Semiconductor light-receiving device and semiconductor light-receiving device array
US-2015364618-A1 · Dec 17, 2015 · US
US9966482B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9966482-B2 |
| Application number | US-201214353207-A |
| Country | US |
| Kind code | B2 |
| Filing date | Jun 15, 2012 |
| Priority date | Oct 19, 2011 |
| Publication date | May 8, 2018 |
| Grant date | May 8, 2018 |
A practical reading order for non-experts. Skip the full description unless you need deep technical detail.
What the patent document calls the invention.
A short plain-language summary of the technical disclosure.
Who owns or filed the patent and who is credited as inventor.
Filing, priority, publication, and grant dates set the timeline.
The legal scope of protection — read this for what is actually claimed.
Technology tags used to group this patent with similar filings.
Prior art links and similar publications in this corpus.
Official abstract text for this publication.
A solar cell module according to the embodiment includes a back electrode layer formed on a top surface of a support substrate and including a first groove; a light absorbing layer formed on the back electrode layer and including a third groove; a front electrode layer formed on the light absorbing layer and including the third groove; and a wavelength conversion material formed in at least one of the first and third grooves.
Opening claim text (preview).
The invention claimed is: 1. A solar cell module comprising: a support substrate; a plurality of solar cells disposed on a top surface of the support substrate; and a wavelength conversion material, wherein each solar cell of the plurality of solar cells comprises: a back electrode layer on a top surface of the support substrate; a first groove extending through the back electrode layer; a light absorbing layer on the back electrode layer; and a front electrode layer on the light absorbing layer; wherein each first groove has a first edge and a second edge opposed to the first edge, wherein each first edge and each second edge directly contact the back, electrode layer, wherein each of the solar cells of the plurality of solar cells is separated from each other by a third groove, wherein each first groove and each third groove is formed in a non-active area, wherein the plurality of solar cells includes a first solar cell, a second solar cell, and a third solar cell; wherein the second solar cell is disposed between the first solar cell and the third solar cell, wherein the first groove of the first solar cell, the first groove of the third solar cell, and each of the third grooves are filled with the wavelength conversion material; wherein the first groove of the second solar cell is filled with the light absorbing layer, wherein the wavelength conversion material is further directly disposed on a bottom surface of the support substrate only at a portion aligned with the first groove of the second solar cell, wherein the wavelength conversion material that is directly disposed on the bottom surface of the support substrate has a third edge and a fourth edge opposed to the third edge, and wherein the third edge is aligned with the first edge of the first groove of the second solar cell, and the fourth edge is aligned with the second edge of the first groove of the second solar cell. 2. The solar cell module of claim 1 , wherein the wavelength conversion material includes a rare-earth oxide phosphor. 3. The solar cell module of claim 2 , wherein the rare-earth oxide phosphor comprises: a rare-earth oxide including Y, Dy, Sm, Gd, La, Ho, Eu, Tm, Er, Ce, Tb, Pr, Yb, Nd, or Lu; and a rare-earth metal doped in the rare-earth oxide. 4. The solar cell module of claim 3 , wherein the rare-earth oxide phosphor is expressed as following chemical formula of Y 2 O 3 :Eu. 5. The solar cell module of claim 1 , wherein the wavelength conversion material includes a meta-material. 6. The solar cell module of claim 1 , wherein the wavelength conversion material receives a first light having a first wavelength exceeding 1200 nm and outputs a second light having a second wavelength in a range of from 500 nm to 1200 nm. 7. The solar cell module of claim 1 , wherein the wavelength conversion material converts a light route. 8. The solar cell module of claim 1 , wherein the light absorbing layer further includes a second groove. 9. The solar cell module of claim 1 , wherein the light absorbing layer has a CIGSS (Cu(In,Ga)(Se,S) 2 ) crystal structure, a CISS (Cu(In)(Se,S) 2 ) crystal structure, or a CUSS (Cu(Ga)(Se,S) 2 ) crystal structure.
Electricity · mapped topic
PV systems with concentrators · CPC title
Electricity · mapped topic
Oxides (C09K11/7768 takes precedence) · CPC title
Electricity · mapped topic
Related publications grouped by family.
Answers are generated from the same data shown on this page.