Diblock copolymer, preparation method thereof, and method of forming nano pattern using the same

Patent metadata

Field	Value
Publication number	US-9493588-B2
Application number	US-201213992604-A
Country	US
Kind code	B2
Filing date	Mar 16, 2012
Priority date	Apr 22, 2011
Publication date	Nov 15, 2016
Grant date	Nov 15, 2016

Abstract

The present invention relates to a diblock copolymer that may facilitate formation of a finer nano pattern, and be used for manufacture of an electronic device including a nano pattern or a bio sensor, and the like, a method for preparing the same, and a method for forming a nano pattern using the same,
The diblock copolymer comprises a hard segment including at least one specific acrylamide-based repeat unit, and a soft segment including at least one (meth)acrylate-based repeat unit.

First claim

What is claimed is:

1. A method for forming a nano pattern comprising:
coating a solution of a diblock copolymer comprising a hard segment and a soft segment on a substrate to form a thin film;
solvent-annealing the coated thin film to form a polymer thin film on a substrate on which a film to be patterned is formed;
irradiating UV to the polymer thin film to remove soft segments; and
conducting reactive ion etching of a film to be patterned using the polymer thin film from which the soft segments are removed as a mask;
wherein the hard segment comprises at least one repeat unit of the following Chemical Formula 1, and the soft segment comprises at least one (meth)acrylate-based repeat unit of the following Chemical Formula 2, and
wherein the soft segments are regularly arranged in cylindrical forms on hard segments, and the cylindrical forms are regularly arranged in a square shape, by the solvent-annealing:

in the above Chemical Formula 1, n is an integer of from 5 to 600, R is hydrogen or a methyl group, R is X, X is —Z—R″, Z is a C6-20 arylene group, R″ is a C10-20 linear or branched hydrocarbon, and
in the above Chemical Formula 2, m is an integer of from 30 to 1000, R 1 is a methyl group, and R 2 is a methyl group.

2. The method for forming a nano pattern according to claim 1 , wherein the removal of the soft segments comprises irradiating UV to the polymer thin film to decompose the soft segments, and removing the soft segments by acid treatment.

3. The method for forming a nano pattern according to claim 1 , further comprising treating oxygen plasma to remove the polymer thin film, after the reactive ion etching.

Assignees

• Han Yang-Kyoo
• Lee Je-Gwon
• Kim Su-Hwa
• Lg Chemical Ltd

Inventors

• Han Yang-Kyoo
• Lee Je-Gwon
• Kim Su-Hwa

Classifications

• H10P50/242

  of Group IV materials · CPC title

• G03F7/0002 Primary

  Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping · CPC title

• C08F220/18

  with acrylic or methacrylic acids · CPC title

• C08F22/38 Primary

  Amides · CPC title

• B82Y10/00 Primary

  Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic · CPC title