Block copolymer and associated photoresist composition and method of forming an electronic device
US-2017037178-A1 · Feb 9, 2017 · US
US9957339B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9957339-B2 |
| Application number | US-201514820699-A |
| Country | US |
| Kind code | B2 |
| Filing date | Aug 7, 2015 |
| Priority date | Aug 7, 2015 |
| Publication date | May 1, 2018 |
| Grant date | May 1, 2018 |
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A copolymer is prepared by the polymerization of monomers that include an ultraviolet absorbing monomer, and a base-solubility-enhancing monomer. The copolymer is useful for forming a topcoat layer for electron beam and extreme ultraviolet lithographies. Also described are a layered article including the topcoat layer, and an associated method of forming an electronic device.
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The invention claimed is: 1. A copolymer, wherein the copolymer comprises the polymerization product of monomers comprising: an out-of-band absorbing monomer comprising an unsubstituted or substituted C 6 -C 18 aryl group that is free of fluorine, an unsubstituted or substituted C 2 -C 17 heteroaryl group, a C 5 -C 12 dienone group, or a combination thereof; and a base-solubility-enhancing monomer selected from the group consisting of (meth)acrylate esters of poly(ethylene oxide)s, (meth)acrylate esters of poly(propylene oxide)s, base-labile (meth)acrylate esters, (meth)acrylate esters substituted with a group having a pK a of 2 to 12, and combinations thereof; wherein the out-of-band absorbing monomer comprising an unsubstituted or substituted C 6 -C 18 aryl group that is free of fluorine has the structure wherein R 1 is hydrogen or methyl, n is 0, 1, 2, 3, or 4, and Ar 1 is an unsubstituted or substituted C 6 -C 18 aryl group that is free of fluorine; wherein a film cast from the copolymer has an extinction coefficient, k, of 0.1 to 0.5 at a wavelength in the range of 150 to 400 nanometers; and wherein the copolymer has a dispersity (M w /M n ) of 1.05 to 1.2. 2. The copolymer of claim 1 , wherein the base-solubility-enhancing monomer comprises a (meth)acrylate ester of a poly(ethylene oxide) and a (meth)acrylate ester substituted with a 1,1,1,3,3,3-hexafluoro-2-hydroxy-2-propyl group. 3. A method of forming a polymer layer, comprising spin-coating a polymer solution comprising 0.1 to 3 weight percent of the copolymer of claim 1 in a solvent selected from the group consisting of 2-methyl-2-butanol, 2-methyl-2-pentanol, combinations of 2-methyl-2-butanol and 2-methyl-2-pentanol, combinations of dipropylene glycol monomethyl ether and 2-methyl-2-butanol containing at least 90 weight percent 2-methyl-2-butanol, combinations of dipropylene glycol monomethyl ether and 2-methyl-2-pentanol containing at least 90 weight percent 2-methyl-2-pentanol, and combinations of dipropylene glycol monomethyl ether and 2-methyl-2-butanol and 2-methyl-2-pentanol containing at least 90 weight percent total of 2-methyl-2-butanol and 2-methyl-2-pentanol. 4. A layered article comprising: a substrate; a photoresist layer over the substrate; and a topcoat layer comprising the copolymer of claim 1 , over and in contact with the photoresist layer. 5. A method of forming an electronic device, comprising: (a) applying a photoresist layer onto a substrate; (b) applying a topcoat layer comprising the copolymer of claim 1 , onto the photoresist layer; (c) pattern-wise exposing the photoresist layer through the topcoat layer to activating radiation; and (d) developing the exposed photoresist layer to provide a resist relief image. 6. The method of claim 5 , wherein the activating radiation comprises electron beam or extreme ultraviolet radiation. 7. A copolymer, wherein the copolymer comprises the polymerization product of monomers comprising: an out-of-band absorbing monomer having the structure wherein R 1 is hydrogen or methyl, n is 0, 1, 2, 3, or 4, and Ar 1 is an unsubstituted or substituted C 6 -C 18 aryl group that is free of fluorine; and a base-solubility-enhancing monomer comprising a (meth)acrylate ester of a poly(ethylene oxide) and a (meth)acrylate ester substituted with a 1,1,1,3,3,3-hexafluoro-2-hydroxy-2-propyl group; wherein the monomers comprise, based on the total moles of monomer, 30 to 50 mole percent of the out-of-band absorbing monomer, 30 to 50 mole percent of the (meth)acrylate ester of a poly(ethylene oxide), and 10 to 30 mole percent of the (meth)acrylate ester substituted with a 1,1,1,3,3,3-hexafluoro-2-hydroxy-2-propyl group; wherein the copolymer has a dispersity (M w /M n ) of 1.05 to 1.2; and wherein a film cast from the copolymer has an extinction coefficient, k, of 0.1 to 0.5 at a wavelength in the range of 150 to 400 nanometers. 8. A copolymer, wherein the copolymer comprises the polymerization product of monomers comprising: an out-of-band absorbing monomer comprising an unsubstituted or substituted C 6 -C 18 aryl group that is free of fluorine, an unsubstituted or substituted C 2 -C 17 heteroaryl group, a C 5 -C 12 dienone group, or a combination thereof; and a base-solubility-enhancing monomer selected from the group consisting of (meth)acrylate esters of poly(ethylene oxide)s, (meth)acrylate esters of poly(propylene oxide)s, base-labile (meth)acrylate esters, (meth)acrylate esters substituted with a group having a pK a of 2 to 12, and combinations thereof; wherein the base-solubility-enhancing monomer comprises a (meth)acrylate ester of a poly(ethylene oxide) and a (meth)acrylate ester substituted with a 1,1,1,3,3,3-hexafluoro-2-hydroxy-2-propyl group; wherein a film cast from the copolymer has an extinction coefficient, k, of 0.1 to 0.5 at a wavelength in the range of 150 to 400 nanometers; and wherein the copolymer has a dispersity (M w /M n ) of 1.05 to 1.2.
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