Method of doping an organic semiconductor and doping composition

Patent metadata

Field	Value
Publication number	US-9960352-B2
Application number	US-201615219717-A
Country	US
Kind code	B2
Filing date	Jul 26, 2016
Priority date	Jul 31, 2015
Publication date	May 1, 2018
Grant date	May 1, 2018

Abstract

A method of forming a n-doped semiconductor layer wherein a film comprising an organic semiconductor and an n-dopant reagent is irradiated by light having a wavelength that is within an absorption range of the organic semiconductor, and wherein an absorption maximum wavelength of the n-dopant precursor is shorter than any peak wavelength of the light. The n-doped semiconductor layer may be an electron-injection layer of an organic light-emitting device.

First claim

The invention claimed is:

1. A composition comprising: (a) an organic semiconductor comprising a unit comprising one or more of a C═N group, a nitrile group, a C═O group and a C═S group and (b) an n-dopant reagent comprising a 2,3-dihydro-benzoimidazole group.

2. A composition according to claim 1 wherein the n-dopant reagent comprises a 2,3-dihydro-1H-benzoimidazole group.

3. A composition according to claim 1 wherein the n-dopant reagent is a compound of formula (I):

wherein:
each R 2 is independently a C 1-20 hydrocarbyl group;
R 3 is H or a C 1-20 hydrocarbyl group; and
each R 4 is independently a C 1-20 hydrocarbyl group.

4. A composition according to claim 1 wherein the organic semiconductor is a polymer.

5. A composition according claim 1 wherein the organic semiconductor comprises a benzothiadiazole group.

6. A composition according to claim 1 wherein the n-dopant reagent is (4-(1,3-dimethyl-2,3-dihydro-1H-benzoimidazol-2-yl)phenyl)dimethylamine.

7. A method of forming a n-doped semiconductor layer from a composition according to claim 1 , the method comprising the step of exciting the organic semiconductor.

8. A method according to claim 7 wherein the organic semiconductor is excited by thermal treatment or electromagnetic irradiation.

9. A method according to claim 7 wherein the n-dopant reagent is (4-(1,3-dimethyl-2,3-dihydro-1H-benzoimidazol-2-yl)phenyl)dimethylamine.

Assignees

• Cambridge Display Tech Ltd
• Sumitomo Chemical Co
• Sumitomo Chemical Corporation Ltd

Inventors

• Kugler Thomas
• Zuberi Sheena

Classifications

• H10P34/42

  with electromagnetic radiation, e.g. laser annealing (laser cutting H10P54/20) · CPC title

• H10P95/90

  Thermal treatments, e.g. annealing or sintering · CPC title

• H10P34/00

  Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices · CPC title

• H01L51/5092

  Electricity · mapped topic

• C08G73/00

  Macromolecular compounds obtained by reactions forming a linkage containing nitrogen with or without oxygen or carbon in the main chain of the macromolecule, not provided for in groups C08G12/00 - C08G71/00 {(polycarbodiimides prepared from isocyanates C08G18/025, C08G18/797)} · CPC title