Inhibitor plasma mediated atomic layer deposition for seamless feature fill

Patent metadata

Field	Value
Publication number	US-9966299-B2
Application number	US-201615213750-A
Country	US
Kind code	B2
Filing date	Jul 19, 2016
Priority date	Feb 26, 2014
Publication date	May 8, 2018
Grant date	May 8, 2018

Abstract

Systems and methods for depositing film in a substrate processing system includes performing a first atomic layer deposition (ALD) cycle in a processing chamber to deposit film on a substrate including a feature; after the first ALD cycle, exposing the substrate to an inhibitor plasma in the processing chamber for a predetermined period to create a varying passivated surface in the feature; and after the predetermined period, performing a second ALD cycle in the processing chamber to deposit film on the substrate.

First claim

What is claimed is:

1. A substrate processing system for depositing film, comprising:
a processing chamber including a pedestal configured to support a substrate including a feature;
a gas source configured to selectively supply atomic layer deposition (ALD) process gas to the processing chamber via at least one gas line and to selectively supply inhibitor gas to the processing chamber;
a plasma generator configured to selectively generate inhibitor plasma in the processing chamber; and
a controller configured to control (i) an output of the gas source via at least one valve, and (ii) the plasma generator, wherein the controller is further configured to:
perform a first ALD cycle in the processing chamber to deposit film on the substrate;
after the first ALD cycle, expose the substrate in the processing chamber to the inhibitor plasma generated using the inhibitor gas to create a varying passivated surface in the feature; and
after creating the varying passivated surface in the feature, perform a second ALD cycle in the processing chamber to deposit film on the substrate.

2. The substrate processing system of claim 1 , wherein the controller is configured to expose the substrate to the inhibitor plasma prior to performing the first ALD cycle.

3. The substrate processing system of claim 1 , wherein during the first ALD cycle and the second ALD cycle, the controller is configured to:
expose the substrate to a first reactant;
evacuate reactants from the processing chamber after exposing the substrate to the first reactant;
expose the substrate to a second reactant that is different than the first reactant; and
evacuate reactants from the processing chamber after exposing the substrate to the second reactant.

4. The substrate processing system of claim 1 , wherein the film includes silicon dioxide.

5. The substrate processing system of claim 1 , wherein when exposing the substrate to the inhibitor plasma, the controller is configured to:
supply an inhibitor gas;
strike the inhibitor plasma prior to performing the first ALD cycle;
maintain the inhibitor plasma in the processing chamber while performing the second ALD cycle; and
after the film is deposited on the substrate during the second ALD cycle, turn the inhibitor plasma off.

6. The substrate processing system of claim 1 , wherein the inhibitor plasma inhibits subsequent film deposition in an increasing manner in the feature as a depth of the feature decreases.

7. The substrate processing system of claim 1 , wherein the inhibitor plasma is created using molecular nitrogen as the inhibiting gas.

8. The substrate processing system of claim 1 , wherein the controller is further configured to expose the substrate to the inhibitor plasma and perform additional ALD cycles after the second ALD cycle to bottom-up fill the feature without a seam.

9. The substrate processing system of claim 1 , wherein the inhibitor gas is selected from a group consisting of molecular hydrogen, helium, argon, ammonia or combinations thereof.

10. The substrate processing system of claim 1 , wherein the feature has an aspect ratio that is greater than 4:1 and an opening that is less than or equal to 30 nanometers.

11. The substrate processing system of claim 1 , wherein the inhibitor plasma is generated using a first plasma source and the first ALD cycle is performed using the first plasma source.

12. The substrate processing system of claim 1 , wherein the inhibitor plasma is generated using a first plasma source and the first ALD cycle is performed using a second plasma source that is different than the first plasma source.

13. The substrate processing system of claim 1 , wherein the inhibitor plasma is generated using a first plasma source and the first ALD cycle and the second ALD cycle are performed without using plasma.

14. The substrate processing system of claim 1 , further comprising performing one or more ALD cycles prior to the first ALD cycle without using inhibitor plasma therebetween.

15. The substrate processing system of claim 1 , further comprising using a process that is different than the first ALD cycle and the second ALD cycle to fill at least part of the feature with a material after performing the first ALD cycle and the second ALD cycle.

16. The substrate processing system of claim 15 , wherein:
the first ALD cycle and the second ALD cycle deposit dielectric film; and
the material includes another dielectric film that is different than the dielectric film.

17. The substrate processing system of claim 15 , wherein the material includes metal.

18. The substrate processing system of claim 1 , wherein the feature includes a trench.

19. The substrate processing system of claim 1 , wherein the feature includes a hole.

Assignees

• Lam Res Corp

Inventors

• Tang Wei
• Van Schravendijk Bart
• Qian Jun
• Kang Hu
• Lavoie Adrien
• Padhi Deenesh
• Smith David C

Classifications

• H10P14/69215

  the material being a silicon oxide, e.g. SiO2 · CPC title

• H10P14/6514

  by exposure to a plasma · CPC title

• H10P14/6339

  deposition by cyclic CVD, e.g. ALD, ALE or pulsed CVD · CPC title

• H10P14/6336

  in the presence of a plasma [PECVD] · CPC title

• H10P14/412

  Deposition of metallic or metal-silicide materials · CPC title