Method for forming metal nanowire or metal nanomesh

Patent metadata

Field	Value
Publication number	US-9957363-B2
Application number	US-201314420606-A
Country	US
Kind code	B2
Filing date	Sep 5, 2013
Priority date	Oct 19, 2012
Publication date	May 1, 2018
Grant date	May 1, 2018

Abstract

The present invention relates to a method for forming a metal nanowire or a metal nanomesh. More particularly, the present invention relates to a method for forming a metal nanowire or a metal nanomesh capable of forming a variety of metal nanowires or metal nanomeshes in a desired shape by a simplified method.
The method for forming a metal nanowire or a metal nanomesh includes the steps of forming a block copolymer thin film on a substrate, in which the block copolymer thin film includes specific hard segments and soft segments containing one or more polymer repeating units selected from the group consisting of a poly(meth)acrylate-based repeating unit, a polyalkylene oxide-based repeating unit, a polyvinylpyridine-based repeating unit, a polystyrene-based repeating unit, a polydiene-based repeating unit and a polylactone-based repeating unit; conducting orientation of the hard segments and soft segments in a lamellar or cylindrical form in the block copolymer thin film; selectively removing the soft segments; adsorbing a metal precursor onto the hard segments; and removing the hard segments.

First claim

The invention claimed is:

1. A method for forming a metal nanowire or a metal nanomesh, comprising the steps of:
forming a block copolymer thin film on a substrate, in which the block copolymer thin film includes hard segments containing a repeating unit of Chemical Formula 1 and soft segments containing a poly(meth)acrylate-based repeating unit of Chemical Formula 2;
conducting orientation of the hard segments and soft segments in a lamellar or cylindrical form in the block copolymer thin film;
adsorbing an oxide of a transition metal onto the block copolymer thin film, in which the oxide of a transition metal is selectively adsorbed onto the hard segments;
selectively removing the soft segments;
adsorbing a metal precursor onto the hard segments; and
removing the hard segments and forming the metal nanowire or the metal nanomesh, by treating the hard segments with oxygen plasma:

in Chemical Formula 1, n is an integer of 5 to 600, R is hydrogen or methyl, R′ is X,

X is —Z—R″, Y is alkylene having 1 to 10 carbon atoms, Z is arylene having 6 to 20 carbon atoms, R″ is a linear or branched hydrocarbon having 10 to 20 carbon atoms, or a linear or branched perfluorohydrocarbon having 10 to 20 carbon atoms,
in Chemical Formula 2, m is an integer of 30 to 1000, R 1 and R 2 are methyl,
wherein the step of adsorbing an oxide of a transition metal onto the block copolymer thin film, the block copolymer thin film is treated with a solution including 0.05 to 1.0 wt % of RuO 4 or OSO 4 ,
wherein the hard segment is a crystalline hard segment,
wherein the crystalline hard segment and the block copolymer including the same has a melting point (Tm) of 200 to 300° C., and the soft segment has a glass transition temperature (Tg) of 40 to 130° C., and
wherein the step of conducting orientation includes a step of conducting solvent annealing of the block copolymer thin film or conducting heat treatment at a temperature higher than the melting point of the hard segment and the glass transition temperature of the soft segment.

2. The method of claim 1 , wherein the block copolymer includes 10 to 90 wt % of the hard segment and 90 to 10 wt % of the soft segment.

3. The method of claim 1 , wherein a plurality of nanowires having a line width of 5 to 50 nm are formed at a spacing of 5 to 100 nm.

4. The method of claim 1 , wherein a plurality of nanomeshes having a diameter of 5 to 70 nm are formed at a spacing of 5 to 100 nm.

5. The method of claim 1 , wherein by the orientation step, the hard segments and soft segments are arranged in a lamellar or cylindrical form which is vertical to the substrate, and the cylindrical form is arranged in a square or hexagonal honeycomb shape in a top-down view of the substrate.

6. The method of claim 1 , wherein the step of selectively removing the soft segments includes a step of UV irradiation of the block copolymer thin film.

7. The method of claim 1 , wherein the metal precursor is used in the form of a neutral metal salt aqueous solution.

8. The method of claim 7 , wherein the neutral metal salt includes Na 2 PtCl 4 , Na 2 PdCl 4 , K 3 Fe(CN) 6 , K 3 Co(CN) 6 , KAg(CN) 2 , CuCl 2 .6H 2 O or HAuCl 4 .

9. The method of claim 1 , wherein the metal precursor is prepared from a cation of a metal selected from the group consisting of Pt, Pd, Co, Fe, Ni, Au, Ti, Cu, Ta, W and Ag.

Assignees

• Lg Chemical Ltd
• Iucf Hyu
• Iucf Hyu

Inventors

• Han Yang Kyoo
• Lee Je Gwon
• Lee Hyun Jin
• Kim No Ma
• Yoon Sung Soo
• Shin Eun Ji

Classifications

• H01B13/0026

  Apparatus for manufacturing conducting or semi-conducting layers, e.g. deposition of metal · CPC title

• C08J2333/26

  Homopolymers or copolymers of acrylamide or methacrylamide · CPC title

• H01B13/003

  using irradiation · CPC title

• H01B13/0016

  for heat treatment · CPC title

• C08J7/12 Primary

  Chemical modification · CPC title