Photoresist additive for outgassing reduction and out-of-band radiation absorption

Patent metadata

Field	Value
Publication number	US-9958779-B2
Application number	US-201514876879-A
Country	US
Kind code	B2
Filing date	Oct 7, 2015
Priority date	Feb 13, 2015
Publication date	May 1, 2018
Grant date	May 1, 2018

Abstract

A patternable layer is formed over a substrate. A photo-sensitive layer is formed over the patternable layer. The photo-sensitive layer contains an additive. The additive contains at least a floating control chemical and a volume control chemical. A spin drying or a baking process is performed to the photo-sensitive layer. The floating control chemical causes the additive to rise upward during the spin drying or baking process. Thereafter, as a part of an extreme ultraviolet (EUV) lithography process, the photo-sensitive layer is exposed. One or more outgassing chemicals are generated inside the photo-sensitive layer during the exposing. The volume control chemical is sufficiently voluminous and dense to trap the outgassing chemicals inside the photo-sensitive layer.

First claim

What is claimed is:

1. A method of fabricating a semiconductor device, comprising:
forming a layer over a substrate;
coating a photoresist over the layer, wherein the photoresist contains an additive and a solvent;
spin drying the photoresist, wherein the additive floats to an upper surface of the photoresist during the spin drying;
baking the photoresist after the spin drying, wherein the solvent evaporates out of the photoresist during the baking, thereby leaving the additive as a protective layer at or near the upper surface of the photoresist; and
performing, after the baking, an extreme ultraviolet (EUV) lithography exposure process to the photoresist, the exposure process producing one or more photoresist outgassing products, wherein the additive at the upper surface of the photoresist prevents the one or more photoresist outgassing products from escaping the photoresist; and
developing the photoresist after the performing of the exposure process.

2. The method of claim 1 , wherein the additive comprises a floating control unit and a volume control unit, and wherein:
the floating control units causes the additive to float toward the upper surface of the photoresist during the spin drying or the baking of the photoresist; and
the volume control unit blocks the one or more photoresist outgassing products during the exposure process.

3. The method of claim 2 , wherein:
the floating control unit comprises fluorine or C1-C9 fluorine-containing alkyl group; and
the volume control unit comprises C5-C20 alkyl group, cycloalkyl group, hydroxylalkyl group, alkoxy group, alkoxyl alkyl group, acetyl group, acetylalkyl group, carboxyl group, alky carboxyl group, cycloalkyl carboxyl group, C5-C20 saturated or unsaturated hydrocarbon ring, or C5-C20 heterocyclic group.

4. The method of claim 2 , wherein the additive further comprises a radiation-absorption control unit, and wherein the radiation-absorption control unit absorbs radiation having a wavelength in a range from about 180 nanometers to about 250 nanometers during the exposure process.

5. The method of claim 4 , wherein the radiation-absorption control unit comprises C5-C20 benzene, naphthalene, phenanthrene, or pentacenequinone derivatives.

6. The method of claim 1 , wherein the additive has a greater density than a rest of the photoresist.

7. The method of claim 1 , wherein the one or more photoresist outgassing products comprise a tertbutylbenzene outgassed by a photo acid generator (PAG) during acid generation or an isobutene outgassed by a polymer during a deprotection reaction.

8. A method of fabricating a semiconductor device, comprising:
forming a patternable layer over a substrate;
forming a photo-sensitive layer over the patternable layer, wherein the photo-sensitive layer contains an additive and a solvent, wherein the additive comprises at least a floating control chemical and a volume control chemical, the volume control chemical causing the additive to have a greater density than a rest of the photo-sensitive layer;
spin drying the photo-sensitive layer, wherein the floating control chemical allows the additive to rise upward during the spin drying;
baking the photo-sensitive layer after the spin drying, wherein the solvent evaporates out of the photo-sensitive layer during the baking, thereby leaving the additive as a protective layer at or near an upper surface of the photo-sensitive layer;
exposing, after the baking and as a part of an extreme ultraviolet (EUV) lithography process, the photo-sensitive layer, wherein one or more outgassing chemicals are generated inside the photo-sensitive layer during the exposing, and wherein the volume control chemical traps the outgassing chemicals inside the photo-sensitive layer during the exposing; and
developing the photo-sensitive layer after the exposing.

9. The method of claim 8 , wherein:
the floating control chemical comprises fluorine or C1-C9 fluorine-containing alkyl group; and
the volume control chemical comprises C5-C20 alkyl group, cycloalkyl group, hydroxylalkyl group, alkoxy group, alkoxyl alkyl group, acetyl group, acetylalkyl group, carboxyl group, alky carboxyl group, cycloalkyl carboxyl group, C5-C20 saturated or unsaturated hydrocarbon ring, or C5-C20 heterocyclic group.

10. The method of claim 8 , wherein the additive further comprises a radiation-absorption control chemical configured to absorb radiation having a wavelength in a range from about 180 nanometers to about 250 nanometers.

11. The method of claim 10 , wherein the radiation-absorption control chemical comprises C5-C20 benzene, naphthalene, phenanthrene, or pentacenequinone derivatives.

12. The method of claim 8 , wherein before the exposing, the additive forms a coating at a top surface of the photo-sensitive layer as a result of the floating control chemical allowing the additive to rise upward.

13. The method of claim 8 , wherein the additive has a greater density than the rest of the photo-sensitive layer and has a molecular weight in a range from about 1000 to about 25000.

14. A photoresist, comprising:
a solvent; and
an additive that includes a polymer:
wherein the polymer has one of the following chemical formulas:

15. The photoresist of claim 14 , wherein:
the polymer includes a volume control component that is denser than a rest of the photoresist such that the additive traps one or more photoresist outgassing products within the photoresist, the one or more photoresist outgassing products comprising chemicals that are released during an extreme ultraviolet (EUV) lithography exposure process.

16. The photoresist of claim 14 , wherein the polymer includes a radiation-absorption control component configured to absorb radiation having a wavelength in a range from about 180 nanometers to about 250 nanometers.

17. The photoresist of claim 16 , wherein the radiation-absorption control component comprises naphthalene, phenanthrene, or pentacenequinone derivatives.

18. The photoresist of claim 14 , wherein the additive has a molecular weight in a range from about 1000 to about 25000.

19. The photoresist of claim 15 , wherein less than about 50% of the additive is the volume control component.

20. The photoresist of claim 16 , wherein the polymer includes a floating control component that causes the additive to float toward an upper surface of a photoresist in which the additive is disposed wherein the floating control component comprises fluorine or a fluorine derivative in a concentration of 10 to 80% in the additive.

Assignees

• Taiwan Semiconductor Mfg Co Ltd

Inventors

• Lai Wei-Han
• Chang Ching-Yu
• Wang Chien-Wei

Classifications

• H10P76/2043

  using an anti-reflective coating · CPC title

• H10P76/2041

  Photolithographic processes · CPC title

• H10P76/40

  of masks comprising inorganic materials · CPC title

• H10P76/20 Primary

  of masks comprising organic materials · CPC title

• G03F7/11

  having cover layers or intermediate layers, e.g. subbing layers {(G03F7/091 - G03F7/093, B41N3/03 take precedence)} · CPC title