Semiconductor device having adjacent IGBT and diode regions with a shifted boundary plane between a collector region and a cathode region

Patent metadata

Field	Value
Publication number	US-9960165-B2
Application number	US-201315027846-A
Country	US
Kind code	B2
Filing date	Nov 5, 2013
Priority date	Nov 5, 2013
Publication date	May 1, 2018
Grant date	May 1, 2018

Abstract

Provided is a technology for further reducing a loss in a semiconductor device including a semiconductor substrate in which an IGBT region and a diode region are provided. This semiconductor device includes a semiconductor substrate in which at least one IGBT region and at least one diode region are provided. The IGBT region and the diode region are adjacent to each other in a predetermined direction in a plan view of the semiconductor substrate. In the plan view of the semiconductor substrate, a first boundary plane where the collector region and the cathode region are adjacent is shifted from a second boundary plane where the IGBT region and the diode region are adjacent on the front surface side of the semiconductor substrate either in a direction from the cathode region toward the collector region or in a direction from the collector region toward the cathode region.

First claim

The invention claimed is:

1. A semiconductor device comprising a semiconductor substrate in which at least one IGBT region and at least one diode region are provided, wherein
the IGBT region comprises:
a first conductivity type emitter region disposed in an area exposed on a front surface of the semiconductor substrate;
a second conductivity type base region surrounding the emitter region and in contact with the emitter region;
a first conductivity type first drift region disposed on a back surface side of the semiconductor substrate with respect to the base region, and being separated from the emitter region by the base region;
a gate electrode disposed in a trench penetrating the base region to extend to the first drift region, and facing a part of the base region which separates the emitter region from the first drift region;
an insulating body disposed between the gate electrode and an inner wall of the trench; and
a second conductivity type collector region disposed in an area exposed on a back surface of the semiconductor substrate,
the diode region comprises:
a second conductivity type anode region disposed in an area exposed on the front surface of the semiconductor substrate;
a first conductivity type second drift region disposed on the back surface side of the semiconductor substrate with respect to the anode region; and
a first conductivity type cathode region disposed in an area exposed on the back surface of the semiconductor substrate;
the IGBT region and the diode region are adjacent to each other in a plan view of the semiconductor substrate,
the emitter region does not exist in the diode region,
in the plan view of the semiconductor substrate, an area of a structure on a front surface side of the IGBT region is larger than an area of a structure on a front surface side of the diode region, a first boundary plane where the collector region and the cathode region are adjacent is shifted from a second boundary plane where the IGBT region and the diode region are adjacent on the front surface side of the semiconductor substrate in a direction from the cathode region toward the collector region, and a third boundary plane at at an edge of the IGBT region opposite the second boundary plane on the front surface side of the semiconductor substrate in a direction from the fourth boundary plane toward the first boundary plane.

2. The semiconductor device according to claim 1 , wherein
the diode region includes a first diode region, a second diode region, and a third diode region, the first diode region, the second diode region, and the third diode region being separated from each other,
the IGBT region includes:
a first IGBT region provided between the first diode region and the second diode region; and
a second IGBT region provided between the second diode region and the third diode region,
the first diode region, the first IGBT region, the second diode region, the second IGBT region, and the third diode region are aligned in a first direction,
in the plan view of the semiconductor substrate, each of a width of a structure on a front surface side of the first IGBT region in the first direction and a width of a structure on a front surface side of the second IGBT region in the first direction is wider than a width of the structure on the front surface side of the second diode region in the first direction,
the first boundary plane is between the collector region of the first IGBT region and the cathode region of the one of the second diode region and the second boundary plane is between the first IGBT region and the second diode region on the front surface side of the semiconductor substrate,
the third boundary plane is between the collector region of the first IGBT region and the cathode region of the first diode region and the fourth boundary plane is between the first IGBT region and the first diode region on the front surface side of the semiconductor substrate, and
a fifth boundary plane between the collector region of the second IGBT region and the cathode region of the second diode region is shifted from a sixth boundary plane between the second IGBT region and the second diode region on the front surface side of the semiconductor substrate in a direction from the cathode region of the second diode region toward the collector region of the second IGBT region.

3. The semiconductor device according to claim 1 , wherein
in the plan view of the semiconductor substrate, the IGBT region and the diode region have rectangular shapes,
the IGBT region and the diode region are adjacent to each other in a predetermined direction,
the first boundary plane and the second boundary plane extend in a direction perpendicular to the predetermined direction,
a width of the structure on the front surface side of the IGBT region in the predetermined direction is wider than a width of the structure on the front surface side of the diode region in the predetermined direction, and the first boundary plane is shifted from the second boundary plane in the direction from the cathode region toward the collector region by a first predetermined width.

4. The semiconductor device according to claim 3 , wherein
a ratio of the width of the structure on the front surface side of the IGBT region to the width of the structure on the front surface side of the diode region in the predetermined direction is 3 to 1, the first boundary plane is shifted from the second boundary plane in the direction from the cathode region toward the collector region by a length of 3 to 30% of the width of the structure on the front surface side of the diode region.

Assignees

• Horiuchi Yuki
• Kameyama Satoru
• Toyota Motor Co Ltd

Inventors

• Horiuchi Yuki
• Kameyama Satoru

Classifications

• H10W72/926

  Multiple bond pads having different sizes · CPC title

• H01L29/7391

  Electricity · mapped topic

• H01L29/0839

  Electricity · mapped topic

• H01L27/105 Primary

  Electricity · mapped topic

• H01L29/0834

  Electricity · mapped topic