Seamless hexagonal boron nitride atomic monolayer thin film and method of fabricating the same

Patent metadata

Field	Value
Publication number	US-9963346-B2
Application number	US-201615017753-A
Country	US
Kind code	B2
Filing date	Feb 8, 2016
Priority date	Feb 12, 2015
Publication date	May 8, 2018
Grant date	May 8, 2018

Abstract

A seamless hexagonal h-BN atomic monolayer thin film has a pseudo-single crystal structure including a plurality of h-BN grains that are seamlessly merged. Each of the h-BN grains has a dimension in a range from about 10 μm to about 1,000 μm. The seamless hexagonal boron nitride (h-BN) atomic monolayer thin film may be fabricated by a process including pre-annealing a metal thin film at a first temperature in a chamber while supplying hydrogen gas to the chamber; supplying nitrogen source gas and boron source gas to the chamber; and forming the seamless h-BN atomic monolayer thin film having a pseudo-single crystal atomic monolayer structure having a grain dimension in a range from about 10 μm to about 1,000 μm by annealing the pre-annealed metal thin film at a second temperature.

First claim

What is claimed is:

1. A method of fabricating a seamless hexagonal boron nitride (h-BN) atomic monolayer thin film, the method comprising:
pre-annealing a metal thin film at a first temperature in a chamber while supplying hydrogen gas to the chamber;
supplying nitrogen source gas and boron source gas to the chamber; and
forming the seamless h-BN atomic monolayer thin film having a pseudo-single crystal atomic monolayer structure having a grain dimension in a range from about 10 μm to about 1,000 μm by annealing the pre-annealed metal thin film at a second temperature,
wherein the forming the seamless h-BN atomic monolayer thin film further comprises:
forming a plurality of h-BN seeds formed in gaps in a range from about 10 μm to about 1,000 μm amongst one another from the supplying nitrogen source gas and boron source gas to the chamber;
growing a plurality of h-BN grains from the plurality of h-BN seeds; and
forming the seamless h-BN atomic monolayer thin film having the pseudo-single crystal structure by merging the plurality of h-BN grains, and supplying the hydrogen gas in an amount from 100 times to 200 times greater than amounts of the nitrogen source gas and the boron source gas.

2. The method of claim 1 , wherein the pre-annealing and the forming of the h-BN atomic monolayer thin film are consecutively performed in the chamber.

3. The method of claim 1 , wherein the first temperature and the second temperature are substantially the same.

4. The method of claim 1 , wherein the seamless h-BN atomic monolayer thin film has a dimension in a range from about 1 cm to about 30 cm.

5. The method of claim 1 , wherein the h-BN atomic monolayer thin film is line defect-free at a grain boundary between the plurality of h-BN grains.

6. The method of claim 1 , wherein the metal thin film comprises a plurality of metal thin film grains, each of the plurality of metal thin film grains having one of a plurality of crystalline direction planes, the h-BN grains on respective one of the plurality of metal thin film grains have same crystalline direction and each of the plurality of h-BN grains on a grain boundary of the metal thin film has the same crystalline direction as a crystalline direction of the h-BN grains on one of the metal thin film grains contacting the grain boundary of the metal thin film.

7. The method of claim 1 , further comprising polishing a first surface of the metal thin film before the pre-annealing the metal thin film.

8. The method of claim 7 , wherein the polishing comprises at least one of chemical polishing, physical polishing, chemical-mechanical polishing, and electrolyte polishing.

9. The method of claim 1 , wherein the nitrogen source gas comprises at least one of NH 3 and N 2 .

10. The method of claim 1 , wherein the boron source gas is at least one selected from the group consisting of BH 3 , BF 3 , BCl 3 , B 2 H 6 , (CH 3 CH 2 ) 3 B, and (CH 3 ) 3 B.

11. The method of claim 1 , wherein the nitrogen source gas and the boron source gas are supplied by at least one of ammonia borane and borazine.

12. The method of claim 1 , wherein the metal thin film comprises at least one of Ni, Co, Fe, Pt, Pd, Au, Al, Cr, Cu, Mg, Mn, Mo, Rh, Ta, Ti, W, U, V, or Zr.

Assignees

• Samsung Electronics Co Ltd
• Research & Business Found Sungkyunkwan Univ

Inventors

• Suh Hwansoo
• Song Youngjae
• Wu Qinke
• Lee Sungjoo
• Kim Minwoo
• Park Sangwoo

Classifications

• C01B21/064 Primary

  with boron · CPC title

• C23C16/0254

  Physical treatment to alter the texture of the surface, e.g. scratching or polishing · CPC title

• C23C16/0209

  by heating · CPC title

• C23C16/02

  Pretreatment of the material to be coated (C23C16/04 takes precedence) · CPC title

• C23C16/342 Primary

  Boron nitride · CPC title