Micromechanical pressure sensor device and corresponding manufacturing method

Patent metadata

Field	Value
Publication number	US-9958348-B2
Application number	US-201415110261-A
Country	US
Kind code	B2
Filing date	Nov 17, 2014
Priority date	Jan 14, 2014
Publication date	May 1, 2018
Grant date	May 1, 2018

Abstract

A micromechanical pressure sensor device and a corresponding manufacturing method. The micromechanical pressure sensor device includes an ASIC wafer having a front side and a rear side, and a rewiring system, formed on the front side of the ASIC wafer, which includes a plurality of stacked strip conductor levels and insulation layers. The pressure sensor device also includes a MEMS wafer having a front side and a rear side, a first micromechanical functional layer which is formed above the front side of the MEMS wafer, and a second micromechanical functional layer which is formed above the first micromechanical functional layer.

First claim

What is claimed is:

1. A micromechanical pressure sensor device, comprising:
an ASIC wafer having a front side and a rear side;
a rewiring system, formed on the front side of the ASIC wafer, which includes a plurality of stacked strip conductor levels and insulation layers;
a MEMS wafer having a front side and a rear side;
a first micromechanical functional layer which is formed above the front side of the MEMS wafer;
a second micromechanical functional layer which is formed above the first micromechanical functional layer;
a diaphragm area which may be acted on by pressure through a via in the MEMS wafer being formed as a deflectable first pressure detection electrode in one of the first and second micromechanical functional layers; and
a stationary second pressure detection electrode formed in the other of the first and second micromechanical functional layers, at a distance and opposite from the diaphragm area;
wherein the second micromechanical functional layer is connected to the rewiring system by way of a bond connection in such a way that the stationary second pressure detection electrode is enclosed in a cavity, the rewiring system capping the cavity to enclose the stationary second pressure detection electrode;
wherein the diaphragm area is formed in the first micromechanical functional layer, and the stationary second pressure detection electrode is formed in the second micromechanical functional layer; and
wherein the stationary second pressure detection electrode has at least one anchoring area, which is anchored on the first micromechanical functional layer, the second micromechanical functional layer having a contact area separated from the anchoring area, which is anchored on the first micromechanical functional layer and has an electrical connection to an uppermost strip conductor level of the stacked strip conductor levels of the rewiring system by way of an area of the bond connection, and the anchoring area of the stationary second pressure detection electrode and the contact area of the second mechanical functional layer being electrically connected to each other by way of the first micromechanical functional layer.

2. The micromechanical pressure sensor device as recited in claim 1 , wherein a spring element is provided between the at least one anchoring area and the remaining portion of the stationary second pressure detection electrode.

3. The micromechanical pressure sensor device as recited in claim 1 , wherein a ring-shaped anchoring area is provided.

4. A micromechanical sensor device, comprising:
an ASIC wafer having a front side and a rear side;
a rewiring system, formed on the front side of the ASIC wafer, which includes a plurality of stacked strip conductor levels and insulation layers;
a MEMS wafer having a front side and a rear side;
a first micromechanical functional layer which is formed above the front side of the MEMS wafer;
a second micromechanical functional layer which is formed above the second micromechanical functional layer;
a diaphragm area which may be acted on by pressure through a via in the MEMS wafer, the diaphragm area being formed as a deflectable first pressure detection electrode in one of the first and second micromechanical functional layers; and
a stationary second pressure detection electrode formed in the other of the first and second micromechanical functional layer, at a distance and opposite from the diaphragm area;
wherein the second micromechanical functional layer is connected to the rewiring system by way of a bond connection in such a way that the diaphragm area is enclosed in a cavity, the rewiring system capping the cavity to enclose the diaphragm area;
wherein the diaphragm area is formed in the second micromechanical functional layer, and the stationary second pressure detection electrode is formed in the first micromechanical functional layer in a perforated manner;
wherein the diaphragm area is being anchored by way of an anchoring area on the first micromechanical functional layer with a ring-shaped closure;
wherein the second micromechanical functional layer has a contact area separated from the anchoring area, which is anchored on the first micromechanical functional layer and has an electrical connection to an uppermost strip conductor level of the stacked strip conductor levels of the rewiring system by way of an area of the bond connection, and the anchoring area of the diaphragm area and the contact area of the second mechanical functional layer being electrically connected to each other by way of the first micromechanical functional layer.

5. The micromechanical pressure sensor device as recited in claim 4 , wherein a stationary third pressure detection electrode is formed in the uppermost strip conductor level, at a distance and opposite from the diaphragm area.

6. The micromechanical pressure sensor device as recited in claim 1 , wherein a reference diaphragm area is formed in the first micromechanical functional layer, and a stationary reference electrode is formed in the second micromechanical functional layer, at a distance and opposite from the reference diaphragm area, and where the reference diaphragm area cannot be acted on by the pressure.

7. The micromechanical pressure sensor device as recited in claim 1 , wherein a further diaphragm area is formed in the first micromechanical functional layer, and a stationary reference electrode is formed in the second micromechanical functional layer, at a distance and opposite from the further diaphragm area, the further diaphragm area being designed as a deflectable moisture detection electrode which is covered with a moisture-sensitive layer which may be acted on by moisture through a further via in the MEMS wafer.

8. The micromechanical pressure sensor device as recited in claim 1 , wherein a further sensor device is formed in the second micromechanical functional layer, and the bond connection includes an area that is connected to the rewiring system in such a way that the further sensor device is enclosed in a further cavity which is hermetically separated from the cavity.

9. The micromechanical pressure sensor device as recited in claim 1 , wherein the diaphragm area may be acted on by counterpressure through a further via in the MEMS wafer which leads into the cavity.

10. A manufacturing method for a micromechanical pressure sensor device, comprising:
providing an ASIC wafer, having a front side and a rear side, and a rewiring system which is formed on the front side of the ASIC wafer and which includes a plurality of strip conductor levels and insulating layers situated in between;
providing a MEMS wafer, having a front side and a rear side, a first micromechanical functional layer which is formed above the front side of the MEMS wafer, and a second micromechanical functional layer which is formed above the first micromechanical functional layer, a diaphragm area which may be acted on by pressure through a via in the MEMS wafer being formed as a deflectable first pressure detection electrode in one of the first and second micromechanical functional layers, and a stationary second pressure detection electrode being formed in the other of the first and second micromechanical functional layers, at a distance and opposite from the diaphragm area; and
connecting the second micromechanical functional layer to the rewiring system by way of a bond connection in such a way that the stationary second pressure detection electrode is enclosed in a cavity, the rewiring system capping the cavity to enclose the stationary second pressure detection electrode;
wherein the diaphragm area is formed in the first micromechanical functional layer, and the stationary second pressure de

Assignees

• Bosch Gmbh Robert

Inventors

• Classen Johannes
• Reinmuth Jochen
• Kaelberer Arnd

Classifications

• B81B7/0048

  between the MEMS die and the substrate · CPC title

• B81B2201/0264

  Pressure sensors · CPC title

• B81B2201/0235

  Accelerometers · CPC title

• G01L19/0636

  using particle filters · CPC title

• G01L9/0073 Primary

  using a semiconductive diaphragm · CPC title