Adhesive composition for semiconductor and adhesive film including the same

Patent metadata

Field	Value
Publication number	US-9957425-B2
Application number	US-201414204128-A
Country	US
Kind code	B2
Filing date	Mar 11, 2014
Priority date	Dec 22, 2011
Publication date	May 1, 2018
Grant date	May 1, 2018

Abstract

An adhesive composition for semiconductors, an adhesive film, and a semiconductor device, wherein, in a curing process including a first stage at a temperature ranging from 120° C. to 130° C. for 1 to 20 minutes, a second stage at a temperature ranging from 140° C. to 150° C. for 1 to 10 minutes, a third stage at a temperature ranging from 160° C. to 180° C. for 30 seconds to 10 minutes, and a fourth stage at a temperature ranging from 160° C. to 180° C. for 10 minutes to 2 hours, the adhesive film has a DSC curing rate in the first stage that is 40% or less of a total curing rate, a DSC curing rate in the fourth stage that is 30% to 60% higher than a DSC curing rate in the third stage, and DSC curing rates in each of the second and third stages that are 5% or more higher than a DSC curing rate of a preceding stage thereof.

First claim

What is claimed is:

1. An adhesive film for semiconductors, the adhesive film consisting of, based on 100 parts by weight of the adhesive film in terms of solid content:
10 to 60 parts by weight of a thermoplastic resin;
15 to 40 parts by weight of an epoxy resin;
5 to 25 parts by weight of at least one curing resin, the at least one curing resin being a phenolic curing resin containing two or more phenolic hydroxyl groups per molecule or an aromatic amine curing resin, the aromatic amine curing resin including at least two amine groups and being represented one of Formulae 3 to 7, below, provided that the aromatic amine curing resin does not include a diaminodiphenyl methane, a diaminodiphenyl sulfone, a diaminodiphenyl ether, or 1,5-diaminonaphthalene;
0. 05 to 10 parts by weight of an imidazole curing accelerator represented by Formula 1 or 2, below; and
1 to 30 parts by weight of a filler,

wherein, in Formula 1, R 1 is hydrogen or a C 1 -C 12 alkyl group, R 2 is hydrogen or a C 1 -C 6 alkyl group, R 3 is a C 1 -C 6 alkyl group bonded to an unsubstituted or substituted aryl or unsubstituted or substituted heteroaryl group, the substituted aryl group or the substituted heteroaryl group being substituted by one to three substituents selected from —COOH and —NH 2 ,

wherein, in Formula 2, R is a C 1 -C 14 alkyl group or a phenyl group and n is an integer of 1 to 6,

wherein, in Formula 3, A is a single bond, —CH 2 —, —CH 2 CH 2 —, —SO 2 —, —NHCO—, —C(CH 3 ) 2 —, or —O—, R 1 to R 10 are each independently hydrogen, a C 1 -C 4 alkyl group, a C 1 -C 4 alkoxy group, or an amine group, at least two of R 1 to R 10 being amine groups,

wherein, in Formula 4, R 11 to R 18 are each independently an amine group, hydrogen, a C 1 to C 4 alkyl group, an alkoxy group, a hydroxyl group, a cyanide group, or a halogen, at least two of R 11 to R 18 being amine groups,

wherein, in Formula 5, Z 1 is hydrogen, a C1 to C4 alkyl group, an alkoxy group, or a hydroxyl group; R 19 to R 33 are each independently an amine group, hydrogen, a C 1 to C 4 alkyl group, an alkoxy group, a hydroxyl group, a cyanide group, or a halogen, at least two of R 19 to R 33 being amine groups,

wherein, in Formula 6, R 34 to R 41 are each independently an amine group, hydrogen, a C 1 to C 4 alkyl group, an alkoxy group, a hydroxyl group, a cyanide group, or a halogen, at least two of R 34 to R 41 being amine groups, and

wherein, in Formula 7, X 3 is —CH 2 —, —NH—, —SO 2 —, —S—, or —O—; and R 42 to R 49 are each independently an amine group, hydrogen, a C 1 to C 4 alkyl group, an alkoxy group, a hydroxyl group, a cyanide group, or a halogen, at least two of R 42 to R 49 being amine groups.

2. An adhesive film for semiconductors, wherein:
the adhesive film is the adhesive film as claimed in claim 1 , and
in a curing process including a first stage at a temperature ranging from 120° C. to 130° C. for 1 to 20 minutes, a second stage at a temperature ranging from 140° C. to 150° C. for 1 to 10 minutes, a third stage at a temperature ranging from 160° C. to 180° C. for 30 seconds to 10 minutes, and a fourth stage at a temperature ranging from 160° C. to 180° C. for 10 minutes to 2 hours, the adhesive film has a DSC curing rate in the first stage that is 40% or less of a total curing rate, a DSC curing rate in the fourth stage that is 30 to 60 percentage points higher than a DSC curing rate in the third stage, and DSC curing rates in each of the second and third stages that are 5 percentage points or more higher than a DSC curing rate of a preceding stage thereof.

3. The adhesive film as claimed in claim 2 , wherein:
the DSC curing rate in the second stage is 5 to 50 percentage points higher than the DSC curing rate in the first stage, and
the DSC curing rate in the third stage is 5 to 25 percentage points higher than the DSC curing rate in the second stage.

4. The adhesive film as claimed in claim 2 , wherein the imidazole curing accelerator is selected from the group of:

5. A semiconductor device connected using the adhesive film for semiconductors as claimed in claim 2 .

6. An adhesive film for semiconductors, the adhesive film being the adhesive film as claimed in claim 1 and having:
a void proportion of less than 10% after sequentially curing at 120° C. to 130° C. for 1 to 20 minutes and at 140° C. to 150° C. for 1 to 10 minutes, and
a void proportion of less than 20% after sequentially curing at 120° C. to 130° C. for 1 to 20 minutes, at 140° C. to 150° C. for 1 to 10 minutes and at 160° C. to 180° C. for 30 seconds to 10 minutes.

7. The adhesive film as claimed in claim 6 , wherein the adhesive film has a die shear strength of 1 kgf/chip or more after sequentially curing at 120° C. to 130° C. for 1 to 20 minutes and at 140° C. to 150° C. for 1to 10 minutes.

8. The adhesive film as claimed in claim 6 , wherein the adhesive film has a die shear strength of 10.0 kgf/chip or more after chip bonding at 120° C. for 1 second and followed by sequentially curing at 120° C. to 130° C. for 1 to 20 minutes, at 140° C. to 150° C. for 1 to 10 minutes, at 160° C. to 180° C. for 30 seconds to 10 minutes and at 160° C. to 180° C. for 10 minutes to 2 hours, and reflow three times at 260° C.

9. The adhesive film as claimed in claim 1 , wherein an amount of the thermoplastic resin is less than or equal to a sum of the amounts of the epoxy resin and the curing resin, in terms of solid content.

10. A semiconductor device connected using the adhesive film as claimed in claim 1 .

11. The semiconductor device as claimed in claim 10 , wherein the semiconductor device includes a substrate, an adhesive layer on the substrate, and a semiconductor chip on the adhesive layer such that the adhesive layer is between the semiconductor chip and the substrate.

12. The adhesive film as claimed in claim 1 , wherein the curing resin includes the phenolic curing resin containing two or more phenolic hydroxyl groups per molecule.

13. The adhesive film as claimed in claim 1 , wherein the imidazole curing accelerator is represented by Formula 1′ or 2′, below:

wherein, in Formula 2′, R is a C 1 -C 14 alkyl group or a phenyl group and n is an integer of 1 to 6.

14. The adhesive film as claimed in claim 1 , wherein the imidazole curing accelerator is:

15. The adhesive film as claimed in claim 1 , wherein the curing resin includes the aromatic amine curing resin including at least two amine groups, the aromatic amine curing resin including at least two amine groups being repre

Assignees

• Lee Jun Woo
• Kim Sung Min
• Kim In Hwan
• Park Baek Soung
• Lim Su Mi
• Choi Jae Won
• Cheil Ind Inc

Inventors

• Lee Jun Woo
• Kim Sung Min
• Kim In Hwan
• Park Baek Soung
• Lim Su Mi
• Choi Jae Won

Classifications

• H10W72/075

  of bond wires · CPC title

• H10W72/07331

  Connecting techniques · CPC title

• H10W72/073

  of die-attach connectors · CPC title

• H10W72/353

  not comprising solid metals or solid metalloids, e.g. ceramics · CPC title

• H10W72/354

  comprising polymers · CPC title