Method for film formation, and pattern-forming method

Patent metadata

Field	Value
Publication number	US-9958781-B2
Application number	US-201615134508-A
Country	US
Kind code	B2
Filing date	Apr 21, 2016
Priority date	Apr 24, 2015
Publication date	May 1, 2018
Grant date	May 1, 2018

Abstract

A method comprises applying a composition on a substrate to form a coating film on the substrate. The coating film is heated in an atmosphere in which an oxygen concentration is less than 1% by volume and a temperature is higher than 450° C. and 800° C. or lower, to form a film on the substrate. The composition comprises a compound comprising an aromatic ring. The oxygen concentration in the atmosphere during the heating of the coating film is preferably no greater than 0.1% by volume. The temperature in the atmosphere during the heating of the coating film is preferably 500° C. or higher and 600° C. or lower.

First claim

The invention claimed is:

1. A pattern-forming method comprising:
applying a composition on an upper face side of a substrate to form a coating film on the upper face side of the substrate;
heating the coating film in an atmosphere in which an oxygen concentration is less than 1% by volume and a temperature is higher than 450° C. and 800° C. or lower, to form a resist underlayer film on the upper face side of the substrate,
forming a resist pattern on an upper face side of the resist underlayer film; and
forming a pattern by a plurality of times of etching operations using the resist pattern as a mask such that the substrate has a pattern,
wherein the composition comprises an aromatic ring-containing compound having a molecular weight of no less than 600 and no greater than 3,000,
the aromatic ring-containing compound comprises a partial structure represented by formula (5), a partial structure represented by formula (6), or both thereof:

wherein:
in the formula (5), R 101 to R 104 each independently represent a halogen atom, a hydroxy group, a nitro group or a monovalent organic group having 1 to 20 carbon atoms; a11 and a12 are each independently an integer of 0 to 9; b11 and b12 are each independently an integer of 0 to 4, wherein in a case in which R 101 to R 104 are each present in a plurality of number, the plurality of R 101 s are identical or different, the plurality of R 102 s are identical or different, the plurality of R 103 s are identical or different, and the plurality of R 104 s are identical or different; n11 and n12 are each independently an integer of 0 to 2; k11 and k12 are each independently an integer of 0 to 9, wherein the sum of a11 and k11 is no greater than 9, and the sum of a12 and k12 is no greater than 9; and * 11 denotes a binding site to another moiety, and
in the formula (6), X 1 and X 2 each independently represent a substituted or unsubstituted cyclic structure having 4 to 10 ring atoms together with a spiro carbon atom and carbon atoms of an adjacent aromatic ring; R 131 and R 132 each independently represent a halogen atom, a hydroxy group, a nitro group or a monovalent organic group; a1 and a2 are each independently an integer of 0 to 8, wherein in a case in which R 131 and R 132 are each present in a plurality of number, the plurality of R 131 s are identical or different, and the plurality of R 132 s are identical or different; n1 and n2 are each independently an integer of 0 to 2; k1 and k2 are each independently an integer of 0 to 8, wherein the sum of a1 and k1 is no greater than 8, and the sum of a2 and k2 is no greater than 8; and * 13 denotes a binding site to another moiety,
the aromatic ring-containing compound comprises an intermolecular bond-forming group which is a carbon-carbon triple bond-containing group.

2. The pattern-forming method according to claim 1 , wherein the oxygen concentration in the atmosphere during the heating of the coating film is no greater than 0.1% by volume.

3. The pattern-forming method according to claim 1 , wherein the temperature in the atmosphere during the heating of the coating film is 500° C. or higher and 600° C. or lower.

4. The pattern-forming method according to claim 1 , wherein the composition further comprises a solvent.

5. A pattern-forming method comprising:
applying a composition on an upper face side of a substrate to form a coating film on the upper face side of the substrate;
heating the coating film in an atmosphere in which an oxygen concentration is less than 1% by volume and a temperature is higher than 450° C. and 800° C. or lower, to form a resist underlayer film on the upper face side of the substrate,
forming a resist pattern on an upper face side of the resist underlayer film; and
forming a pattern by a plurality of times of etching operations using the resist pattern as a mask such that the substrate has a pattern,
wherein the composition comprises an aromatic ring-containing compound having a molecular weight of no less than 600 and no greater than 3,000,
the aromatic ring-containing compound comprises a partial structure represented by formula (5), a partial structure represented by formula (6), or both thereof:

wherein:
in the formula (5), R 101 to R 104 each independently represent a halogen atom, a hydroxy group, a nitro group or a monovalent organic group having 1 to 20 carbon atoms; a11 and a12 are each independently an integer of 0 to 9; b11 and b12 are each independently an integer of 0 to 4, wherein in a case in which R 101 to R 104 are each present in a plurality of number, the plurality of R 101 s are identical or different, the plurality of R 102 s are identical or different, the plurality of R 103 s are identical or different, and the plurality of R 104 s are identical or different; n11 and n12 are each independently an integer of 0 to 2; k11 and k12 are each independently an integer of 0 to 9, wherein the sum of a11 and k11 is no greater than 9, and the sum of a12 and k12 is no greater than 9; and * 11 denotes a binding site to another moiety, and
in the formula (6), X 1 and X 2 each independently represent a substituted or unsubstituted cyclic structure having 4 to 10 ring atoms together with a spiro carbon atom and carbon atoms of an adjacent aromatic ring; R 131 and R 132 each independently represent a halogen atom, a hydroxy group, a nitro group or a monovalent organic group; a1 and a2 are each independently an integer of 0 to 8, wherein in a case in which R 131 and R 132 are each present in a plurality of number, the plurality of R 131 s are identical or different, and the plurality of R 132 s are identical or different; n1 and n2 are each independently an integer of 0 to 2; k1 and k2 are each independently an integer of 0 to 8, wherein the sum of a1 and k1 is no greater than 8, and the sum of a2 and k2 is no greater than 8; and * 13 denotes a binding site to another moiety,
the aromatic ring-containing compound comprises an intermolecular bond-forming group which is at least one selected from the group consisting of a (meth)acryloyl group, a substituted or unsubstituted vinylphenyl group, a group represented by formula (7-1), a substituted or unsubstituted ethynyl group, a substituted or unsubstituted propargyl group, a group represented by formula (7-2), and a group represented by formula (7-3):

wherein:
in the above formula (7-1), R 105 , R 106 and R 107 each independently represent a hydrogen atom or a monovalent hydrocarbon group having 1 to 20 carbon atoms,
in the above formula (7-2), R 108 and R 109 each independently represent a hydrogen atom or a monovalent hydrocarbon group having 1 to 20 carbon atoms; q7 is 1 or 2, wherein in a case in which q7 is 2, a plurality of R 108 s are identical or different, and
in the above formula (7-3), R 110 represents a hydrogen atom or a monovalent hydrocarbon group having 1 to 20 carbon atoms.

6. The pattern-forming method according to claim 1 , the composition further comprises an acid generating agent.

7. The pattern-forming method according to claim 1 , the composition further comprises a crosslinking agent.

8. The pattern-forming method according to claim 5 , wherein the oxygen concentration in the atmosphere during the heating of the coating film is no greater than 0.1% by volume.

9. The pattern-forming method according to claim 5 , wherein the temperature in the atmosphere during the heating of

Assignees

• Jsr Corp

Inventors

• Matsumura Yuushi
• Wakamatsu Goji
• Nosaka Naoya
• Abe Tsubasa
• Takimoto Yoshio

Classifications

• H10P76/20

  of masks comprising organic materials · CPC title

• H01L21/0271

  Electricity · mapped topic

• G03F7/094

  Multilayer resist systems, e.g. planarising layers · CPC title

• C08G8/30

  by unsaturated compounds, e.g. terpenes · CPC title

• C09D161/14

  Modified phenol-aldehyde condensates · CPC title