Reliable interconnect

Patent metadata

Field	Value
Publication number	US-9960130-B2
Application number	US-201514615436-A
Country	US
Kind code	B2
Filing date	Feb 6, 2015
Priority date	Feb 6, 2015
Publication date	May 1, 2018
Grant date	May 1, 2018

Abstract

Devices and methods for forming a device are disclosed. The device includes a contact region disposed over a last interconnect level of the device. The device includes a final passivation layer having at least an opening which at least partially exposes a top surface of the contact region and a buffer layer disposed at least over a first exposed portion of the top surface of the contact region. When an electrically conductive interconnection couples to the contact region, the buffer layer absorbs a portion of a force exerted to form an interconnection between the electrically conductive interconnection and the contact region.

First claim

What is claimed is:

1. A device comprising:
an underlying device layer having an underlying device layer top surface;
a contact region disposed on the underlying device layer top surface, wherein the contact region includes a contact pad having a contact pad top surface;
a final passivation layer disposed on the underlying device layer top surface and partially overlapping the contact pad, wherein the final passivation layer includes a final passivation layer opening which defines an exposed portion of the contact pad top surface;
a buffer layer disposed over the contact pad and in the final passivation layer opening, wherein the buffer layer is a single continuous non-metal layer comprising a resilient material, and the buffer layer is separate and distinct from the final passivation layer;
a diffusion barrier layer disposed over the buffer layer and in the final passivation layer opening, wherein the diffusion barrier layer covers a top surface of the buffer layer and extends over a portion of a passivation layer top surface surrounding the final passivation layer opening; and
a wire bond directly coupled to the diffusion barrier layer.

2. The device of claim 1 wherein the buffer layer is disposed completely within the final passivation layer opening without contacting the final passivation layer.

3. The device of claim 2 wherein:
the wire bond comprises a ball bond which is in direct contact with a top surface portion of the barrier layer disposed within the final passivation layer opening; and
wherein the ball bond overlaps the buffer layer without contacting the buffer layer.

4. The device of claim 2 wherein the buffer layer directly contacts the contact pad and partially covers the exposed portion of the contact pad top surface.

5. The device of claim 1 wherein a top surface of the buffer layer comprises a convex profile or a concave profile.

6. The device of claim 1 wherein the buffer layer is deformable when a force is exerted thereon.

7. The device of claim 1 wherein:
the buffer layer comprises B-stage material; and
the buffer layer comprises a non-planar top surface profile defined by the B-stage material.

8. The device of claim 1 comprising:
a conductive layer, wherein the conductive layer lines sidewalls of the final passivation layer opening and covers the exposed portion of the contact pad top surface.

9. The device of claim 8 wherein the buffer layer is disposed directly on the conductive layer and completely within the final passivation layer opening.

10. The device of claim 1 wherein:
the buffer layer completely covers the exposed portion of the contact pad top surface and lines sidewalls of the final passivation layer opening, wherein the buffer layer is a conformal buffer layer of which an upper surface of the buffer layer includes a profile which is conformal to the topography of the underlying layer.

11. The device of claim 1 wherein the resilient material of the buffer layer comprises graphene or carbon nanotube.

12. The device of claim 1 wherein the diffusion barrier layer does not contact the passivation layer.

13. A device comprising:
an underlying device layer having an underlying device layer top surface;
a contact region disposed on the underlying device layer top surface, wherein the contact region includes a contact pad having a contact pad top surface;
a final passivation layer disposed on the underlying device layer top surface and the contact pad, wherein the final passivation layer includes a final passivation layer opening which defines an exposed portion of the contact pad top surface;
a buffer layer disposed over the contact pad and completely within the final passivation layer opening, wherein the buffer layer is a single continuous non-metal layer which comprises a material different from the final passivation layer, and the buffer layer is separate and distinct from the final passivation layer;
a barrier layer disposed over the contact pad, wherein the barrier layer covers a top surface of the buffer layer and extends over a portion of a passivation layer top surface surrounding the final passivation layer opening; and
a wire bond directly coupled to the barrier layer, wherein a portion of the wire bond contacts a portion of the barrier layer overlapping the buffer layer.

14. The device of claim 13 comprising a conductive layer separating the diffusion barrier layer from the passivation layer top surface.

15. A method for forming a device comprising:
forming an underlying device layer having an underlying device layer top surface;
forming a contact pad within a contact region disposed on the underlying device layer top surface, wherein the contact pad includes a contact pad top surface;
forming a final passivation layer on the underlying device layer top surface and over the contact pad, wherein an opening is formed in the final passivation layer to expose a portion of the contact pad top surface;
performing a deposition process to form a buffer layer over the contact pad and in the final passivation layer opening, wherein the buffer layer is a non-metal layer comprising a resilient material, and the buffer layer is a separate and distinct layer from the final passivation layer;
forming a diffusion barrier layer, wherein the diffusion barrier layer covers a top surface of the buffer layer and extends over a portion of a passivation layer top surface surrounding the final passivation layer opening; and
forming a wire bond directly coupled to the diffusion barrier layer, wherein a portion of the wire bond contacts a portion of the diffusion barrier layer overlapping the buffer layer.

16. The method of claim 15 wherein the buffer layer is formed completely within the final passivation layer opening and partially overlaps the exposed portion of the contact pad top surface.

17. The method of claim 16 comprising:
forming a conductive layer over the final passivation layer opening prior to forming the buffer layer, wherein the conductive layer lines sidewalls of the final passivation layer opening and completely covers the exposed portion of the contact pad top surface.

18. The method of claim 17 wherein the buffer layer is formed directly on the conductive layer and covers a first portion of the conductive layer, wherein the diffusion barrier layer covers the buffer layer and a second portion of the conductive layer.

19. The method of claim 15 wherein the deposition process to form the buffer layer comprises depositing the non-metal layer over the final passivation layer, wherein the non-metal layer lines sidewalls of the final passivation layer opening and covers the exposed portion of the contact pad top surface, wherein
the non-metal layer is patterned to define the buffer layer.

20. The method of claim 15 wherein the diffusion barrier layer does not contact the passivation layer.

21. A method for forming a device comprising:
forming an underlying device layer having an underlying device layer top surface;
forming a contact pad within a contact region disposed on the underlying device layer top surface, wherein the contact pad includes a contact pad top surface;
forming a final passivation layer on the underlying device layer top surface and over the contact pad, wherein an opening is formed in the final passivation layer to expose a portion of the contact pad top surface;
performing a deposition process to form a buffer layer in the final passivation layer opening, wherein the buffer layer partially overl

Assignees

• United Test And Assembly Center Ltd
• Utac Headquarters Pte Ltd

Inventors

• Huang Rui
• Wo Chun Hong
• Dimaano Antonio Jr Bambalan

Classifications

• H10W90/754

  between a chip and a stacked insulating package substrate, interposer or RDL · CPC title

• H10W90/734

  between a chip and a stacked insulating package substrate, interposer or RDL · CPC title

• H10W74/137

  the encapsulations being directly on the semiconductor body (H10W74/134 takes precedence) · CPC title

• H10W72/07555

  changes in materials · CPC title

• H10W72/5528

  Intermetallic compounds · CPC title