Semiconductor light emitting device having a fluorescent substance layer

Patent metadata

Field	Value
Publication number	US-9202992-B2
Application number	US-201414338684-A
Country	US
Kind code	B2
Filing date	Jul 23, 2014
Priority date	Mar 11, 2014
Publication date	Dec 1, 2015
Grant date	Dec 1, 2015

Abstract

A semiconductor light emitting device includes a semiconductor layer, a p-side and an n-side interconnect portions, a fluorescent substance layer and a transparent layer. The semiconductor layer has a first major surface, a second major surface, and a first side surface, the semiconductor layer including a light emitting layer. The p-side and n-side interconnect portions are electrically connected to the semiconductor layer. The fluorescent substance layer is provided on the first major surface side. The transparent layer is provided between the semiconductor layer and the fluorescent substance layer, and has a second side surface. The device further includes an insulating film covering the first side surface and the second side surface, and a reflecting member covering the first side surface and the second side surface via the insulating film.

First claim

What is claimed is:

1. A semiconductor light emitting device comprising:
a semiconductor layer having a first major surface, a second major surface on a side opposite to the first major surface, and a first side surface being in contact with the first major surface and the second major surface, the semiconductor layer including a light emitting layer;
a p-side interconnect portion electrically connected to the semiconductor layer on the second major surface side;
an n-side interconnect portion electrically connected to the semiconductor layer on the second major surface side;
a fluorescent substance layer provided on the first major surface side, and including a fluorescent substance radiating light different in a wavelength from light emitted from the light emitting layer;
a transparent layer provided between the semiconductor layer and the fluorescent substance layer, and having a third major surface on the semiconductor layer side, a fourth major surface on the fluorescent substance layer side, and a second side surface being in contact with the third major surface, the transparent layer transmitting the light emitted from the light emitting layer;
an insulating film covering the first side surface and the second side surface; and
a reflecting member covering the first side surface and the second side surface via the insulating film.

2. The device according to claim 1 ,
wherein the second side surface is recessed toward an inner side from an outer edge of the fluorescent substance layer;
the insulating film covers an outer peripheral portion of the fluorescent substance on the transparent layer side of the fluorescent substance layer; and
the reflecting member extends along the insulating film between the outer edge of the fluorescent substance layer and the second side surface.

3. The device according to claim 2 , wherein the reflecting member extends to the outer edge of the fluorescent substance layer.

4. The device according to claim 1 ,
wherein the transparent layer has a third side surface being in contact with the fourth major surface; and
the third side surface locates between the second side surface and an outer edge of the fluorescent substance layer.

5. The device according to claim 4 , wherein the insulating film covers the third side surface.

6. The device according to claim 1 , further comprising a resin layer covering the first side surface, the second side surface, and an outer peripheral portion of the fluorescent substance.

7. The device according to claim 6 , wherein the resin layer includes a member reflecting the light emitted from the light emitting layer.

8. The device according to claim 6 , wherein the reflecting member is provided between the insulating film and the resin layer.

9. The device according to claim 6 , wherein the insulating layer is provided between the fluorescent substance layer and the resin layer in the outer peripheral portion of the fluorescent substance layer.

10. The device according to claim 6 , further comprising another insulating film between the transparent layer and the fluorescent substance layer, the another insulating film being made of inorganic material,
wherein the another insulating film has a portion provided between the fluorescent substance layer and the resin layer in the outer peripheral portion of the fluorescent substance layer.

11. The device according to claim 6 ,
wherein the resin layer further covers the second major surface side of the semiconductor layer; and
each of the p-side interconnect portion and the n-side interconnect portion has an end face exposed in a surface of the resin layer opposite to the semiconductor layer.

12. The device according to claim 1 , wherein the transparent layer has an extension portion extending in a direction from the second side surface to an outer edge of the fluorescent substance layer.

13. The device according to claim 12 ,
wherein the extension portion of the transparent layer reaches the outer edge of the fluorescent substance layer; and
an outer edge of the extension portion is coincident with the outer edge of the fluorescent substance layer.

14. The device according to claim 12 , wherein the insulating film covers the extension portion.

15. The device according to claim 12 , wherein the reflecting member covers at least a portion of the extension portion on a side opposite to the fluorescent substance layer.

16. The device according to claim 1 , wherein the transparent layer is provided in a shape where the transparent layer becomes thicker as approaching the second side surface.

17. The device according to claim 1 , wherein at least a portion of the reflecting member is a resin including a reflecting material which reflects the light emitted from the light emitting layer.

18. The device according to claim 1 , wherein a cross sectional area of the semiconductor layer parallel to the first major surface becomes larger as approaching the first major surface.

19. The device according to claim 18 , wherein a cross sectional area of the transparent layer parallel to the third major surface becomes larger as approaching toward the fluorescent substance layer.

20. The device according to claim 1 , further comprising:
a first electrode in contact with the semiconductor layer; and
a second electrode in contact with the semiconductor layer,
wherein the semiconductor layer includes an emitting region and an non-emitting region; and
the first electrode is in contact with the emitting region, and the second electrode is in contact with the non-emitting region,
wherein the p-side interconnect portion is electrically connected to one of the first electrode and the second electrode; and
the n-side interconnect portion is electrically connected to the other of the first electrode and the second electrode,
wherein the reflecting member covers at least part of the first electrode or the second electrode.

Assignees

• Toshiba Kk

Inventors

• Tomizawa Hideyuki
• Kojima Akihiro
• Shimada Miyoko
• Akimoto Yosuke
• Furuyama Hideto
• Sugizaki Yoshiaki

Classifications

• H10H20/8512

  Wavelength conversion materials · CPC title

• H10H20/84 Primary

  Coatings, e.g. passivation layers or antireflective coatings · CPC title

• H10H20/8511

  characterised by their material, e.g. binder · CPC title

• H10H20/857

  Interconnections, e.g. lead-frames, bond wires or solder balls · CPC title

• H10H20/856

  Reflecting means · CPC title