Evaporation method

Patent metadata

Field	Value
Publication number	US-9957607-B2
Application number	US-201715432426-A
Country	US
Kind code	B2
Filing date	Feb 14, 2017
Priority date	Oct 31, 2014
Publication date	May 1, 2018
Grant date	May 1, 2018

Abstract

An evaporation method in this disclosure is adapted for performing an evaporation process upon a surface of an evaporation target substrate. In an embodiment, an evaporation source plate is arranged to be heated by a heater so as to evaporate an evaporation material to its gaseous state, and then enable the gaseous evaporation material to travel passing through holes of a shutter device and thus spread toward the surface of the evaporation target substrate for depositing a film. Moreover, the evaporation method uses a transmission device for controlling the opening/closing of the holes, and there is a heating area formed at a position between the shutter device and the evaporation source plate for allowing the evaporation source plate, the plural holes, the heating area, the evaporation material and the heater to be arranged parallel to one another from the top to bottom.

First claim

What is claimed is:

1. A vapor deposition method, comprising:
coating an evaporation material on a coated surface of an evaporation source plate;
sealing said coated surface inside said evaporation source plate with a shutter device comprising an upper panel with a first plurality of holes and a lower panel with a second plurality of holes;
heating the evaporation source plate to vaporize the evaporation material while said shutter device is closed; and
displacing the shutter device open in a side-to-side manner to release said vaporized evaporation material directly onto a target substrate when a first pressure inside the evaporation source plate exceeds two orders of magnitude above a second pressure outside of the evaporation source plate, said step of displacing the shutter device open comprising displacing said upper panel with respect to said lower panel to align said first plurality of holes with said second plurality of holes, whereby said vaporized evaporation material flows through said first plurality of holes and said second plurality of holes directly on to the target substrate.

2. The vapor deposition method of claim 1 , wherein the heating step is performed with an infrared heater.

3. The vapor deposition method of claim 1 , wherein the shutter device comprises a shutter plate and a diffuser plate formed with a plurality of holes, and the step of displacing the shutter device open comprises displacing said shutter plate off of the plurality of holes, whereby said vaporized evaporation material flows through the plurality of holes directly on to the target substrate.

4. The vapor deposition method of claim 1 , wherein the heating step is performed with a radio frequency heater.

5. The vapor deposition method of claim 1 , wherein the heating step is performed with a microwave heater.

6. The vapor deposition method of claim 1 , wherein the step of displacing the shutter device open is performed with a motor turning a ball nut on a ball screw rod connected to said shutter device.

7. The vapor deposition method of claim 1 , wherein said displacing the shutter device open step releases said vaporized evaporation material directly from said coated surface to said target substrate.

Assignees

• Ind Tech Res Inst

Inventors

• Tung Fu-Ching
• Wang Ching-Chiun
• Lai Shih-Hsiang

Classifications

• C23C14/28 Primary

  by wave energy or particle radiation (C23C14/32 - C23C14/48 take precedence) · CPC title

• C23C14/24

  Vacuum evaporation · CPC title

• C23C14/542 Primary

  Controlling the film thickness or evaporation rate · CPC title