

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  7. Citations and related patents

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Abstract

Official abstract text for this publication.

A method of manufacturing an article comprises providing an article. An ion assisted deposition (IAD) process is performed to deposit a second protective layer over a first protective layer. The second protective layer is a plasma resistant rare earth oxide having a thickness of less than 50 microns and a porosity of less than 1%. The second protective layer seals a plurality of cracks and pores of the first protective layer.

First claim

Opening claim text (preview).

What is claimed is: 1. A method comprising: performing an ion assisted deposition (IAD) process at a first deposition rate of 0.25-1.0 Angstroms per second to deposit a bottom portion of a second protective layer on at least a region of a first protective layer that is on a surface of an article, wherein the first deposition rate achieves improved conformance and better adherence of the second protective layer to the first protective layer than a higher deposition rate; and continuing the IAD process at a second deposition rate of 2-10 Angstroms per second to deposit a top portion of the second protective layer on the bottom portion of the second protective layer to reduce process time and cost for the IAD process as compared to continuing the IAD process at the first deposition rate; wherein the first protective layer consists of Er 3 Al 5 O 12 and has an amorphous structure, and wherein the second protective layer consists of Er 2 O 3 and has a crystalline or nano-crystalline structure, wherein the second protective layer has a thickness of less than or approximately 50 microns and seals a plurality of cracks and pores of the first protective layer. 2. The method of claim 1 , further comprising: cooling the article during deposition of the second protective layer to maintain the article at a temperature of below approximately 150° C. 3. The method of claim 1 , wherein the article is a chamber liner of an etch reactor, the chamber liner having a hollow cylindrical shape comprising an inner wall and an outer wall, and wherein performing IAD to deposit the second protective layer comprises: positioning a target at a first opening of the article; coating a first portion of the inner wall of the article; subsequently positioning the target at a second opening of the article; and coating a second portion of the inner wall of the article. 4. The method of claim 1 , further comprising performing the following prior to depositing the second protective layer: identifying one or more regions of the article that will exhibit a high erosion rate due to exposure to plasma relative to other regions of the article; and masking the article with a mask so that the mask leaves the identified one or more regions of the article exposed during the IAD, wherein the second protective layer is deposited on the identified one or more regions of the article. 5. The method of claim 1 , wherein performing the IAD comprises: setting a working distance between a target material and the article to less than 1 meter. 6. The method of claim 1 , further comprising: performing a plasma spraying process to deposit the first protective layer on the surface of the article, wherein the first protective layer has a thickness of greater than or approximately 50 microns. 7. The method of claim 6 , wherein a surface roughness of the first protective layer is 0.5-180 micro-inches. 8. The method of claim 1 , further comprising: performing IAD to deposit a third protective layer on the second protective layer, wherein the third protective layer has a thickness of less than or approximately 50 microns and comprises an oxide selected from the group consisting of: Y 3 Al 5 O 12 , Y 4 Al 2 O 9 , Er 2 O 3 , Gd 2 O 3 , Er 3 Al 5 O 12 , Gd 3 Al 5 O 12 and a ceramic compound comprising Y 4 Al 2 O 9 and a solid-solution of Y 2 O 3 —ZrO 2 . 9. The method of claim 1 , further comprising: using oxygen ions to burn organic surface contamination from the first protective layer and disperse surface particles on the first protective layer prior to performing the IAD. 10. The method of claim 1 , wherein the IAD is performed without first roughening the first protective layer. 11. The method of claim 1 , wherein the second protective layer has a thickness of 0.5-7.0 microns. 12. The method of claim 1 , further comprising: performing IAD to deposit the first protective layer prior to depositing the bottom portion of the second layer. 13. A method comprising: performing an ion assisted deposition (IAD) process at a first deposition rate of 0.25-1.0 Angstroms per second to deposit a bottom portion of a first protective layer on a surface of an article, wherein the first deposition rate achieves improved conformance and better adherence of the first protective layer to the surface of the article than a higher deposition rate; continuing the IAD process at a second deposition rate of 2-10 Angstroms per second to deposit a top portion of the first protective layer on the bottom portion of the first protective layer to reduce process time and cost for the IAD process as compared to continuing the IAD process at the first deposition rate, wherein the first protective layer consists of Er 3 Al 5 O 12 and has an amorphous structure; and performing IAD to deposit a second protective layer on the first protective layer, wherein the second protective layer consists of Er 2 O 3 , has a crystalline or nano-crystalline structure, and has a thickness of less than or approximately 50 microns. 14. The method of claim 13 , further comprising: performing IAD to deposit a third protective layer on the second protective layer, wherein the third protective layer consists of Er 3 Al 5 O 12 and has an amorphous structure; and performing IAD to deposit a fourth protective layer on the third protective layer, wherein the fourth protective layer consists of Er 2 O 3 and has a crystalline or nano-crystalline structure. 15. A method comprising: performing ion assisted deposition (IAD) process at a first deposition rate of 0.25-1.0 Angstroms per second to deposit a bottom portion of a second protective layer on at least a region of a first protective layer that is on a surface of an article, wherein the first deposition rate achieves improved conformance and better adherence of the second protective layer to the first protective layer than a higher deposition rate; and continuing the IAD process at a second deposition rate of 2-10 Angstroms per second to deposit a top portion of the second protective layer on the bottom portion of the second protective layer to reduce process time and cost for the IAD process as compared to continuing the IAD process at the first deposition rate, wherein the second protective layer consists of Er 3 Al 5 O 12 , has an amorphous structure, has a thickness of less than or approximately 50 microns and seals a plurality of cracks and pores of the first protective layer; and performing IAD to deposit a third protective layer on the second protective layer, wherein the third protective layer consists of Er 2 O 3 , has a crystalline or nano-crystalline structure and has a thickness of less than or approximately 50 microns. 16. The method of claim 15 , further comprising: performing a plasma spraying process to deposit the first protective layer on the surface of the article, wherein the first protective layer has a thickness of greater than or approximately 50 microns. 17. The method of claim 15 , further comprising: using oxygen ions to burn organic surface contamination from the first protective layer and disperse surface particles on the first protective layer prior to performing the IAD. 18. The method of claim 15 , wherein the second protective layer has a thickness of 0.5-7.0 microns.

Assignees

Inventors

Classifications

  • including components having same physical characteristic in differing degree · CPC title

  • on metal layer · CPC title

  • C23C14/221Primary

    Ion beam deposition (C23C14/46, C23C14/48 take precedence) · CPC title

  • characterised by the means for protecting vessels or internal parts, e.g. coatings · CPC title

  • Inorganic coating · CPC title

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What does patent US9970095B2 cover?
A method of manufacturing an article comprises providing an article. An ion assisted deposition (IAD) process is performed to deposit a second protective layer over a first protective layer. The second protective layer is a plasma resistant rare earth oxide having a thickness of less than 50 microns and a porosity of less than 1%. The second protective layer seals a plurality of cracks and pore…
Who is the assignee on this patent?
Applied Materials Inc
What technology area does this patent fall under?
Primary CPC classification C23C14/221. Mapped technology areas include Chemistry & Metallurgy.
When was this patent published?
Publication date Tue May 15 2018 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 12 related publications on this page (citations in our corpus or others sharing the same primary CPC).